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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 3DP 2-7K1A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: DP
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.600 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 8A TO-3PN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)IS
- Package / Case: TO-3P-3, SC-65-3
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pacote: TO-3P-3, SC-65-3 |
Estoque5.424 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A T0247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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pacote: TO-247-3 |
Estoque21.132 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH SMQ
- Transistor Type: N-Channel Dual Gate
- Frequency: 800MHz
- Gain: 22.5dB
- Voltage - Test: 6V
- Current Rating: 30mA
- Noise Figure: 2.5dB
- Current - Test: 10mA
- Power - Output: -
- Voltage - Rated: 12.5V
- Package / Case: SC-61AA
- Supplier Device Package: SMQ
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pacote: SC-61AA |
Estoque54.072 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 0.1W USM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): 10k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: USM
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pacote: SC-70, SOT-323 |
Estoque58.632 |
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Toshiba Semiconductor and Storage |
TRANS 2PNP PREBIAS 0.2W US6
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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pacote: 6-TSSOP, SC-88, SOT-363 |
Estoque27.378 |
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Toshiba Semiconductor and Storage |
DIODE VARACTOR 10V ESC
- Capacitance @ Vr, F: 5.45pF @ 4V, 1MHz
- Capacitance Ratio: 2.1
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 10V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
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pacote: SC-79, SOD-523 |
Estoque69.774 |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC59-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 500nA @ 80V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59-3
- Operating Temperature - Junction: 125°C (Max)
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque30.000 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 150MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -30°C ~ 85°C
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: LSTM
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pacote: TO-226-3, TO-92-3 Long Body |
Estoque6.688 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR POS ADJ 1A 5HSIP
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 16V
- Voltage - Output (Min/Fixed): 1.5V
- Voltage - Output (Max): 9V
- Voltage Dropout (Max): 0.5V @ 500mA
- Current - Output: 1A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1.7mA ~ 20mA
- PSRR: 63dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-6, DPak (5 Leads + Tab)
- Supplier Device Package: 5-HSIP
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pacote: TO-252-6, DPak (5 Leads + Tab) |
Estoque4.944 |
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Toshiba Semiconductor and Storage |
IC REG BUCK 3.3V 1A SYNC 8SON
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Fixed
- Number of Outputs: 1
- Voltage - Input (Min): 4.3V
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Current - Output: 1A
- Frequency - Switching: 1MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: PS-8 (2.9x2.4)
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pacote: 8-SMD, Flat Lead |
Estoque68.400 |
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Toshiba Semiconductor and Storage |
IC LOAD SWITCH 7CH 0.3A 16DIP
- Switch Type: General Purpose
- Number of Outputs: 7
- Ratio - Input:Output: 1:1
- Output Configuration: Low Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 50V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.75A
- Rds On (Typ): -
- Input Type: Inverting
- Features: -
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 16-DIP (0.300", 7.62mm)
- Supplier Device Package: 16-DIP
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pacote: 16-DIP (0.300", 7.62mm) |
Estoque7.668 |
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Toshiba Semiconductor and Storage |
IC PWR SWITCH P-CHAN 1:1 WCSP6E
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.4 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): -
- Current - Output (Max): 1.54A
- Rds On (Typ): 31 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge
- Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-UFBGA, WLCSP
- Supplier Device Package: 6-WCSPE (0.80x1.2)
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pacote: 6-UFBGA, WLCSP |
Estoque48.708 |
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Toshiba Semiconductor and Storage |
IC POWER DIST LOAD SWITCH 4WCSP
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: P-Channel
- Interface: On/Off
- Voltage - Load: 1.1 V ~ 5.5 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1A
- Rds On (Typ): 34 mOhm
- Input Type: Non-Inverting
- Features: Load Discharge, Slew Rate Controlled
- Fault Protection: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 4-UFBGA, WLCSP
- Supplier Device Package: 4-WCSPD (0.79x0.79)
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pacote: 4-UFBGA, WLCSP |
Estoque154.104 |
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Toshiba Semiconductor and Storage |
IC GATE NOR 4CH 2-INP 14-TSSOP
- Logic Type: NOR Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: -
- Voltage - Supply: 2 V ~ 3.6 V
- Current - Quiescent (Max): 2µA
- Current - Output High, Low: 4mA, 4mA
- Logic Level - Low: 0.5 V ~ 0.8 V
- Logic Level - High: 1.5 V ~ 2.4 V
- Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-TSSOP
- Package / Case: 14-TSSOP (0.173", 4.40mm Width)
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pacote: 14-TSSOP (0.173", 4.40mm Width) |
Estoque3.456 |
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Toshiba Semiconductor and Storage |
IC BUFFER NON-INV DUAL 6SSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Push-Pull
- Current - Output High, Low: 24mA, 24mA
- Voltage - Supply: 1.8 V ~ 3.6 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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pacote: 6-TSSOP, SC-88, SOT-363 |
Estoque3.824 |
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Toshiba Semiconductor and Storage |
TVS DIODE 5VWM 20VC
- Type: Steering (Rail to Rail)
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5V (Max)
- Voltage - Breakdown (Min): 6V
- Voltage - Clamping (Max) @ Ipp: 20V
- Current - Peak Pulse (10/1000µs): 2A (8/20µs)
- Power - Peak Pulse: 40W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 0.2pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: SL2
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pacote: 0201 (0603 Metric) |
Estoque4.842 |
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Toshiba Semiconductor and Storage |
TVS DIODE 23VWM
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 23V (Max)
- Voltage - Breakdown (Min): 28V
- Voltage - Clamping (Max) @ Ipp: -
- Current - Peak Pulse (10/1000µs): -
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 7pF @ 1MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
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pacote: SOD-923 |
Estoque945.546 |
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Toshiba Semiconductor and Storage |
MAGNETIC SWITCH OMNIPOLAR 5-UFV
- Function: Omnipolar Switch
- Technology: Hall Effect
- Polarization: Either
- Sensing Range: ±2.5mT Trip, ±0.3mT Release
- Test Condition: 25°C
- Voltage - Supply: 2.3 V ~ 3.6 V
- Current - Supply (Max): 1.3mA
- Current - Output (Max): 5mA
- Output Type: Open Drain
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 6-SMD (5 Leads), Flat Lead
- Supplier Device Package: 5-UFV
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pacote: 6-SMD (5 Leads), Flat Lead |
Estoque7.848 |
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Toshiba Semiconductor and Storage |
OPTOISO 2.5KV TRANS W/BASE 6DIP
- Number of Channels: 1
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): 40% @ 10mA
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Transistor with Base
- Voltage - Output (Max): 30V
- Current - Output / Channel: 100mA
- Voltage - Forward (Vf) (Typ): 1.15V
- Current - DC Forward (If) (Max): 60mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 100°C
- Mounting Type: Through Hole
- Package / Case: 6-DIP (0.300", 7.62mm)
- Supplier Device Package: 6-DIP
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pacote: 6-DIP (0.300", 7.62mm) |
Estoque3.834 |
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Toshiba Semiconductor and Storage |
OPTOISO 5KV GATE DRVR SO6L
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 5000Vrms
- Common Mode Transient Immunity (Min): 35kV/µs
- Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
- Pulse Width Distortion (Max): 50ns
- Rise / Fall Time (Typ): 15ns, 8ns
- Current - Output High, Low: 2.5A, 2.5A
- Current - Peak Output: 2.5A
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 20mA
- Voltage - Supply: 15 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 6-SO
- Approvals: CQC, CSA, cUL, UL
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pacote: 6-SOIC (0.295", 7.50mm Width) |
Estoque7.092 |
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Toshiba Semiconductor and Storage |
200MA LDO VOUT1.4V DROPOUT180MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque4.096 |
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Toshiba Semiconductor and Storage |
LOW DROPOUT (LDO) LINEAR VOLTAGE
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 2.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.327V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: Current Limit, Enable
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-UDFN Exposed Pad
- Supplier Device Package: 4-DFN (1x1)
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pacote: 4-UDFN Exposed Pad |
Estoque3.280 |
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Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A SSM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 4.7 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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pacote: - |
Estoque17.640 |
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Toshiba Semiconductor and Storage |
IC REG LINEAR 1.8V 300MA SMV
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.8V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.464V @ 300mA
- Current - Output: 300mA
- Current - Quiescent (Iq): 680 nA
- Current - Supply (Max): -
- PSRR: 70dB (1kHz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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pacote: - |
Estoque21.660 |
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Toshiba Semiconductor and Storage |
LOW DROPOUT (LDO) IOUT: 200MA PD
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.9V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.31V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 60 µA
- Current - Supply (Max): -
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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pacote: - |
Estoque12.000 |
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Toshiba Semiconductor and Storage |
TRANSISTOR NPN TO-3PN
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Request a Quote |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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pacote: - |
Estoque150 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 18A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 730µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad
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pacote: - |
Estoque14.850 |
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Toshiba Semiconductor and Storage |
LDO REG, IOUT: 500MA VOUT: 1.225
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.225V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): 13 µA
- Current - Supply (Max): -
- PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFBGA, WLCSP
- Supplier Device Package: 4-WCSPF (0.65x0.65)
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pacote: - |
Estoque525 |
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