Página 17 - Infineon Technologies Produtos - Transistores - FET, MOSFET - Simples

SPA11N60C3IN

Infineon Technologies

MOSFET N-CH 650V 11A TO220-3-31

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

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MOSFET (Metal Oxide)

650 V

11A (Tc)

10V

3.9V @ 500µA

60 nC @ 10 V

1200 pF @ 25 V

±20V

-

33W (Tc)

380mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-31

TO-220-3 Full Pack

BSC0703LSATMA1

Infineon Technologies

MOSFET N-CH 60V 15A/64A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

pacote: -

Estoque5.220

MOSFET (Metal Oxide)

60 V

15A (Ta), 64A (Tc)

4.5V, 10V

2.3V @ 20µA

13 nC @ 4.5 V

1800 pF @ 30 V

±20V

-

2.5W (Ta), 46W (Tc)

6.5mOhm @ 32A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

BSO203SP

Infineon Technologies

P-CHANNEL POWER MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

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MOSFET (Metal Oxide)

20 V

7A (Ta)

2.5V, 4.5V

1.2V @ 50µA

39 nC @ 4.5 V

3750 pF @ 15 V

±12V

-

1.6W (Ta)

21mOhm @ 8.9A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8

8-SOIC (0.154", 3.90mm Width)

IRF150P221AKMA1

Infineon Technologies

MOSFET N-CH 150V 186A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

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Estoque1.563

MOSFET (Metal Oxide)

150 V

186A (Tc)

10V

4.6V @ 264µA

100 nC @ 10 V

6000 pF @ 75 V

±20V

-

3.8W (Ta), 341W (Tc)

4.5mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IGT60R190D1SATMA1

Infineon Technologies

GANFET N-CH 600V 12.5A 8HSOF

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 55.5W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-3
Package / Case: 8-PowerSFN

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GaNFET (Gallium Nitride)

600 V

12.5A (Tc)

-

1.6V @ 960µA

-

157 pF @ 400 V

-10V

-

55.5W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-HSOF-8-3

8-PowerSFN

IPB60R600C6ATMA1

Infineon Technologies

MOSFET N-CH 600V 7.3A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

600 V

7.3A (Tc)

10V

3.5V @ 200µA

20.5 nC @ 10 V

440 pF @ 100 V

±20V

-

63W (Tc)

600mOhm @ 2.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB60R099P7ATMA1

Infineon Technologies

MOSFET N-CH 600V 31A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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MOSFET (Metal Oxide)

600 V

31A (Tc)

10V

4V @ 530µA

45 nC @ 10 V

1952 pF @ 400 V

±20V

-

117W (Tc)

99mOhm @ 10.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

AIMZH120R010M1TXKSA1

Infineon Technologies

SIC_DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs(th) (Max) @ Id: 5.1V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 750W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-11
Package / Case: TO-247-4

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SiC (Silicon Carbide Junction Transistor)

1200 V

202A (Tc)

18V, 20V

5.1V @ 30mA

178 nC @ 20 V

5703 pF @ 800 V

+23V, -5V

-

750W (Tc)

11.3mOhm @ 93A, 20V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-11

TO-247-4

IPB60R125C6ATMA1

Infineon Technologies

MOSFET N-CH 600V 30A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

Estoque7.065

MOSFET (Metal Oxide)

600 V

30A (Tc)

10V

3.5V @ 960µA

96 nC @ 10 V

2127 pF @ 100 V

±20V

-

219W (Tc)

125mOhm @ 14.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPA60R280C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 13.8A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

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MOSFET (Metal Oxide)

600 V

13.8A (Tc)

10V

3.5V @ 430µA

43 nC @ 10 V

950 pF @ 100 V

±20V

-

32W (Tc)

280mOhm @ 6.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IAUTN12S5N018TATMA1

Infineon Technologies

MOSFET_(120V 300V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-2
Package / Case: 16-PowerSOP Module

pacote: -

Estoque4.827

MOSFET (Metal Oxide)

120 V

-

-55°C ~ 175°C

Surface Mount

PG-HDSOP-16-2

16-PowerSOP Module

BSS126IXTSA1

Infineon Technologies

MOSFET N-CH 600V 21MA SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 8µA
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3-5
Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: -

Estoque13.032

MOSFET (Metal Oxide)

600 V

21mA (Ta)

-

1.6V @ 8µA

1.4 nC @ 5 V

21 pF @ 25 V

±20V

Depletion Mode

500mW (Ta)

500Ohm @ 16mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT23-3-5

TO-236-3, SC-59, SOT-23-3

IAUCN04S7L019ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

40 V

-

10V

-

40 nC @ 10 V

-

-55°C ~ 175°C

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

IRFH8318TR2PBF

Infineon Technologies

MOSFET N-CH 30V 21A 5X6 PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

30 V

27A (Ta), 120A (Tc)

-

2.35V @ 50µA

41 nC @ 10 V

3180 pF @ 10 V

-

3.1mOhm @ 20A, 10V

-

Surface Mount

PQFN (5x6)

8-PowerTDFN

ISP20EP10LMXTSA1

Infineon Technologies

SMALL SIGNAL MOSFETS PG-SOT223-4

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 78µA
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA

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MOSFET (Metal Oxide)

100 V

650mA (Ta), 990mA (Tc)

4.5V, 10V

2V @ 78µA

3.5 nC @ 10 V

170 pF @ 50 V

±20V

-

1.8W (Ta), 4.2W (Tc)

2Ohm @ 600mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4

TO-261-4, TO-261AA

IQE046N08LM5ATMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 47µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-5
Package / Case: 8-PowerTDFN

pacote: -

Estoque12.555

MOSFET (Metal Oxide)

80 V

15.6A (Ta), 99A (Tc)

4.5V, 10V

2.3V @ 47µA

38 nC @ 10 V

3250 pF @ 40 V

±20V

-

2.5W (Ta), 100W (Tc)

4.6mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-5

8-PowerTDFN

IPN70R1K2P7SATMA1

Infineon Technologies

MOSFET N-CH 700V 4.5A SOT223

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223
Package / Case: TO-261-4, TO-261AA

pacote: -

Estoque2.433

MOSFET (Metal Oxide)

700 V

4.5A (Tc)

10V

3.5V @ 40µA

4.8 nC @ 10 V

174 pF @ 400 V

±16V

-

6.3W (Tc)

1.2Ohm @ 900mA, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-SOT223

TO-261-4, TO-261AA

IMBG120R090M1HXTMA1

Infineon Technologies

SICFET N-CH 1.2KV 26A TO263

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
Vgs (Max): +18V, -15V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-12
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

pacote: -

Estoque4.968

SiCFET (Silicon Carbide)

1200 V

26A (Tc)

-

5.7V @ 3.7mA

23 nC @ 18 V

763 pF @ 800 V

+18V, -15V

-

136W (Tc)

125mOhm @ 8.5A, 18V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-12

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPA70R750P7SXKSA1

Infineon Technologies

MOSFET N-CH 700V 6.5A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 21.2W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

pacote: -

Estoque228

MOSFET (Metal Oxide)

700 V

6.5A (Tc)

10V

3.5V @ 70µA

8.3 nC @ 400 V

306 pF @ 400 V

±16V

-

21.2W (Tc)

750mOhm @ 1.4A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPB020N04NGATMA1

Infineon Technologies

MOSFET N-CH 40V 140A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 95µA
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

pacote: -

Estoque10.344

MOSFET (Metal Oxide)

40 V

140A (Tc)

10V

4V @ 95µA

120 nC @ 10 V

9700 pF @ 20 V

±20V

-

167W (Tc)

2mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2PAK (6 Leads + Tab)

IRF8714TRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque11.520

-

IPI120N04S4-01M

Infineon Technologies

MOSFET N-CH TO262-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Request a Quote

-

IMYH200R100M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 2000 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): +20V, -7V
FET Feature: -
Power Dissipation (Max): 217W (Tc)
Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-U04
Package / Case: TO-247-4

pacote: -

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SiC (Silicon Carbide Junction Transistor)

2000 V

26A (Tc)

15V, 18V

5.5V @ 6mA

55 nC @ 18 V

-

+20V, -7V

-

217W (Tc)

131mOhm @ 10A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-U04

TO-247-4

IPB90R340C3ATMA2

Infineon Technologies

MOSFET N-CH 900V 15A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

Estoque5.712

MOSFET (Metal Oxide)

900 V

15A (Tc)

10V

3.5V @ 1mA

94 nC @ 10 V

2400 pF @ 100 V

±20V

-

208W (Tc)

340mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPB50N10S3L16ATMA2

Infineon Technologies

MOSFET N-CH 100V 70A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

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MOSFET (Metal Oxide)

100 V

50A (Tc)

4.5V, 10V

2.4V @ 60µA

64 nC @ 10 V

4180 pF @ 25 V

±20V

-

100W (Tc)

15.7mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSC110N15NS5SCATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 91µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-7
Package / Case: 8-PowerTDFN

pacote: -

Estoque18.765

MOSFET (Metal Oxide)

150 V

76A (Tc)

8V, 10V

4.6V @ 91µA

35 nC @ 10 V

2770 pF @ 75 V

±20V

-

125W (Tc)

11mOhm @ 38A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-7

8-PowerTDFN

IPW50R250CPFKSA1

Infineon Technologies

MOSFET N-CH 500V 13A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-1
Package / Case: TO-247-3

pacote: -

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MOSFET (Metal Oxide)

500 V

13A (Tc)

10V

3.5V @ 520µA

36 nC @ 10 V

1420 pF @ 100 V

±20V

-

114W (Tc)

250mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-1

TO-247-3

IPZA65R018CFD7XKSA1

Infineon Technologies

HIGH POWER_NEW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-3
Package / Case: TO-247-4

pacote: -

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MOSFET (Metal Oxide)

650 V

106A (Tc)

10V

4.5V @ 2.91mA

234 nC @ 10 V

11660 pF @ 400 V

±20V

-

446W (Tc)

18mOhm @ 58.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4-3

TO-247-4

Nº de peças	Fabricante	Descrição	pacote	Estoque	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPA11N60C3IN	Infineon Technologies	MOSFET N-CH 650V 11A TO220-3-31 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	pacote: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	3.9V @ 500µA	60 nC @ 10 V	1200 pF @ 25 V	±20V	-	33W (Tc)	380mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
BSC0703LSATMA1	Infineon Technologies	MOSFET N-CH 60V 15A/64A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	pacote: -	Estoque5.220	MOSFET (Metal Oxide)	60 V	15A (Ta), 64A (Tc)	4.5V, 10V	2.3V @ 20µA	13 nC @ 4.5 V	1800 pF @ 30 V	±20V	-	2.5W (Ta), 46W (Tc)	6.5mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
BSO203SP	Infineon Technologies	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	pacote: -	Request a Quote	MOSFET (Metal Oxide)	20 V	7A (Ta)	2.5V, 4.5V	1.2V @ 50µA	39 nC @ 4.5 V	3750 pF @ 15 V	±12V	-	1.6W (Ta)	21mOhm @ 8.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IRF150P221AKMA1	Infineon Technologies	MOSFET N-CH 150V 186A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 186A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.6V @ 264µA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 341W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	pacote: -	Estoque1.563	MOSFET (Metal Oxide)	150 V	186A (Tc)	10V	4.6V @ 264µA	100 nC @ 10 V	6000 pF @ 75 V	±20V	-	3.8W (Ta), 341W (Tc)	4.5mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IGT60R190D1SATMA1	Infineon Technologies	GANFET N-CH 600V 12.5A 8HSOF FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 55.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	pacote: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	12.5A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	55.5W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-3	8-PowerSFN
IPB60R600C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 7.3A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	3.5V @ 200µA	20.5 nC @ 10 V	440 pF @ 100 V	±20V	-	63W (Tc)	600mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB60R099P7ATMA1	Infineon Technologies	MOSFET N-CH 600V 31A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 117W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Request a Quote	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	4V @ 530µA	45 nC @ 10 V	1952 pF @ 400 V	±20V	-	117W (Tc)	99mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AIMZH120R010M1TXKSA1	Infineon Technologies	SIC_DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 202A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs(th) (Max) @ Id: 5.1V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 750W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-11 Package / Case: TO-247-4	pacote: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	1200 V	202A (Tc)	18V, 20V	5.1V @ 30mA	178 nC @ 20 V	5703 pF @ 800 V	+23V, -5V	-	750W (Tc)	11.3mOhm @ 93A, 20V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-11	TO-247-4
IPB60R125C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Estoque7.065	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	3.5V @ 960µA	96 nC @ 10 V	2127 pF @ 100 V	±20V	-	219W (Tc)	125mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPA60R280C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 13.8A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 430µA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacote: -	Request a Quote	MOSFET (Metal Oxide)	600 V	13.8A (Tc)	10V	3.5V @ 430µA	43 nC @ 10 V	950 pF @ 100 V	±20V	-	32W (Tc)	280mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IAUTN12S5N018TATMA1	Infineon Technologies	MOSFET_(120V 300V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	pacote: -	Estoque4.827	MOSFET (Metal Oxide)	120 V	-	-	-	-	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
BSS126IXTSA1	Infineon Technologies	MOSFET N-CH 600V 21MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 8µA Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3-5 Package / Case: TO-236-3, SC-59, SOT-23-3	pacote: -	Estoque13.032	MOSFET (Metal Oxide)	600 V	21mA (Ta)	-	1.6V @ 8µA	1.4 nC @ 5 V	21 pF @ 25 V	±20V	Depletion Mode	500mW (Ta)	500Ohm @ 16mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3-5	TO-236-3, SC-59, SOT-23-3
IAUCN04S7L019ATMA1	Infineon Technologies	MOSFET_(20V 40V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	40 V	-	10V	-	40 nC @ 10 V	-	-	-	-	-	-55°C ~ 175°C	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
IRFH8318TR2PBF	Infineon Technologies	MOSFET N-CH 30V 21A 5X6 PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-PowerTDFN	pacote: -	Request a Quote	MOSFET (Metal Oxide)	30 V	27A (Ta), 120A (Tc)	-	2.35V @ 50µA	41 nC @ 10 V	3180 pF @ 10 V	-	-	-	3.1mOhm @ 20A, 10V	-	Surface Mount	PQFN (5x6)	8-PowerTDFN
ISP20EP10LMXTSA1	Infineon Technologies	SMALL SIGNAL MOSFETS PG-SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 78µA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	pacote: -	Request a Quote	MOSFET (Metal Oxide)	100 V	650mA (Ta), 990mA (Tc)	4.5V, 10V	2V @ 78µA	3.5 nC @ 10 V	170 pF @ 50 V	±20V	-	1.8W (Ta), 4.2W (Tc)	2Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
IQE046N08LM5ATMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 15.6A (Ta), 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 47µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-5 Package / Case: 8-PowerTDFN	pacote: -	Estoque12.555	MOSFET (Metal Oxide)	80 V	15.6A (Ta), 99A (Tc)	4.5V, 10V	2.3V @ 47µA	38 nC @ 10 V	3250 pF @ 40 V	±20V	-	2.5W (Ta), 100W (Tc)	4.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-5	8-PowerTDFN
IPN70R1K2P7SATMA1	Infineon Technologies	MOSFET N-CH 700V 4.5A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 6.3W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	pacote: -	Estoque2.433	MOSFET (Metal Oxide)	700 V	4.5A (Tc)	10V	3.5V @ 40µA	4.8 nC @ 10 V	174 pF @ 400 V	±16V	-	6.3W (Tc)	1.2Ohm @ 900mA, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
IMBG120R090M1HXTMA1	Infineon Technologies	SICFET N-CH 1.2KV 26A TO263 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5.7V @ 3.7mA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V Vgs (Max): +18V, -15V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-12 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	pacote: -	Estoque4.968	SiCFET (Silicon Carbide)	1200 V	26A (Tc)	-	5.7V @ 3.7mA	23 nC @ 18 V	763 pF @ 800 V	+18V, -15V	-	136W (Tc)	125mOhm @ 8.5A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPA70R750P7SXKSA1	Infineon Technologies	MOSFET N-CH 700V 6.5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 21.2W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	pacote: -	Estoque228	MOSFET (Metal Oxide)	700 V	6.5A (Tc)	10V	3.5V @ 70µA	8.3 nC @ 400 V	306 pF @ 400 V	±16V	-	21.2W (Tc)	750mOhm @ 1.4A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPB020N04NGATMA1	Infineon Technologies	MOSFET N-CH 40V 140A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 95µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	pacote: -	Estoque10.344	MOSFET (Metal Oxide)	40 V	140A (Tc)	10V	4V @ 95µA	120 nC @ 10 V	9700 pF @ 20 V	±20V	-	167W (Tc)	2mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
IRF8714TRPBFXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Estoque11.520	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI120N04S4-01M	Infineon Technologies	MOSFET N-CH TO262-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMYH200R100M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 2000 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +20V, -7V FET Feature: - Power Dissipation (Max): 217W (Tc) Rds On (Max) @ Id, Vgs: 131mOhm @ 10A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-U04 Package / Case: TO-247-4	pacote: -	Request a Quote	SiC (Silicon Carbide Junction Transistor)	2000 V	26A (Tc)	15V, 18V	5.5V @ 6mA	55 nC @ 18 V	-	+20V, -7V	-	217W (Tc)	131mOhm @ 10A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-U04	TO-247-4
IPB90R340C3ATMA2	Infineon Technologies	MOSFET N-CH 900V 15A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Estoque5.712	MOSFET (Metal Oxide)	900 V	15A (Tc)	10V	3.5V @ 1mA	94 nC @ 10 V	2400 pF @ 100 V	±20V	-	208W (Tc)	340mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB50N10S3L16ATMA2	Infineon Technologies	MOSFET N-CH 100V 70A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Request a Quote	MOSFET (Metal Oxide)	100 V	50A (Tc)	4.5V, 10V	2.4V @ 60µA	64 nC @ 10 V	4180 pF @ 25 V	±20V	-	100W (Tc)	15.7mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC110N15NS5SCATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.6V @ 91µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	pacote: -	Estoque18.765	MOSFET (Metal Oxide)	150 V	76A (Tc)	8V, 10V	4.6V @ 91µA	35 nC @ 10 V	2770 pF @ 75 V	±20V	-	125W (Tc)	11mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IPW50R250CPFKSA1	Infineon Technologies	MOSFET N-CH 500V 13A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-1 Package / Case: TO-247-3	pacote: -	Request a Quote	MOSFET (Metal Oxide)	500 V	13A (Tc)	10V	3.5V @ 520µA	36 nC @ 10 V	1420 pF @ 100 V	±20V	-	114W (Tc)	250mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-1	TO-247-3
IPZA65R018CFD7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11660 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 58.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-3 Package / Case: TO-247-4	pacote: -	Request a Quote	MOSFET (Metal Oxide)	650 V	106A (Tc)	10V	4.5V @ 2.91mA	234 nC @ 10 V	11660 pF @ 400 V	±20V	-	446W (Tc)	18mOhm @ 58.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4-3	TO-247-4