Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 600V 4.5A TO-220
|
pacote: TO-220-3 |
Estoque4.432 |
|
MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 5.5V @ 200µA | 22.9nC @ 10V | 580pF @ 25V | ±20V | - | 50W (Tc) | 950 mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V SOT23
|
pacote: - |
Estoque64.428 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 50A TO-220-3
|
pacote: TO-220-3 |
Estoque17.532 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 10V | 4V @ 250µA | 21nC @ 10V | 1440pF @ 50V | ±20V | - | 91W (Tc) | 15 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 12A PPAK CHIPFET
|
pacote: PowerPAK? ChipFET? Single |
Estoque30.000 |
|
MOSFET (Metal Oxide) | 20V | 12A (Tc) | 2.5V, 4.5V | 2V @ 250µA | 55nC @ 10V | 1600pF @ 10V | ±12V | - | 3.1W (Ta), 31W (Tc) | 16 mOhm @ 7.6A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? ChipFet Single | PowerPAK? ChipFET? Single |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 80A TO-262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque3.424 |
|
MOSFET (Metal Oxide) | 40V | 23A (Ta), 80A (Tc) | 10V | 4V @ 250µA | 235nC @ 10V | 12200pF @ 25V | ±20V | - | 254W (Tc) | 2.9 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
IXYS |
MOSFET N-CH 800V 20A PLUS220SMD
|
pacote: PLUS-220SMD |
Estoque2.512 |
|
MOSFET (Metal Oxide) | 800V | 20A (Tc) | 10V | 5V @ 4mA | 86nC @ 10V | 4685pF @ 25V | ±30V | - | 500W (Tc) | 520 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 2.7A SSOT3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque6.912 |
|
MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4.5V, 10V | 3V @ 250µA | 7nC @ 5V | 650pF @ 15V | ±20V | - | 500mW (Ta) | 46 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 11A TO-220AB
|
pacote: TO-220-3 |
Estoque459.180 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | ±30V | - | 170W (Tc) | 520 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO220AB
|
pacote: TO-220-3 |
Estoque3.664 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 4V @ 250µA | 43nC @ 10V | 1420pF @ 25V | ±20V | - | 80W (Tc) | 13.9 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque5.200 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 118µA | 165nC @ 10V | 13000pF @ 30V | ±20V | - | 188W (Tc) | 3.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 250V 120A SOT-227
|
pacote: SOT-227-4, miniBLOC |
Estoque4.000 |
|
MOSFET (Metal Oxide) | 250V | 120A | 10V | 5V @ 4mA | 255nC @ 10V | 19000pF @ 25V | ±20V | - | 690W (Tc) | 17 mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
IXYS |
MOSFET N-CH 200V 75A D2PAK
|
pacote: - |
Estoque3.648 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 500V 21A TO-3P
|
pacote: TO-3P-3, SC-65-3 |
Estoque5.696 |
|
MOSFET (Metal Oxide) | 500V | 21A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 14A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque3.664 |
|
MOSFET (Metal Oxide) | 20V | 14A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 32nC @ 4.5V | - | ±20V | - | 1.6W (Ta) | 4.5 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET P-CH 45V 6A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque16.356 |
|
MOSFET (Metal Oxide) | 45V | 6A (Ta) | 4V, 10V | - | 32.2nC @ 5V | 2700pF @ 10V | ±20V | - | 2W (Ta) | 36 mOhm @ 6A, 10V | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 2.7A 3SSOT
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque750.192 |
|
MOSFET (Metal Oxide) | 100V | 2.7A (Ta) | 6V, 10V | 4V @ 250µA | 5nC @ 10V | 210pF @ 50V | ±20V | - | 1.5W (Ta) | 109 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 36V 20A 8SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque690.792 |
|
MOSFET (Metal Oxide) | 36V | 20A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 23nC @ 10V | 1470pF @ 18V | ±20V | - | 4.2W (Ta) | 6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 300A PSOF8
|
pacote: 8-PowerSFN |
Estoque2.160 |
|
MOSFET (Metal Oxide) | 80V | 300A (Tc) | 10V | 4V @ 250µA | 188nC @ 10V | 12800pF @ 25V | ±20V | - | 429W (Tj) | 1.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-PSOF | 8-PowerSFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 32A 8PQFN
|
pacote: 8-PowerTDFN |
Estoque4.144 |
|
MOSFET (Metal Oxide) | 25V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 68nC @ 10V | 4410pF @ 13V | ±20V | - | 3W (Ta), 66W (Tc) | 2 mOhm @ 27A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool ? 33 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET P-CH 20V 5.3A 8-SOP
|
pacote: 8-SMD, Gull Wing |
Estoque24.600 |
|
MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 4.5V, 10V | 3V @ 25µA | 38nC @ 10V | 1430pF @ 10V | ±20V | - | 2.5W (Ta) | 60 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SMD, Gull Wing |
||
Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220AB
|
pacote: TO-220-3 |
Estoque24.000 |
|
MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 5V @ 250µA | 130nC @ 10V | 2760pF @ 25V | ±30V | - | 220W (Tc) | 320 mOhm @ 9.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Micro Commercial Co |
Interface
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 5.6A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 12.7 nC @ 4.5 V | 1180 pF @ 10 V | ±10V | - | 1.3W | 42mOhm @ 5.6A, 4.5V | -55°C ~ 150°C | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
MOSFET N-CH 45V 2A TSMT6
|
pacote: - |
Estoque2.943 |
|
MOSFET (Metal Oxide) | 45 V | 2A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 2.3 nC @ 4.5 V | 150 pF @ 10 V | ±12V | - | 950mW (Ta) | 190mOhm @ 2A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
onsemi |
MOSFET N-CH 40V 24A/150A 8PQFN
|
pacote: - |
Estoque24.882 |
|
MOSFET (Metal Oxide) | 40 V | 24A (Ta), 150A (Tc) | 4.5V, 10V | 2V @ 120µA | 43.6 nC @ 10 V | 2745 pF @ 20 V | ±20V | - | 2.2W (Ta), 83W (Tc) | 2.1mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3) | 8-PowerWDFN |
||
Rohm Semiconductor |
NCH 60V 70A, TO-220AB, POWER MO
|
pacote: - |
Estoque2.769 |
|
MOSFET (Metal Oxide) | 60 V | 70A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 47 nC @ 10 V | 2950 pF @ 30 V | ±20V | - | 89W (Tc) | 4.6mOhm @ 70A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
TRENCH 40<-<100V
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 13A (Ta), 50A (Tc) | 10V | 3.5V @ 40µA | 31 nC @ 10 V | 2100 pF @ 40 V | ±20V | - | 2.8W (Ta), 42W (Tc) | 10.4mOhm @ 10A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2-6 | DirectFET™ Isometric MP |
||
Infineon Technologies |
MOSFET N-CH 700V 10A SOT223
|
pacote: - |
Estoque2.232 |
|
MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 3.5V @ 120µA | 13.1 nC @ 10 V | 424 pF @ 400 V | ±16V | - | 7.1W (Tc) | 450mOhm @ 2.3A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
onsemi |
SMALL SIGNAL N-CHANNEL MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |