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Toshiba Semiconductor and Storage Produtos - Transistores - FET, MOSFET - Simples

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Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TPH4R803PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 48A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 24A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque14.982
MOSFET (Metal Oxide)
30 V
48A (Tc)
4.5V, 10V
2.1V @ 200µA
22 nC @ 10 V
1975 pF @ 15 V
±20V
-
830mW (Ta), 69W (Tc)
4.8mOhm @ 24A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
XPH3R114MC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 100A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque26.406
MOSFET (Metal Oxide)
40 V
100A (Ta)
4.5V, 10V
2.1V @ 1mA
230 nC @ 10 V
9500 pF @ 10 V
+10V, -20V
-
960mW (Ta), 170W (Tc)
3.1mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
SSM3K7002KFU-LXH
Toshiba Semiconductor and Storage

SMOS LOW RON NCH IO: 0.4A VDSS:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
pacote: -
Estoque23.565
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
40 pF @ 10 V
±20V
-
150mW (Ta)
1.5Ohm @ 100mA, 10V
150°C
Surface Mount
USM
SC-70, SOT-323
SSM3J356R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -60V -2A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacote: -
Estoque16.254
MOSFET (Metal Oxide)
60 V
2A (Ta)
4V, 10V
2V @ 1mA
8.3 nC @ 10 V
330 pF @ 10 V
+10V, -20V
-
1W (Ta)
300mOhm @ 1A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TPCA8128-L1Q
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 34A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 10 V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
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MOSFET (Metal Oxide)
30 V
34A (Ta)
4.5V, 10V
2V @ 500µA
115 nC @ 10 V
4800 pF @ 10 V
+20V, -25V
-
1.6W (Ta), 45W (Tc)
4.8mOhm @ 17A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK3A90E-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6Ohm @ 1.3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque129
MOSFET (Metal Oxide)
900 V
2.5A (Ta)
10V
4V @ 250µA
15 nC @ 10 V
650 pF @ 25 V
±30V
-
35W (Tc)
4.6Ohm @ 1.3A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK750A60F-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 10A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque2.610
MOSFET (Metal Oxide)
600 V
10A (Ta)
10V
4V @ 1mA
30 nC @ 10 V
1130 pF @ 300 V
±30V
-
40W (Tc)
750mOhm @ 5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3K361TU-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET NCH 100V 3.5A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacote: -
Estoque22.416
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
430 pF @ 15 V
±20V
-
1W (Ta)
69mOhm @ 2A, 10V
175°C
Surface Mount
UFM
3-SMD, Flat Leads
TPH3R10AQM-LQ
Toshiba Semiconductor and Storage

100V U-MOS X-H SOP-ADVANCE(N) 3.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque15.069
MOSFET (Metal Oxide)
100 V
120A (Tc)
6V, 10V
3.5V @ 500µA
83 nC @ 10 V
7400 pF @ 50 V
±20V
-
210W (Tc)
3.1mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
TK110A65Z-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 24A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.02mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque126
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
4V @ 1.02mA
40 nC @ 10 V
2250 pF @ 300 V
±30V
-
45W (Tc)
110mOhm @ 12A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3K35MFV-L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 180MA VESM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.5 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 50mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
pacote: -
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MOSFET (Metal Oxide)
20 V
180mA (Ta)
1.2V, 4V
1V @ 1mA
-
9.5 pF @ 3 V
±10V
-
150mW (Ta)
3Ohm @ 50mA, 4V
150°C
Surface Mount
VESM
SOT-723
TW030N120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 30MO

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 13mA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 249W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: -
Estoque90
SiCFET (Silicon Carbide)
1200 V
60A (Tc)
18V
5V @ 13mA
82 nC @ 18 V
2925 pF @ 800 V
+25V, -10V
-
249W (Tc)
40mOhm @ 30A, 18V
175°C
Through Hole
TO-247
TO-247-3
TPN11006PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 26A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta), 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque30.066
MOSFET (Metal Oxide)
60 V
26A (Tc)
4.5V, 10V
2.5V @ 200µA
17 nC @ 10 V
1625 pF @ 30 V
±20V
-
610mW (Ta), 61W (Tc)
11.4mOhm @ 13A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
SSM3J112TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 1.1A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacote: -
Estoque2.244
MOSFET (Metal Oxide)
30 V
1.1A (Ta)
4V, 10V
1.8V @ 100µA
-
86 pF @ 15 V
±20V
-
800mW (Ta)
390mOhm @ 500mA, 10V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
XPQ1R004PB-LXHQ
Toshiba Semiconductor and Storage

40V U-MOS IX-H L-TOGL 1.0MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: L-TOGL™
  • Package / Case: 8-PowerBSFN
pacote: -
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MOSFET (Metal Oxide)
40 V
200A (Ta)
6V, 10V
3V @ 500µA
84 nC @ 10 V
6890 pF @ 10 V
±20V
-
230W (Tc)
1mOhm @ 100A, 10V
175°C
Surface Mount
L-TOGL™
8-PowerBSFN
SSM6K809R-LF
Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET N-CH VDSS=60

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
pacote: -
Estoque15.354
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3 nC @ 10 V
550 pF @ 10 V
±20V
-
1.5W (Ta)
36mOhm @ 5A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
TK40S06N1L-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque2.010
MOSFET (Metal Oxide)
60 V
40A (Ta)
4.5V, 10V
2.5V @ 200µA
26 nC @ 10 V
1650 pF @ 10 V
±20V
-
88.2W (Tc)
10.5mOhm @ 20A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM3J351R-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET PCH -60V -3.5A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 134mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacote: -
Estoque20.169
MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4V, 10V
2V @ 1mA
15.1 nC @ 10 V
660 pF @ 10 V
+10V, -20V
-
1W (Ta)
134mOhm @ 1A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM6G18NU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 1A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-µDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacote: -
Estoque11.775
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
270 pF @ 10 V
±8V
Schottky Diode (Isolated)
1W (Ta)
112mOhm @ 1A, 4.5V
150°C (TJ)
Surface Mount
6-µDFN (2x2)
6-WDFN Exposed Pad
TK2K2A60F-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
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MOSFET (Metal Oxide)
600 V
3.5A (Ta)
10V
4V @ 350µA
13 nC @ 10 V
450 pF @ 300 V
±30V
-
30W (Tc)
2.2Ohm @ 1.8A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3K357R-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 650MA SOT23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 12 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacote: -
Estoque156.039
MOSFET (Metal Oxide)
60 V
650mA (Ta)
3V, 5V
2V @ 1mA
1.5 nC @ 5 V
60 pF @ 12 V
±12V
-
1W (Ta)
1.8Ohm @ 150mA, 5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM6J412TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UF6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 42.7mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
pacote: -
Request a Quote
MOSFET (Metal Oxide)
20 V
4A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
±8V
-
1W (Ta)
42.7mOhm @ 3A, 4.5V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
TJ20S04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 20A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque29.727
MOSFET (Metal Oxide)
40 V
20A (Ta)
6V, 10V
3V @ 1mA
37 nC @ 10 V
1850 pF @ 10 V
+10V, -20V
-
41W (Tc)
22.2mOhm @ 10A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK16J60W5-S1VQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
pacote: -
Estoque63
MOSFET (Metal Oxide)
600 V
15.8A (Ta)
10V
4.5V @ 790µA
43 nC @ 10 V
1350 pF @ 300 V
±30V
-
130W (Tc)
230mOhm @ 7.9A, 10V
150°C
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
TK16V60W5-LVQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DTM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 790µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 245mOhm @ 7.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
pacote: -
Estoque7.500
MOSFET (Metal Oxide)
600 V
15.8A (Ta)
10V
4.5V @ 790µA
43 nC @ 10 V
1350 pF @ 300 V
±30V
-
139W (Tc)
245mOhm @ 7.9A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
TK155E65Z-S1X
Toshiba Semiconductor and Storage

650V DTMOS VI TO-220 155MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: -
Estoque132
MOSFET (Metal Oxide)
650 V
18A (Ta)
10V
4V @ 730µA
29 nC @ 10 V
1635 pF @ 300 V
±30V
-
150W (Tc)
155mOhm @ 9A, 10V
150°C
Through Hole
TO-220
TO-220-3
SSM3K2615TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacote: -
Estoque43.317
MOSFET (Metal Oxide)
60 V
2A (Ta)
3.3V, 10V
2V @ 1mA
6 nC @ 10 V
150 pF @ 10 V
±20V
-
800mW (Ta)
300mOhm @ 1A, 10V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
TJ90S04M3L-LQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque504
MOSFET (Metal Oxide)
40 V
90A (Ta)
4.5V, 10V
2V @ 1mA
172 nC @ 10 V
7700 pF @ 10 V
+10V, -20V
-
180W (Tc)
4.3mOhm @ 45A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63