Vishay Siliconix Produtos

SIR406DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 40A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2083pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

pacote: PowerPAK? SO-8

SIE816DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 60A POLARPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 19.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 10-PolarPAK? (L)
• Package / Case: 10-PolarPAK? (L)

pacote: 10-PolarPAK? (L)

SI4682DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 16A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc)
• Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: 8-SOIC (0.154", 3.90mm Width)

SI1046R-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 0.606A SC75-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta)
• Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75A
• Package / Case: SC-75A

pacote: SC-75A

SI7703EDN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 4.3A 1212-8 PPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

pacote: PowerPAK? 1212-8

IRFBE30L

Vishay Siliconix

MOSFET N-CH 800V 4.1A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacote: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF820STRL

Vishay Siliconix

MOSFET N-CH 500V 2.5A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI4158DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 36.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 36.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5710pF @ 10V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 6W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: 8-SOIC (0.154", 3.90mm Width)

SIHG44N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 46A TO247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 278nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5892pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 417W (Tc)
• Rds On (Max) @ Id, Vgs: 73 mOhm @ 22A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

pacote: TO-247-3

SI7852ADP-T1-E3

Vishay Siliconix

MOSFET N-CH 80V 30A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

pacote: PowerPAK? SO-8

IRFR9020TRPBF

Vishay Siliconix

MOSFET P-CH 50V 9.9A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

SIR438DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 60A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

pacote: PowerPAK? SO-8

SI3983DV-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 2.1A 6-TSOP

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.1A
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 830mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

pacote: SOT-23-6 Thin, TSOT-23-6

SIZ904DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 12A POWERPAIR

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A, 16A
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
• Power - Max: 20W, 33W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-PowerPair?
• Supplier Device Package: 6-PowerPair?

pacote: 6-PowerPair?

SIA921EDJ-T4-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 7.8W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SC-70-6 Dual
• Supplier Device Package: PowerPAK? SC-70-6 Dual

pacote: PowerPAK? SC-70-6 Dual

SI4532ADY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
• Rds On (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.13W, 1.2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

DG412LDJ

Vishay Siliconix

IC SWITCH QUAD SPST LV 16-DIP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 17 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): ±3 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 19ns, 12ns
• -3db Bandwidth: 280MHz
• Charge Injection: 5pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -95dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-PDIP

pacote: 16-DIP (0.300", 7.62mm)

DG306AAK/883

Vishay Siliconix

IC SW ANLG CMOS 14CDIP

• Switch Circuit: DPST - NO
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 50 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 250ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 30pC
• Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -74dB @ 500kHz
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 14-CDIP (0.300", 7.62mm)
• Supplier Device Package: 14-CERDIP

pacote: 14-CDIP (0.300", 7.62mm)

DG4051EEN-T1-GE4

Vishay Siliconix

IC MUX SINGLE 8CHAN 16-MINIQFN

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 78 Ohm
• Channel-to-Channel Matching (ΔRon): 910 mOhm
• Voltage - Supply, Single (V+): 3 V ~ 16 V
• Voltage - Supply, Dual (V±): ±3 V ~ 8 V
• Switch Time (Ton, Toff) (Max): 75ns, 88ns
• -3db Bandwidth: 308MHz
• Charge Injection: 0.3pC
• Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -105dB @ 100kHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-WFQFN
• Supplier Device Package: 16-miniQFN (1.8x2.6)

pacote: 16-WFQFN

DG2535EDQ-T1-GE3

Vishay Siliconix

IC ANALOG SWITCH DUAL 10MSOP

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 2
• On-State Resistance (Max): 700 mOhm
• Channel-to-Channel Matching (ΔRon): 60 mOhm
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 78ns, 58ns
• -3db Bandwidth: 120MHz
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): -
• Current - Leakage (IS(off)) (Max): -
• Crosstalk: -90dB @ 100kHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: -
• Supplier Device Package: -

pacote: -

SIP32433BDN-T1E4

Vishay Siliconix

3.5 A, 78 M, 2.8 V TO 23 V PROGR

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.8V ~ 23V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 78mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Power Good, Slew Rate Controlled
• Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 10-VFDFN Exposed Pad
• Supplier Device Package: 10-DFN (3x3)

pacote: -

SI7434ADP-T1-RE3

Vishay Siliconix

MOSFET N-CH 250V 3.7A/12.3A PPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250 V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 12.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
• Rds On (Max) @ Id, Vgs: 150mOhm @ 3.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

pacote: -

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SIJA54ADP-T1-GE3

Vishay Siliconix

N-CHANNEL 40 V (D-S) MOSFET POWE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 35.4A (Ta), 126A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
• Vgs (Max): +20V, -16V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
• Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

pacote: -

SQJA72EP-T1_BE3

Vishay Siliconix

N-CHANNEL 100-V (D-S) 175C MOSFE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 55W (Tc)
• Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

pacote: -

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SQJ860EP-T1_BE3

Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 48W (Tc)
• Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8 Dual
• Package / Case: PowerPAK® SO-8 Dual

pacote: -

SIHB30N60ET5-GE3

Vishay Siliconix

N-CHANNEL 600V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

SIHA150N60E-GE3

Vishay Siliconix

E SERIES POWER MOSFET THIN-LEAD

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 179W (Tc)
• Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

pacote: -

SI4190DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 20A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

pacote: -

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