Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET 100V 33A DIE
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 33A | 10V | - | - | - | - | - | - | 44mOhm @ 33A, 10V | - | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET P-CH 150V 2.2A SOT223
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 2.2A (Ta) | 10V | 5V @ 250µA | 49 nC @ 10 V | 1280 pF @ 25 V | ±20V | - | 2.5W (Ta) | 240mOhm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO247-3
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 3.5V @ 440µA | 29 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 96W (Tc) | 299mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 80V 37A/331A HSOF-8
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pacote: - |
Estoque6.627 |
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MOSFET (Metal Oxide) | 80 V | 37A (Ta), 331A (Tc) | 6V, 10V | 3.8V @ 280µA | 200 nC @ 10 V | 14000 pF @ 40 V | ±20V | - | 300W (Tc) | 1.4mOhm @ 150A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET P-CH 8-SOIC
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pacote: - |
Estoque67.197 |
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MOSFET (Metal Oxide) | 60 V | 3.44A (Ta) | 10V | 4V @ 1mA | 30 nC @ 10 V | 875 pF @ 25 V | ±20V | - | 2.5W (Ta) | 130mOhm @ 3.44A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8-6 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
SIC_DISCRETE
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pacote: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 22A (Tc) | 18V, 20V | 5.1V @ 2.2mA | 18 nC @ 20 V | 458 pF @ 800 V | +23V, -5V | - | 133W (Tc) | 150mOhm @ 7A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-14 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO263-3
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 3.9V @ 350µA | 27 nC @ 10 V | 790 pF @ 25 V | ±20V | - | 83W (Tc) | 600mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 4V @ 34µA | 48 nC @ 10 V | 3900 pF @ 30 V | ±20V | - | 71W (Tc) | 8.8mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
PLANAR 40<-<100V
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pacote: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 75A D2PAK
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pacote: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
SIC_DISCRETE
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pacote: - |
Estoque2.901 |
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SiCFET (Silicon Carbide) | 1200 V | 30A | - | - | - | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
TRENCH 40<-<100V
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pacote: - |
Estoque3.000 |
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MOSFET (Metal Oxide) | 80 V | 32A (Ta), 191A (Tc) | 6V, 10V | 3.8V @ 194µA | 186 nC @ 10 V | 8700 pF @ 40 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1.9mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
GAN HV
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pacote: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 400 V | 31A (Tc) | - | 1.6V @ 2.6mA | - | 382 pF @ 320 V | -10V | - | 125W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-3 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A D2PAK
|
pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | 3240 pF @ 100 V | ±20V | - | 277.8W (Tc) | 110mOhm @ 12.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO263-3
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pacote: - |
Estoque5.940 |
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MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | 3240 pF @ 100 V | ±20V | - | 277.8W (Tc) | 110mOhm @ 12.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
SIC_DISCRETE
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pacote: - |
Estoque1.575 |
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SiCFET (Silicon Carbide) | 1200 V | 187A | - | - | - | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 80V 200A 8HSOF
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pacote: - |
Estoque19.455 |
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MOSFET (Metal Oxide) | 80 V | 200A (Tc) | 6V, 10V | 3.8V @ 130µA | 110 nC @ 10 V | 7670 pF @ 40 V | ±20V | - | 200W (Tc) | 2.3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET P-CH 150V 700MA 8SO
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 150 V | 700mA (Ta) | 10V | 5V @ 250µA | 9 nC @ 10 V | 150 pF @ 25 V | ±20V | - | 2.5W (Ta) | 2.4Ohm @ 420mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
TRENCH >=100V
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 4.9V @ 100µA | 29 nC @ 10 V | 1200 pF @ 50 V | ±20V | - | 100W (Tc) | 100mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-904 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 60V TO252-3
|
pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 60 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TO252-3-313 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 26A D2PAK
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pacote: - |
Estoque8.850 |
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MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 4V @ 410µA | 36 nC @ 10 V | 1544 pF @ 400 V | ±20V | - | 95W (Tc) | 120mOhm @ 8.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 700V TDSON-8
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 700 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 64A 6VSON
|
pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 64A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 12 nC @ 10 V | 870 pF @ 20 V | ±20V | - | 2.1W (Ta), 39.1W (Tc) | 5.75mOhm @ 20A, 10V | -55°C ~ 155°C (TJ) | Surface Mount | PG-VSON-6-1 | 6-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH HI POWER WAFER
|
pacote: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 100A TDSON-8 FL
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pacote: - |
Estoque28.521 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 6V, 10V | 3.3V @ 120µA | 104 nC @ 10 V | 8125 pF @ 30 V | ±20V | - | 3W (Ta), 188W (Tc) | 1.45mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
TRENCH 40<-<100V PG-TO263-3
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pacote: - |
Estoque2.880 |
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MOSFET (Metal Oxide) | 80 V | 170A (Tc) | 6V, 10V | 3.8V @ 267µA | 255 nC @ 10 V | 12000 pF @ 40 V | ±20V | - | 300W (Tc) | 1.65mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
IPL65R1K5 - 650V AND 700V COOLMO
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pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
GANFET N-CH 600V 15A LSON-8
|
pacote: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 600 V | 15A (Tc) | - | 1.6V @ 2.6mA | - | 380 pF @ 400 V | -10V | - | 114W (Tc) | - | -55°C ~ 150°C (TJ) | Surface Mount | PG-LSON-8-1 | 8-LDFN Exposed Pad |