Página 22 - Infineon Technologies Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
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Infineon Technologies Produtos - Transistores - FET, MOSFET - Simples

Registros 8.381
Página  22/300
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IMW120R140M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 19A TO247-3

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 6A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
pacote: -
Estoque531
SiCFET (Silicon Carbide)
1200 V
19A (Tc)
15V, 18V
5.7V @ 2.5mA
13 nC @ 18 V
454 pF @ 800 V
+23V, -7V
-
94W (Tc)
182mOhm @ 6A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IPBE65R075CFD7AATMA1
Infineon Technologies

MOSFET N-CH 650V 32A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 820µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 171W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3-10
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
pacote: -
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MOSFET (Metal Oxide)
650 V
32A (Tc)
10V
4.5V @ 820µA
68 nC @ 10 V
3288 pF @ 400 V
±20V
-
171W (Tc)
75mOhm @ 16.4A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO263-7-3-10
TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
AUIRFS3006-7TRL
Infineon Technologies

MOSFET N-CH 60V 293A D2PAK-7P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
pacote: -
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MOSFET (Metal Oxide)
60 V
240A (Tc)
-
4V @ 250µA
300 nC @ 10 V
8850 pF @ 50 V
-
-
375W (Tc)
2.1mOhm @ 168A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-7, D2PAK (6 Leads + Tab)
IPB60R280C6ATMA1
Infineon Technologies

MOSFET N-CH 600V 13.8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
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MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
3.5V @ 430µA
43 nC @ 10 V
950 pF @ 100 V
±20V
-
104W (Tc)
280mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB60R125CPATMA1
Infineon Technologies

MOSFET N-CH 600V 25A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque5.286
MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
3.5V @ 1.1mA
70 nC @ 10 V
2500 pF @ 100 V
±20V
-
208W (Tc)
125mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSP135IXTSA1
Infineon Technologies

MOSFET N-CH 600V 120MA SOT223-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 98 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
pacote: -
Estoque7.773
MOSFET (Metal Oxide)
600 V
120mA (Ta)
0V, 10V
1V @ 94µA
3.7 nC @ 5 V
98 pF @ 25 V
±20V
Depletion Mode
1.8W (Ta)
45Ohm @ 120mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
BSC0902NSATMA1
Infineon Technologies

MOSFET N-CH 30V 24A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-6
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque25.335
MOSFET (Metal Oxide)
30 V
24A (Ta), 100A (Tc)
4.5V, 10V
2.2V @ 250µA
26 nC @ 10 V
1700 pF @ 15 V
±20V
-
2.5W (Ta), 48W (Tc)
2.6mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
SIPC69N50C3X1SA2
Infineon Technologies

MOSFET COOL MOS SAWED WAFER

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPD350N06LGBUMA1
Infineon Technologies

MOSFET N-CH 60V 29A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
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MOSFET (Metal Oxide)
60 V
29A (Tc)
4.5V, 10V
2V @ 28µA
13 nC @ 5 V
800 pF @ 30 V
±20V
-
68W (Tc)
35mOhm @ 29A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IRFC120NB
Infineon Technologies

MOSFET 100V 9.4A DIE

  • FET Type: -
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 9.4A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die
pacote: -
Request a Quote
MOSFET (Metal Oxide)
100 V
9.4A
-
-
-
-
-
-
-
210mOhm @ 9.4A, 10V
-
Surface Mount
Die
Die
IPD60R280P7SE8228AUMA1
Infineon Technologies

MOSFET N-CH 600V 12A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 190µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 53W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Request a Quote
MOSFET (Metal Oxide)
600 V
12A (Tc)
10V
4V @ 190µA
18 nC @ 10 V
761 pF @ 400 V
±20V
-
53W (Tc)
280mOhm @ 3.8A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPW60R190P6FKSA1
Infineon Technologies

MOSFET N-CH 600V 20.2A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 630µ
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
pacote: -
Estoque492
MOSFET (Metal Oxide)
600 V
20.2A (Tc)
10V
4.5V @ 630µ
11 nC @ 10 V
1750 pF @ 100 V
±20V
-
151W (Tc)
190mOhm @ 7.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
BSC017N04NSGATMA1
Infineon Technologies

MOSFET N-CH 40V 30A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
pacote: -
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MOSFET (Metal Oxide)
40 V
30A (Ta), 100A (Tc)
10V
4V @ 85µA
108 nC @ 10 V
8800 pF @ 20 V
±20V
-
2.5W (Ta), 139W (Tc)
1.7mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
IAUCN04S6N018TATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
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-
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-
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-
-
-
-
-
94-4344PBF
Infineon Technologies

IC MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
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-
-
-
-
-
-
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-
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-
-
-
-
ISC019N03L5SATMA1
Infineon Technologies

MOSFET N-CH 30V 28A/100A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-5
  • Package / Case: 8-PowerTDFN
pacote: -
Estoque78.147
MOSFET (Metal Oxide)
30 V
28A (Ta), 100A (Tc)
4.5V, 10V
2V @ 250µA
44 nC @ 10 V
2800 pF @ 15 V
±20V
-
2.5W (Ta), 69W (Tc)
1.9mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-5
8-PowerTDFN
IPP200N25N3GXKSA1
Infineon Technologies

MOSFET N-CH 250V 64A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
pacote: -
Estoque18.099
MOSFET (Metal Oxide)
250 V
64A (Tc)
10V
4V @ 270µA
86 nC @ 10 V
7100 pF @ 100 V
±20V
-
300W (Tc)
20mOhm @ 64A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPP50R380CEXKSA1
Infineon Technologies

MOSFET N-CH 500V 9.9A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 260µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 73W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
pacote: -
Estoque1.500
MOSFET (Metal Oxide)
500 V
9.9A (Tc)
13V
3.5V @ 260µA
24.8 nC @ 10 V
584 pF @ 100 V
±20V
-
73W (Tc)
380mOhm @ 3.2A, 13V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IMZ120R090M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 26A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-1
  • Package / Case: TO-247-4
pacote: -
Estoque1.776
SiCFET (Silicon Carbide)
1200 V
26A (Tc)
15V, 18V
5.7V @ 3.7mA
21 nC @ 18 V
707 pF @ 800 V
+23V, -7V
-
115W (Tc)
117mOhm @ 8.5A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
ISP26DP06NMSATMA1
Infineon Technologies

MOSFET P-CH 60V SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223
  • Package / Case: TO-261-4, TO-261AA
pacote: -
Estoque186
MOSFET (Metal Oxide)
60 V
1.9A (Ta)
-
-
-
-
±20V
-
-
-
-
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
IAUTN12S5N017ATMA1
Infineon Technologies

MOSFET_(120V 300V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
pacote: -
Estoque2.991
MOSFET (Metal Oxide)
120 V
-
-
-
-
-
-
-
-
-
-55°C ~ 175°C
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IQDH45N04LM6CGATMA1
Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
  • Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TTFN-9-U02
  • Package / Case: 9-PowerTDFN
pacote: -
Estoque25.020
MOSFET (Metal Oxide)
40 V
60A (Ta), 637A (Tc)
4.5V, 10V
2.3V @ 1.449mA
129 nC @ 10 V
12000 pF @ 20 V
±20V
-
3W (Ta), 333W (Tc)
0.45mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TTFN-9-U02
9-PowerTDFN
ISC110N12NM6ATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSO8
  • Package / Case: 8-PowerTDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
120 V
11A (Ta), 62A (Tc)
8V, 10V
3.6V @ 35µA
19.3 nC @ 10 V
1400 pF @ 60 V
±20V
-
3W (Ta), 94W (Tc)
11mOhm @ 26A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SuperSO8
8-PowerTDFN
IPT019N08N5ATMA1
Infineon Technologies

MOSFET N-CH 80V 32A/247A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 247A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 159µA
  • Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9mOhm @ 150A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
pacote: -
Estoque11.970
MOSFET (Metal Oxide)
80 V
32A (Ta), 247A (Tc)
6V, 10V
3.8V @ 159µA
127 nC @ 10 V
9200 pF @ 40 V
±20V
-
231W (Tc)
1.9mOhm @ 150A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
IPB50R140CPATMA1
Infineon Technologies

MOSFET N-CH 550V 23A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 930µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Request a Quote
MOSFET (Metal Oxide)
550 V
23A (Tc)
10V
3.5V @ 930µA
64 nC @ 10 V
2540 pF @ 100 V
±20V
-
192W (Tc)
140mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSZ0905PNSATMA1
Infineon Technologies

MOSFET P-CH 30V 40A TDSON-8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 1.9V @ 105µA
  • Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
pacote: -
Request a Quote
MOSFET (Metal Oxide)
30 V
40A (Tc)
6V, 10V
1.9V @ 105µA
43.2 nC @ 10 V
3190 pF @ 15 V
±25V
-
69W (Ta)
8.6mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
ISP98DP10LMXTSA1
Infineon Technologies

SMALL SIGNAL MOSFETS PG-SOT223-4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 165µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
  • Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
pacote: -
Request a Quote
MOSFET (Metal Oxide)
100 V
930mA (Ta), 1.55A (Tc)
4.5V, 10V
2V @ 165µA
7.2 nC @ 10 V
350 pF @ 50 V
±20V
-
1.8W (Ta), 5W (Tc)
980mOhm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
IPW60R075CPFKSA1
Infineon Technologies

MOSFET N-CH 650V 39A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 313W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
pacote: -
Estoque720
MOSFET (Metal Oxide)
650 V
39A (Tc)
10V
3.5V @ 1.7mA
116 nC @ 10 V
4000 pF @ 100 V
±20V
-
313W (Tc)
75mOhm @ 26A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3