Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 120A D2PAK7
|
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Estoque478.872 |
|
MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Infineon Technologies |
MOSFET N-CH 560V 4.5A TO220FP
|
pacote: TO-220-3 Full Pack |
Estoque3.648 |
|
MOSFET (Metal Oxide) | 560V | 4.5A (Tc) | 10V | 3.9V @ 200µA | 22nC @ 10V | 470pF @ 25V | ±20V | - | 31W (Tc) | 950 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 30V 23A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.784 |
|
MOSFET (Metal Oxide) | 30V | 23A (Tc) | 4V, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | ±16V | - | 45W (Tc) | 45 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 30V 7.3A 8-TSSOP
|
pacote: 8-TSSOP (0.173", 4.40mm Width) |
Estoque36.000 |
|
MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 60nC @ 5V | - | ±20V | - | 1.05W (Ta) | 12 mOhm @ 8.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
IXYS |
MOSFET N-CH 55V 182A TO-3P
|
pacote: TO-3P-3, SC-65-3 |
Estoque6.512 |
|
MOSFET (Metal Oxide) | 55V | 182A (Tc) | 10V | 4V @ 250µA | 114nC @ 10V | 4850pF @ 25V | ±20V | - | 360W (Tc) | 5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
NXP |
MOSFET N-CH 55V 11A TO220AB
|
pacote: TO-220-3 |
Estoque2.976 |
|
MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 4V @ 1mA | 5.5nC @ 10V | 322pF @ 25V | ±20V | - | 36W (Tc) | 150 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-262AA
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque3.408 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 205nC @ 20V | 3000pF @ 25V | ±20V | - | 270W (Tc) | 9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262AA | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET P-CH 100V 12A TO-220AB
|
pacote: TO-220-3 |
Estoque143.304 |
|
MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 860pF @ 25V | ±20V | - | 88W (Tc) | 300 mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 100A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque6.720 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.9V @ 100µA | 155nC @ 10V | 5171pF @ 25V | ±20V | - | 163W (Tc) | 1.98 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
IXYS |
MOSFET N-CH 600V 44A SOT-227B
|
pacote: SOT-227-4, miniBLOC |
Estoque5.760 |
|
MOSFET (Metal Oxide) | 600V | 44A | 10V | 4.5V @ 8mA | 330nC @ 10V | 8900pF @ 25V | ±20V | - | 600W (Tc) | 130 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 250V 76A TO-247
|
pacote: TO-247-3 |
Estoque390.000 |
|
MOSFET (Metal Oxide) | 250V | 76A (Tc) | 10V | 5V @ 1mA | 92nC @ 10V | 4500pF @ 25V | ±30V | - | 460W (Tc) | 39 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 85A TO220AB
|
pacote: TO-220-3 |
Estoque62.268 |
|
MOSFET (Metal Oxide) | 30V | 85A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 100nC @ 10V | 3535pF @ 15V | ±20V | - | 3.1W (Ta), 78.1W (Tc) | 3.6 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Rohm Semiconductor |
NCH 600V 24A POWER MOSFET
|
pacote: TO-3P-3 Full Pack |
Estoque7.128 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 5V @ 1mA | 45nC @ 10V | 2000pF @ 25V | ±20V | - | 74W (Tc) | 165 mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 30V 150A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque13.272 |
|
MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | ±20V | - | 140W (Tc) | 3.8 mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 200V 3.7A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque8.508 |
|
MOSFET (Metal Oxide) | 200V | 3.7A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 430pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 1.4 Ohm @ 1.85A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
ON Semiconductor |
MOSFET N-CH 30V 6.8A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque685.236 |
|
MOSFET (Metal Oxide) | 30V | 6.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 18.3nC @ 10V | 1060pF @ 25V | ±20V | - | 780mW (Ta) | 10 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 0.85A SOT23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque1.167.084 |
|
MOSFET (Metal Oxide) | 30V | 850mA (Ta) | 2.5V | 400mV @ 1mA (Min) | 2.1nC @ 4.5V | 83pF @ 24V | ±8V | - | 540mW (Ta) | 400 mOhm @ 500mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 20V 5A SOT23-3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque568.332 |
|
MOSFET (Metal Oxide) | 20V | 5A (Ta) | 1.5V, 4.5V | 850mV @ 250µA | 11nC @ 4.5V | 940pF @ 10V | ±8V | - | 1.5W (Ta) | 45 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
||
Goford Semiconductor |
MOSFET P-CH 40V 222A TO-220
|
pacote: - |
Estoque27 |
|
MOSFET (Metal Oxide) | 40 V | 222A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 206 nC @ 10 V | 15087 pF @ 20 V | ±20V | - | 312W (Tc) | 3.7mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 950V 13.3A TO263-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 950 V | 13.3A (Tc) | 10V | 3.5V @ 360µA | 43 nC @ 10 V | 1230 pF @ 400 V | ±20V | - | 104W (Tc) | 450mOhm @ 7.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Estoque15.000 |
|
MOSFET (Metal Oxide) | 40 V | 12A (Ta), 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 59 nC @ 10 V | 3300 pF @ 25 V | ±25V | - | 2.5W (Ta), 63W (Tc) | 9.8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
||
onsemi |
MOSFET N-CH 500V 5A TO220F
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 5V @ 250µA | 16.6 nC @ 10 V | 940 pF @ 25 V | ±30V | - | 31.3W (Tc) | 1.5Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
||
Diodes Incorporated |
MOSFET N-CH 30V 15A 8SO T&R 2
|
pacote: - |
Estoque13.926 |
|
MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 42 nC @ 10 V | 2000 pF @ 15 V | ±20V | - | 1.4W (Ta) | 5.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
MOSFET N-CH 80V 15A/74A 5DFN
|
pacote: - |
Estoque4.500 |
|
MOSFET (Metal Oxide) | 80 V | 15A (Ta), 74A (Tc) | 10V | 4V @ 95µA | 25 nC @ 10 V | 1640 pF @ 40 V | ±20V | - | 3.7W (Ta), 89W (Tc) | 6.7mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFNW (4.9x5.9) (8-SOFL-WF) | 8-PowerTDFN, 5 Leads |
||
Diotec Semiconductor |
IC
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 68A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 125 nC @ 10 V | 7560 pF @ 20 V | ±20V | - | 65W (Tc) | 7.3mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Renesas Electronics Corporation |
N-CHANNEL SWITCHING POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
650V, 7A, SINGLE N-CHANNEL POWER
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 4.5V @ 250µA | 24 nC @ 10 V | 1169 pF @ 50 V | ±30V | - | 44.6W (Tc) | 1.35Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 40V 54.8A/219A PPAK
|
pacote: - |
Estoque26.034 |
|
MOSFET (Metal Oxide) | 40 V | 54.8A (Ta), 219A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 150 nC @ 10 V | 7300 pF @ 20 V | +20V, -16V | - | 6.25W (Ta), 100W (Tc) | 1.04mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |