Página 4 - Toshiba Semiconductor and Storage Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
Fale conosco
SalesDept@heisener.com 86-755-83210559-827
Login/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carrinho 0

Toshiba Semiconductor and Storage Produtos - Transistores - FET, MOSFET - Simples

Registros 1.075
Página  4/39
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SSM3K347R-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 38V 2A SOT23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 38 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 86 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 340mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
pacote: -
Estoque38.610
MOSFET (Metal Oxide)
38 V
2A (Ta)
4V, 10V
2.4V @ 1mA
2.5 nC @ 10 V
86 pF @ 10 V
±20V
-
2W (Ta)
340mOhm @ 1A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TK62Z60X-S1F
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(T)
  • Package / Case: TO-247-4
pacote: -
Estoque72
MOSFET (Metal Oxide)
600 V
61.8A (Ta)
10V
3.5V @ 3.1mA
135 nC @ 10 V
6500 pF @ 300 V
±30V
-
400W (Tc)
40mOhm @ 21A, 10V
150°C
Through Hole
TO-247-4L(T)
TO-247-4
SSM5H08TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 1.5A UFV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 750mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFV
  • Package / Case: 6-SMD (5 Leads), Flat Lead
pacote: -
Estoque6
MOSFET (Metal Oxide)
20 V
1.5A (Ta)
2.5V, 4V
1.1V @ 100µA
-
125 pF @ 10 V
±12V
Schottky Diode (Isolated)
500mW (Ta)
160mOhm @ 750mA, 4V
150°C
Surface Mount
UFV
6-SMD (5 Leads), Flat Lead
TPH4R008QM-LQ
Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR SOP8-ADV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 43A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque11.634
MOSFET (Metal Oxide)
80 V
86A (Tc)
6V, 10V
3.5V @ 600µA
57 nC @ 10 V
5300 pF @ 40 V
±20V
-
960mW (Ta), 170W (Tc)
4mOhm @ 43A, 10V
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
SSM3J35CT-L3F
Toshiba Semiconductor and Storage

MOSFET P-CHANNEL 20V 100MA CST3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12.2 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 50mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3
  • Package / Case: SC-101, SOT-883
pacote: -
Estoque18.624
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.2V, 4V
1V @ 1mA
-
12.2 pF @ 3 V
±10V
-
100mW (Ta)
8Ohm @ 50mA, 4V
150°C
Surface Mount
CST3
SC-101, SOT-883
XPJ1R004PB-LXHQ
Toshiba Semiconductor and Storage

40V; UMOS9; MOSFET 1MOHM; L-TOGL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 223W (Tc)
  • Rds On (Max) @ Id, Vgs: 1mOhm @ 80A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-TOGL™
  • Package / Case: 5-PowerSFN
pacote: -
Estoque8.925
MOSFET (Metal Oxide)
40 V
160A (Ta)
6V, 10V
3V @ 500µA
84 nC @ 10 V
6890 pF @ 10 V
±20V
-
223W (Tc)
1mOhm @ 80A, 10V
175°C
Surface Mount
S-TOGL™
5-PowerSFN
TK095N65Z5-S1F-S
Toshiba Semiconductor and Storage

650V DTMOS6-HIGH SPEED DIODE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.27mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 14.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
pacote: -
Request a Quote
MOSFET (Metal Oxide)
650 V
29A (Ta)
10V
4.5V @ 1.27mA
50 nC @ 10 V
2880 pF @ 300 V
±30V
-
230W (Tc)
95mOhm @ 14.5A, 10V
150°C
Through Hole
TO-247
TO-247-3
TK18A30D-S5X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 139mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque99
MOSFET (Metal Oxide)
300 V
18A (Ta)
10V
3.5V @ 1mA
60 nC @ 10 V
2600 pF @ 100 V
±20V
-
45W (Tc)
139mOhm @ 9A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK12A50E-S5X
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 12A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
500 V
12A (Ta)
10V
4V @ 1.2mA
40 nC @ 10 V
1300 pF @ 25 V
±30V
-
45W (Tc)
520mOhm @ 6A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
XPW4R10ANB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 70A AEC-Q101

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque47.964
MOSFET (Metal Oxide)
100 V
70A
6V, 10V
3.5V @ 1mA
75 nC @ 10 V
4970 pF @ 10 V
±20V
-
170W (Tc)
4.1mOhm @ 35A, 10V
-55°C ~ 175°C
Surface Mount
8-DSOP Advance
8-PowerVDFN
TPC8109-TE12L
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 10A 8-SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP (5.5x6.0)
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
10A (Ta)
-
2V @ 1mA
45 nC @ 10 V
2260 pF @ 10 V
-
-
-
20mOhm @ 5A, 10V
-
Surface Mount
8-SOP (5.5x6.0)
8-SOIC (0.173", 4.40mm Width)
TK6R7A10PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3455 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 28A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque153
MOSFET (Metal Oxide)
100 V
56A (Tc)
4.5V, 10V
2.5V @ 500µA
58 nC @ 10 V
3455 pF @ 50 V
±20V
-
42W (Tc)
6.7mOhm @ 28A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK100S04N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque8.094
MOSFET (Metal Oxide)
40 V
100A (Ta)
4.5V, 10V
2.5V @ 500µA
76 nC @ 10 V
5490 pF @ 10 V
±20V
-
180W (Tc)
2.3mOhm @ 50A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM6P16FE-TE85L-F
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 0.1A ES6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ES6
  • Package / Case: SOT-563, SOT-666
pacote: -
Request a Quote
MOSFET (Metal Oxide)
20 V
100mA (Ta)
-
-
-
11 pF @ 3 V
-
-
150mW (Ta)
8Ohm @ 10mA, 4V
150°C (TJ)
Surface Mount
ES6
SOT-563, SOT-666
TK22V65X5-LQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
pacote: -
Estoque7.500
MOSFET (Metal Oxide)
650 V
22A (Ta)
10V
4.5V @ 1.1mA
50 nC @ 10 V
2400 pF @ 300 V
±30V
-
180W (Tc)
170mOhm @ 11A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
SSM6K341NU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 6A 6UDFNB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacote: -
Estoque56.964
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3 nC @ 10 V
550 pF @ 10 V
±20V
-
2.5W (Ta)
36mOhm @ 4A, 10V
150°C
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
SSM3K7002KF-LXHF
Toshiba Semiconductor and Storage

SMOS NCH I: 0.4A, V: 60V, P: 270

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 270mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque51.804
MOSFET (Metal Oxide)
60 V
400mA (Ta)
4.5V, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
40 pF @ 10 V
±20V
-
270mW (Ta)
1.5Ohm @ 100mA, 10V
150°C
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
SSM6K208FE-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 1.9A ES6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: ES6
  • Package / Case: SOT-563, SOT-666
pacote: -
Estoque11.940
MOSFET (Metal Oxide)
30 V
1.9A (Ta)
1.8V, 4V
1V @ 1mA
1.9 nC @ 4 V
123 pF @ 15 V
±12V
-
500mW (Ta)
133mOhm @ 1A, 4V
150°C
Surface Mount
ES6
SOT-563, SOT-666
TJ60S04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6510 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 30A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque3.240
MOSFET (Metal Oxide)
40 V
60A (Ta)
6V, 10V
3V @ 1mA
125 nC @ 10 V
6510 pF @ 10 V
+10V, -20V
-
90W (Tc)
6.3mOhm @ 30A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK160F10N1L-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Request a Quote
MOSFET (Metal Oxide)
100 V
160A (Ta)
6V, 10V
3.5V @ 1mA
122 nC @ 10 V
10100 pF @ 10 V
±20V
-
375W (Tc)
2.4mOhm @ 80A, 10V
175°C
Surface Mount
TO-220SM(W)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TJ30S06M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 30A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 21.8mOhm @ 15A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque11.886
MOSFET (Metal Oxide)
60 V
30A (Ta)
6V, 10V
3V @ 1mA
80 nC @ 10 V
3950 pF @ 10 V
+10V, -20V
-
68W (Tc)
21.8mOhm @ 15A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM3K62TU-LXHF
Toshiba Semiconductor and Storage

SMOS LOW RON NCH VDSS:20V ID:0.8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 177 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 800mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead
pacote: -
Estoque26.475
MOSFET (Metal Oxide)
20 V
800mA (Ta)
1.2V, 4.5V
1V @ 1mA
2 nC @ 4.5 V
177 pF @ 10 V
±8V
-
500mW (Ta)
57mOhm @ 800mA, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Lead
TK170V65Z-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
pacote: -
Estoque14.850
MOSFET (Metal Oxide)
650 V
18A (Ta)
10V
4V @ 730µA
29 nC @ 10 V
1635 pF @ 300 V
±30V
-
150W (Tc)
170mOhm @ 9A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
SSM3H137TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 34V 2A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 34 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 1.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 119 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacote: -
Request a Quote
MOSFET (Metal Oxide)
34 V
2A (Ta)
4V, 10V
1.7V @ 1mA
3 nC @ 10 V
119 pF @ 10 V
±20V
-
800mW (Ta)
240mOhm @ 1A, 10V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
TPCC8093-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 21A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
20 V
21A (Ta)
2.5V, 4.5V
1.2V @ 500µA
16 nC @ 5 V
1860 pF @ 10 V
±12V
-
1.9W (Ta), 30W (Tc)
5.8mOhm @ 10.5A, 4.5V
150°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TPCA8052-H-T2L1-VM
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque42.255
MOSFET (Metal Oxide)
40 V
20A (Ta)
4.5V, 10V
2.3V @ 200µA
25 nC @ 10 V
2110 pF @ 10 V
±20V
-
1.6W (Ta), 30W (Tc)
11.3mOhm @ 10A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TPCC8136-LQ
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 9.4A 8TSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 18W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 9.4A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
20 V
9.4A (Ta)
1.8V, 4.5V
1.2V @ 1mA
36 nC @ 5 V
2350 pF @ 10 V
±12V
-
700mW (Ta), 18W (Tc)
16mOhm @ 9.4A, 4.5V
150°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
XPH4R10ANB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 70A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4970 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
pacote: -
Estoque102.927
MOSFET (Metal Oxide)
100 V
70A (Ta)
6V, 10V
3.5V @ 1mA
75 nC @ 10 V
4970 pF @ 10 V
±20V
-
960mW (Ta), 170W (Tc)
4.1mOhm @ 35A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN