Página 7 - Toshiba Semiconductor and Storage Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
Fale conosco
SalesDept@heisener.com +86-755-83210559 ext. 816
Login/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrinho 0

Toshiba Semiconductor and Storage Produtos - Transistores - FET, MOSFET - Simples

Registros 1.075
Página  7/39
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SSM5H90ATU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 2.4A UFV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 1.5A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFV
  • Package / Case: 5-SMD, Flat Leads
pacote: -
Estoque2.805
MOSFET (Metal Oxide)
20 V
2.4A (Ta)
2.5V, 4V
1.2V @ 1mA
2.2 nC @ 4 V
200 pF @ 10 V
±10V
-
500mW (Ta)
65mOhm @ 1.5A, 4V
150°C
Surface Mount
UFV
5-SMD, Flat Leads
TK1R4F04PB-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 160A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 6V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque3.000
MOSFET (Metal Oxide)
40 V
160A (Ta)
6V, 10V
3V @ 500µA
103 nC @ 10 V
5500 pF @ 10 V
±20V
-
205W (Tc)
1.9mOhm @ 80A, 6V
175°C
Surface Mount
TO-220SM(W)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TK33S10N1Z-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque11.922
MOSFET (Metal Oxide)
100 V
33A (Ta)
10V
4V @ 500µA
28 nC @ 10 V
2050 pF @ 10 V
±20V
-
125W (Tc)
9.7mOhm @ 16.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM6K407TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 2A UF6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
pacote: -
Estoque8.931
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
2V @ 1mA
6 nC @ 10 V
150 pF @ 10 V
±20V
-
500mW (Ta)
300mOhm @ 1A, 10V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
TK040N65Z-S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 57A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.85mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: -
Estoque450
MOSFET (Metal Oxide)
650 V
57A (Ta)
10V
4V @ 2.85mA
105 nC @ 10 V
6250 pF @ 300 V
±30V
-
360W (Tc)
40mOhm @ 28.5A, 10V
150°C
Through Hole
TO-247
TO-247-3
SSM6J502NU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A 6UDFNB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacote: -
Estoque5.625
MOSFET (Metal Oxide)
20 V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
24.8 nC @ 4.5 V
1800 pF @ 10 V
±8V
-
1W (Ta)
23.1mOhm @ 4A, 4.5V
150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
TPCC8104-L1Q
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 20A 8TSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
20A (Ta)
4.5V, 10V
2V @ 500µA
58 nC @ 10 V
2260 pF @ 10 V
+20V, -25V
-
700mW (Ta), 27W (Tc)
8.8mOhm @ 10A, 10V
150°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TPH1R104PB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque23.532
MOSFET (Metal Oxide)
40 V
120A (Ta)
6V, 10V
3V @ 500µA
55 nC @ 10 V
4560 pF @ 10 V
±20V
-
960mW (Ta), 132W (Tc)
1.14mOhm @ 60A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK49N65W5-S1F
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 24.6A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
650 V
49.2A (Ta)
10V
4.5V @ 2.5mA
185 nC @ 10 V
6500 pF @ 300 V
±30V
-
400W (Tc)
57mOhm @ 24.6A, 10V
150°C
Through Hole
TO-247
TO-247-3
TJ40S04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 40A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque12.039
MOSFET (Metal Oxide)
40 V
40A (Ta)
6V, 10V
3V @ 1mA
83 nC @ 10 V
4140 pF @ 10 V
+10V, -20V
-
68W (Tc)
9.1mOhm @ 20A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM3J35AMFV-L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 250MA VESM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
pacote: -
Estoque125.316
MOSFET (Metal Oxide)
20 V
250mA (Ta)
1.2V, 4.5V
1V @ 100µA
-
42 pF @ 10 V
±10V
-
150mW (Ta)
1.4Ohm @ 150mA, 4.5V
150°C
Surface Mount
VESM
SOT-723
SSM6J422TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UF6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
pacote: -
Estoque15.048
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
+6V, -8V
-
1W (Ta)
42.7mOhm @ 3A, 4.5V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
TK5A60W5-S5VX
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 2.3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
600 V
4.5A (Ta)
10V
4.5V @ 230µA
11.5 nC @ 10 V
370 pF @ 300 V
±30V
-
30W (Tc)
950mOhm @ 2.3A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPH1R306P1-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 100A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque24.423
MOSFET (Metal Oxide)
60 V
100A (Tc)
4.5V, 10V
2.5V @ 1mA
91 nC @ 10 V
8100 pF @ 30 V
±20V
-
960mW (Ta), 170W (Tc)
1.28mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK090A65Z-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.27mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
650 V
30A (Ta)
10V
4V @ 1.27mA
47 nC @ 10 V
2780 pF @ 300 V
±30V
-
45W (Tc)
90mOhm @ 15A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK25S06N1L-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque4.332
MOSFET (Metal Oxide)
60 V
25A (Ta)
4.5V, 10V
2.5V @ 100µA
15 nC @ 10 V
855 pF @ 10 V
±20V
-
57W (Tc)
18.5mOhm @ 12.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK20E60W5-S1VX
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
600 V
20A (Ta)
10V
4.5V @ 1mA
55 nC @ 10 V
1800 pF @ 300 V
±30V
-
165W (Tc)
175mOhm @ 10A, 10V
150°C
Through Hole
TO-220
TO-220-3
SSM3J15FS-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 100MA SSM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSM
  • Package / Case: SC-75, SOT-416
pacote: -
Estoque9.285
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
1.7V @ 100µA
-
9.1 pF @ 3 V
±20V
-
100mW (Ta)
12Ohm @ 10mA, 4V
150°C
Surface Mount
SSM
SC-75, SOT-416
TK055U60Z1-RQ
Toshiba Semiconductor and Storage

600V DTMOS VI TOLL 55MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.69mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TOLL
  • Package / Case: 8-PowerSFN
pacote: -
Estoque10.701
MOSFET (Metal Oxide)
600 V
40A (Ta)
10V
4V @ 1.69mA
65 nC @ 10 V
3680 pF @ 300 V
±30V
-
270W (Tc)
55mOhm @ 15A, 10V
150°C
Surface Mount
TOLL
8-PowerSFN
TK12P50W-RQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque5.850
MOSFET (Metal Oxide)
500 V
11.5A (Ta)
10V
3.7V @ 600µA
25 nC @ 10 V
890 pF @ 300 V
±30V
-
100W (Tc)
340mOhm @ 5.8A, 10V
150°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH5R60APL-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR N-C

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque9.840
MOSFET (Metal Oxide)
100 V
60A (Tc)
4.5V, 10V
2.5V @ 500µA
52 nC @ 10 V
4300 pF @ 50 V
±20V
-
960mW (Ta), 132W (Tc)
5.6mOhm @ 30A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TW048Z65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247-4L 48

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 20A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
pacote: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
650 V
40A (Tc)
18V
5V @ 1.6mA
41 nC @ 18 V
1362 pF @ 400 V
+25V, -10V
-
132W (Tc)
69mOhm @ 20A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
SSM3J340R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 4A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacote: -
Estoque69.066
MOSFET (Metal Oxide)
30 V
4A (Ta)
4V, 10V
2.2V @ 250µA
6.2 nC @ 4.5 V
492 pF @ 10 V
+20V, -25V
-
1W (Ta)
45mOhm @ 4A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM6K818R-LF
Toshiba Semiconductor and Storage

N-CH MOSFET 30V, +/-20V, 15A ,0.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
pacote: -
Estoque17.220
MOSFET (Metal Oxide)
30 V
15A (Ta)
4.5V, 10V
2.1V @ 100µA
7.5 nC @ 4.5 V
1130 pF @ 15 V
±20V
-
1.5W (Ta)
12mOhm @ 4A, 4.5V
150°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
XPJR6604PB-LXHQ
Toshiba Semiconductor and Storage

40V; UMOS9; 0.66MOHM; S-TOGL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11380 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.66mOhm @ 100A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-TOGL™
  • Package / Case: 5-PowerSFN
pacote: -
Estoque8.571
MOSFET (Metal Oxide)
40 V
200A (Ta)
6V, 10V
3V @ 1mA
128 nC @ 10 V
11380 pF @ 10 V
±20V
-
375W (Tc)
0.66mOhm @ 100A, 10V
175°C
Surface Mount
S-TOGL™
5-PowerSFN
TPH2R306NH1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque46.617
MOSFET (Metal Oxide)
60 V
136A (Tc)
6.5V, 10V
4V @ 1mA
72 nC @ 10 V
6100 pF @ 30 V
±20V
-
800mW (Ta), 170W (Tc)
2.3mOhm @ 50A, 10V
150°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
SSM3J375F-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque68.580
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
270 pF @ 10 V
+6V, -8V
-
600mW (Ta)
150mOhm @ 1A, 4.5V
150°C
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
SSM3J143TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5.5A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead
pacote: -
Estoque15.090
MOSFET (Metal Oxide)
20 V
5.5A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
+6V, -8V
-
500mW (Ta)
29.8mOhm @ 3A, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Lead