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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque3.552 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 30A TO-3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Rds On (Max) @ Id, Vgs: 68 mOhm @ 15A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)IS
- Package / Case: TO-3P-3, SC-65-3
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pacote: TO-3P-3, SC-65-3 |
Estoque5.440 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8SOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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pacote: 8-SOIC (0.173", 4.40mm Width) |
Estoque5.312 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 17A 8TSON-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
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pacote: 8-PowerVDFN |
Estoque6.608 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 38.8A TO-3P(N)
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
- Vgs (Max): ±30V
- FET Feature: Super Junction
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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pacote: TO-3P-3, SC-65-3 |
Estoque9.384 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.3A ES6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 85 mOhm @ 1.5A, 4V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ES6 (1.6x1.6)
- Package / Case: SOT-563, SOT-666
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pacote: SOT-563, SOT-666 |
Estoque115.236 |
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Toshiba Semiconductor and Storage |
TRANS NPN 50MA 600V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 600V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
- Power - Max: 900mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
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pacote: TO-226-3, TO-92-3 Long Body |
Estoque2.560 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.2W S-MINI
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque5.136 |
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Toshiba Semiconductor and Storage |
TRANS 2NPN PREBIAS 0.1W ES6
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 1k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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pacote: SOT-563, SOT-666 |
Estoque35.862 |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: 345pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: L-FLAT?
- Supplier Device Package: L-FLAT? (4x5.5)
- Operating Temperature - Junction: -40°C ~ 125°C
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pacote: L-FLAT? |
Estoque7.472 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 100MA SC70
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
- Operating Temperature - Junction: 125°C (Max)
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pacote: SC-70, SOT-323 |
Estoque4.000 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC59-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
- Operating Temperature - Junction: 125°C (Max)
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque26.604 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY GP 80V 100MA USQ
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-82
- Supplier Device Package: -
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pacote: SC-82 |
Estoque4.672 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 30MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 30mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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pacote: TO-226-3, TO-92-3 Long Body |
Estoque7.728 |
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Toshiba Semiconductor and Storage |
IC DC MOTOR DRVR PAR 32VQFN
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: Parallel, PWM
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 1.5A
- Voltage - Supply: 10 V ~ 45 V
- Voltage - Load: 10 V ~ 45 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 32-VFQFN Exposed Pad
- Supplier Device Package: 32-VQFN (5x5)
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pacote: 32-VFQFN Exposed Pad |
Estoque3.040 |
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Toshiba Semiconductor and Storage |
16GB SLC NAND TSOP 24NM 4K PAGE
- Memory Type: Non-Volatile
- Memory Format: EEPROM
- Technology: EEPROM - NAND
- Memory Size: 16Gb (2G x 8)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25ns
- Voltage - Supply: 2.7 V ~ 3.6 V
- Operating Temperature: 0°C ~ 70°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package: 48-TSOP I
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pacote: 48-TFSOP (0.724", 18.40mm Width) |
Estoque6.624 |
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Toshiba Semiconductor and Storage |
IC GATE NAND 4CH 2-INP 14-DIP
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 5.5 V
- Current - Quiescent (Max): 4µA
- Current - Output High, Low: 24mA, 24mA
- Logic Level - Low: 0.5 V ~ 1.65 V
- Logic Level - High: 1.5 V ~ 3.85 V
- Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Through Hole
- Supplier Device Package: 14-DIP
- Package / Case: 14-DIP (0.300", 7.62mm)
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pacote: 14-DIP (0.300", 7.62mm) |
Estoque16.272 |
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Toshiba Semiconductor and Storage |
IC INVERTER 6CH 14SOIC
- Logic Type: Inverter
- Number of Circuits: 6
- Number of Inputs: 6
- Features: -
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: 5.2mA, 5.2mA
- Logic Level - Low: 0.3 V ~ 1.2 V
- Logic Level - High: 1.7 V ~ 4.8 V
- Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
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pacote: 14-SOIC (0.154", 3.90mm Width) |
Estoque23.496 |
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Toshiba Semiconductor and Storage |
IC D-TYPE POS TRG SNGL 20DIP
- Function: Reset
- Type: D-Type
- Output Type: Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 8
- Clock Frequency: 66MHz
- Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 5.2mA, 5.2mA
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Iq): 40µA
- Input Capacitance: 5pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 20-DIP (0.300", 7.62mm)
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pacote: 20-DIP (0.300", 7.62mm) |
Estoque10.920 |
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Toshiba Semiconductor and Storage |
IC D-TYPE POS TRG SNGL 16SOIC
- Function: Master Reset
- Type: D-Type
- Output Type: Non-Inverted
- Number of Elements: 1
- Number of Bits per Element: 6
- Clock Frequency: 71MHz
- Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
- Trigger Type: Positive Edge
- Current - Output High, Low: 5.2mA, 5.2mA
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Iq): 4µA
- Input Capacitance: 5pF
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.154", 3.90mm Width)
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pacote: 16-SOIC (0.154", 3.90mm Width) |
Estoque19.470 |
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Toshiba Semiconductor and Storage |
IC BUS BUFFER TRI-ST HEX 16TSSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 2, 4 (Hex)
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-TSSOP
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pacote: 16-TSSOP (0.173", 4.40mm Width) |
Estoque3.120 |
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Toshiba Semiconductor and Storage |
IC BUS BUFFER DUAL NON-INV US8
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 8mA, 8mA
- Voltage - Supply: 2 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-VFSOP (0.091", 2.30mm Width)
- Supplier Device Package: US8
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pacote: 8-VFSOP (0.091", 2.30mm Width) |
Estoque1.401.336 |
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Toshiba Semiconductor and Storage |
IC MUX/DEMUX DUAL 1X1 8SOP
- Applications: -
- Multiplexer/Demultiplexer Circuit: -
- Switch Circuit: -
- Number of Channels: 2
- On-State Resistance (Max): 160 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 18 V
- Voltage - Supply, Dual (V±): -
- -3db Bandwidth: -
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
- Supplier Device Package: 8-SSOP
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pacote: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
Estoque3.280 |
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Toshiba Semiconductor and Storage |
IC MCU 8BIT 60KB FLASH 64QFP
- Core Processor: 870/C
- Core Size: 8-Bit
- Speed: 16MHz
- Connectivity: I2C, SIO, UART/USART
- Peripherals: LED, PWM, WDT
- Number of I/O: 56
- Program Memory Size: 60KB (60K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 2K x 8
- Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 64-BQFP
- Supplier Device Package: 64-QFP (14x14)
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pacote: 64-BQFP |
Estoque3.120 |
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Toshiba Semiconductor and Storage |
LED LETERAS COOL WHT 5000K 2SMD
- Color: White, Cool
- CCT (K): 5000K
- Flux @ 85°C, Current - Test: -
- Flux @ 25°C, Current - Test: 22 lm (18 lm ~ 26 lm)
- Current - Test: 80mA
- Voltage - Forward (Vf) (Typ): 2.8V
- Lumens/Watt @ Current - Test: 131 lm/W
- CRI (Color Rendering Index): 80
- Current - Max: 180mA
- Viewing Angle: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: SMD
- Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
- Height - Seated (Max): 0.015" (0.39mm)
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pacote: 2-SMD, No Lead |
Estoque4.662 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
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pacote: 16-SOIC (0.179", 4.55mm Width) |
Estoque3.546 |
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Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS 4-SO
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 100% @ 5mA
- Current Transfer Ratio (Max): 600% @ 5mA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: AC, DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 4-SOIC (0.179", 4.55mm)
- Supplier Device Package: 4-SO
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pacote: 4-SOIC (0.179", 4.55mm) |
Estoque8.244 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRVR SO6L
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 35kV/µs
- Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 15ns, 8ns
- Current - Output High, Low: 2.5A, 2.5A
- Current - Peak Output: 2.5A
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 6-SO
- Approvals: CQC, CSA, cUL, UL, VDE
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pacote: 6-SOIC (0.295", 7.50mm Width) |
Estoque6.282 |
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Toshiba Semiconductor and Storage |
BRUSHLESS MOTOR DRIVER IC FOR 1
- Motor Type - Stepper: -
- Motor Type - AC, DC: -
- Function: -
- Output Configuration: -
- Interface: -
- Technology: -
- Step Resolution: -
- Applications: -
- Current - Output: -
- Voltage - Supply: -
- Voltage - Load: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 36-WFQFN Exposed Pad
- Supplier Device Package: 36-WQFN (5x5)
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pacote: 36-WFQFN Exposed Pad |
Estoque37.422 |
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Toshiba Semiconductor and Storage |
200MA LDO VOUT=1.9V DROPOUT=200M
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.6V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 2µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
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pacote: 4-XFDFN Exposed Pad |
Estoque97.074 |
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