Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 20V 4.7A TSOP-6
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque2.608 |
|
MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 2.5V, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | 654pF @ 15V | ±12V | - | 2W (Ta) | 67 mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP6-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Global Power Technologies Group |
MOSFET N-CH 600V 16A TO220F
|
pacote: TO-220-3 Full Pack |
Estoque4.944 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 3039pF @ 25V | ±30V | - | 48W (Tc) | 470 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH
|
pacote: - |
Estoque4.432 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 20V 14A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque561.900 |
|
MOSFET (Metal Oxide) | 20V | 14A (Ta) | 2.5V, 4.5V | 600mV @ 250µA (Min) | 80nC @ 4.5V | - | ±12V | - | 1.6W (Ta) | 5 mOhm @ 21A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH 800V 7A ISOPLUS220
|
pacote: ISOPLUS220? |
Estoque3.376 |
|
MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 5.5V @ 2.5mA | 51nC @ 10V | 2800pF @ 25V | ±30V | - | 120W (Tc) | 930 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.536 |
|
MOSFET (Metal Oxide) | 60V | 27.5A (Ta) | 10V | 4V @ 250µA | 50nC @ 10V | 1680pF @ 25V | ±15V | - | 120W (Tj) | 82 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 150V 20A TO-220AB
|
pacote: TO-220-3 |
Estoque89.580 |
|
MOSFET (Metal Oxide) | 150V | 20A (Tc) | 10V | 4V @ 250µA | 55.9nC @ 10V | 1627pF @ 25V | ±20V | - | 112W (Tc) | 130 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 60V 1.1A TO92-3
|
pacote: E-Line-3 |
Estoque7.440 |
|
MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 5V, 10V | 3V @ 1mA | - | 350pF @ 25V | ±20V | - | 850mW (Ta) | 330 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
STMicroelectronics |
MOSFET N-CH 100V 22A TO-220
|
pacote: TO-220-3 |
Estoque4.448 |
|
MOSFET (Metal Oxide) | 100V | 22A (Tc) | 10V | 4V @ 250µA | 41nC @ 10V | 870pF @ 25V | ±20V | - | 85W (Tc) | 77 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 35A TO252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque61.452 |
|
MOSFET (Metal Oxide) | 100V | 35A (Tc) | 7V, 10V | 4.4V @ 250µA | 47nC @ 10V | 2000pF @ 12V | ±20V | - | 8.3W (Ta), 83W (Tc) | 26 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 4.5A 8ULTRASO
|
pacote: 3-PowerSMD, Flat Leads |
Estoque988.800 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta), 28A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 44nC @ 10V | 2000pF @ 50V | ±20V | - | 1.9W (Ta), 75W (Tc) | 37 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | UltraSO-8? | 3-PowerSMD, Flat Leads |
||
STMicroelectronics |
MOSFET N-CH 500V 22A I2PAK
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque2.000 |
|
MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 4V @ 250µA | 84nC @ 10V | 2565pF @ 25V | ±25V | - | 160W (Tc) | 140 mOhm @ 11A, 10V | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 100V 9.4A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque107.952 |
|
MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | - | 48W (Tc) | 210 mOhm @ 5.6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 40V 100A TO-220AB
|
pacote: TO-220-3 |
Estoque9.804 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4V @ 250µA | 93nC @ 10V | 2900pF @ 25V | ±20V | - | 170W (Tc) | 9 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 8A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque36.864 |
|
MOSFET (Metal Oxide) | 100V | 8A (Ta), 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 26nC @ 10V | 1540pF @ 50V | ±20V | - | 3.1W (Ta), 54W (Tc) | 22.5 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 11A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque146.184 |
|
MOSFET (Metal Oxide) | 55V | 11A (Tc) | 4.5V, 10V | 2V @ 1mA | 6nC @ 5V | 338pF @ 25V | ±15V | - | 36W (Tc) | 125 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 500V 60A TO-264
|
pacote: TO-264-3, TO-264AA |
Estoque19.344 |
|
MOSFET (Metal Oxide) | 500V | 60A (Tc) | 10V | 4.5V @ 250µA | 610nC @ 10V | 24000pF @ 25V | ±30V | - | 960W (Tc) | 100 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
||
Diodes Incorporated |
MOSFET N-CH 20V 4.2A SOT23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque34.260 |
|
MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 7nC @ 4.5V | 594.3pF @ 10V | ±8V | - | 800mW (Ta) | 38 mOhm @ 3.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 30V 10A PPAK SC70-6
|
pacote: - |
Estoque46.518 |
|
MOSFET (Metal Oxide) | 30 V | 10A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 33 nC @ 10 V | 1880 pF @ 10 V | ±20V | - | 13.6W (Tc) | 20mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CHANNEL 30V 83A 8DFN
|
pacote: - |
Estoque14.208 |
|
MOSFET (Metal Oxide) | 30 V | 83A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 35 nC @ 10 V | 1330 pF @ 15 V | ±20V | - | 36W (Tc) | 3.3mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 2.7A (Tc) | 10V | 4V @ 250µA | 9.3 nC @ 10 V | 225 pF @ 25 V | ±30V | - | 2.5W (Ta), 26W (Tc) | 1.5Ohm @ 1.35A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH 25V 14A DPAK
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Nexperia USA Inc. |
MOS DISCRETES
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 240mA | 5V, 10V | - | 0.21 nC @ 10 V | - | 20V | - | 320mW | - | 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
EPC |
TRANS GAN 100V DIE 5.6MOHM
|
pacote: - |
Estoque177.651 |
|
GaNFET (Gallium Nitride) | 100 V | 29A (Ta) | 5V | 2.5V @ 4mA | 7.4 nC @ 5 V | 851 pF @ 50 V | +6V, -4V | - | - | 6mOhm @ 16A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Wolfspeed, Inc. |
SICFET N-CH 1200V 17A TO247-3
|
pacote: - |
Estoque6.525 |
|
SiCFET (Silicon Carbide) | 1200 V | 17A (Tc) | 15V | 3.6V @ 2.33mA | 38 nC @ 15 V | 632 pF @ 1000 V | +15V, -4V | - | 97W (Tc) | 208mOhm @ 8.5A, 15V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 31A/205A 8TSON
|
pacote: - |
Estoque37.602 |
|
MOSFET (Metal Oxide) | 40 V | 31A (Ta), 205A (Tc) | - | 2V @ 51µA | 55 nC @ 10 V | 3900 pF @ 20 V | ±20V | - | 2.5W (Ta), 107W (Tc) | 1.35mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSON-8-4 | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 40V 110A 5DFN
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 35 nC @ 10 V | 2100 pF @ 20 V | ±20V | - | 68W (Tc) | 2.8mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |