Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor |
MOSFET P-CH 20V 2.2A SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque1.918.620 |
|
MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 10.3nC @ 4.5V | 940pF @ 10V | ±8V | - | 480mW (Ta) | 70 mOhm @ 2.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 23A TO220AB
|
pacote: TO-220-3 |
Estoque3.312 |
|
MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 4V @ 1mA | - | 1210pF @ 25V | ±20V | - | 99W (Tc) | 75 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 35A I-PAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque17.412 |
|
MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18nC @ 10V | 845pF @ 13V | ±20V | - | 39W (Tc) | 14 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 49A TO-3PF
|
pacote: SC-94 |
Estoque6.408 |
|
MOSFET (Metal Oxide) | 60V | 49A (Tc) | 10V | 4V @ 250µA | 65nC @ 10V | 2410pF @ 25V | ±25V | - | 86W (Tc) | 16 mOhm @ 24.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 400V 1.8A TO-220
|
pacote: TO-220-3 |
Estoque103.464 |
|
MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 5V @ 250µA | 5.5nC @ 10V | 150pF @ 25V | ±30V | - | 40W (Tc) | 5.8 Ohm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 4.5A TO-220
|
pacote: TO-220-3 |
Estoque124.464 |
|
MOSFET (Metal Oxide) | 200V | 4.5A (Tc) | 10V | 5V @ 250µA | 7.5nC @ 10V | 270pF @ 25V | ±30V | - | 52W (Tc) | 1.2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 90V 0.01A TO92-3
|
pacote: E-Line-3 |
Estoque6.160 |
|
MOSFET (Metal Oxide) | 90V | 10mA (Ta) | 10V | 2.4V @ 100µA | - | 6.5pF @ 25V | ±20V | - | 625mW (Ta) | 250 Ohm @ 5mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Diodes Incorporated |
MOSFET N-CH 240V 0.16A TO92-3
|
pacote: E-Line-3 |
Estoque2.416 |
|
MOSFET (Metal Oxide) | 240V | 160mA (Ta) | 10V | 3V @ 1mA | - | 85pF @ 25V | ±20V | - | - | 16 Ohm @ 250mA, 10V | - | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Microsemi Corporation |
MOSFET N-CH 1000V 7A TO-247
|
pacote: TO-247-3 |
Estoque5.344 |
|
MOSFET (Metal Oxide) | 1000V | 7A (Tc) | 10V | 5V @ 500µA | 58nC @ 10V | 1800pF @ 25V | ±30V | - | 290W (Tc) | 2 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 100V 76A TO-220
|
pacote: TO-220-3 |
Estoque12.252 |
|
MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 4500pF @ 25V | ±20V | - | 188W (Tc) | 13 mOhm @ 76A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
pacote: 8-PowerSMD, Flat Leads |
Estoque3.424 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta), 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 10V | 1150pF @ 15V | ±25V | - | 3.1W (Ta), 25W (Tc) | 7.5 mOhm @ 20A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerSMD, Flat Leads |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.472 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 4V @ 250µA | 243nC @ 10V | 11825pF @ 15V | ±20V | - | 254W (Tc) | 1.8 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 700V 12.8A IPAK
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque20.136 |
|
MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 3.5V @ 60µA | 6.8nC @ 10V | 211pF @ 400V | ±16V | - | 30.5W (Tc) | 900 mOhm @ 1.1A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251 | TO-251-3 Stub Leads, IPak |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V
|
pacote: 8-PowerWDFN |
Estoque6.144 |
|
MOSFET (Metal Oxide) | 30V | 12.5A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 1mA | 23nC @ 10V | 1385pF @ 15V | ±20V | - | 2.3W (Ta), 27W (Tc) | 9.3 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
Vishay Siliconix |
MOSFET P-CH 200V 11A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque27.600 |
|
MOSFET (Metal Oxide) | 200V | 11A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1200pF @ 25V | ±20V | - | 3W (Ta), 125W (Tc) | 500 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 30V 25A PPAK SO-8
|
pacote: PowerPAK? SO-8 |
Estoque110.892 |
|
MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 45nC @ 10V | 2070pF @ 15V | +20V, -16V | - | 4.5W (Ta), 31W (Tc) | 4.3 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Infineon Technologies |
MOSFET N-CH 20V 1.2A SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque5.922.408 |
|
MOSFET (Metal Oxide) | 20V | 1.2A (Ta) | 2.7V, 4.5V | 700mV @ 250µA | 3.9nC @ 4.5V | 110pF @ 15V | ±12V | - | 540mW (Ta) | 250 mOhm @ 930mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3?/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Taiwan Semiconductor Corporation |
600V, 18A, SINGLE N-CHANNEL POWE
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 4V @ 250µA | 31 nC @ 10 V | 1273 pF @ 100 V | ±30V | - | 150.6W (Tc) | 190mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
NCH 30V 80A POWER MOSFET: RS1E35
|
pacote: - |
Estoque7.200 |
|
MOSFET (Metal Oxide) | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 185 nC @ 10 V | 7900 pF @ 15 V | ±20V | - | 3W (Ta), 35W (Tc) | 1.7mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
Qorvo |
750V/23MO,SICFET,G4,TOLL
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
SIC MOS D2PAK-7L 22MOHM 1200V
|
pacote: - |
Estoque2.400 |
|
SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 18V | 4.4V @ 20mA | 148 nC @ 18 V | 3200 pF @ 800 V | - | - | 234W (Tc) | 30mOhm @ 40A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
onsemi |
MOSFET N-CH 60V 54A/470A 8HPSOF
|
pacote: - |
Estoque4.146 |
|
MOSFET (Metal Oxide) | 60 V | 54A (Ta), 470A (Tc) | 6V, 10V | 4V @ 661µA | 170 nC @ 10 V | 13730 pF @ 30 V | ±20V | - | 4.2W (Ta), 314W (Tc) | 0.75mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A 8SOP
|
pacote: - |
Estoque58.608 |
|
MOSFET (Metal Oxide) | 60 V | 70A (Ta) | - | 2.5V @ 500µA | 65 nC @ 10 V | 4180 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 3.2mOhm @ 35A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Micro Commercial Co |
Interface
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 35A | 4.5V, 10V | 2.5V @ 250µA | 46.7 nC @ 10 V | 1860 pF @ 20 V | ±20V | - | 40W | 8mOhm @ 20A, 10V | -55°C ~ 150°C | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
||
Renesas Electronics Corporation |
MOSFET N-CH 30V 40A 8WPAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 40A (Ta) | - | - | 15 nC @ 4.5 V | 2200 pF @ 10 V | - | - | 45W (Tc) | 4.5mOhm @ 20A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
||
Vishay Siliconix |
MOSFET N-CH 600V 28A PPAK 8 X 8
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 5V @ 250µA | 53 nC @ 10 V | 1850 pF @ 100 V | ±30V | - | 174W (Tc) | 100mOhm @ 13.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
||
Panjit International Inc. |
500V N-CHANNEL MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 8A (Ta) | 10V | 4V @ 250µA | 16.2 nC @ 10 V | 826 pF @ 25 V | ±30V | - | 130W (Tc) | 900mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
MOSFET N-CH 30V LFPAK8
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 50A (Ta), 315A (Tc) | 10V | 2.2V @ 200µA | 131.4 nC @ 10 V | 9550 pF @ 15 V | ±20V | - | 3.9W (Ta), 150W (Tc) | 0.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |