Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 180MA VESM
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 1V @ 1mA | - | 9.5 pF @ 3 V | ±10V | - | 150mW (Ta) | 3Ohm @ 50mA, 4V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247 30MO
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pacote: - |
Estoque90 |
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SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 5V @ 13mA | 82 nC @ 18 V | 2925 pF @ 800 V | +25V, -10V | - | 249W (Tc) | 40mOhm @ 30A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 26A 8TSON
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pacote: - |
Estoque30.066 |
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MOSFET (Metal Oxide) | 60 V | 26A (Tc) | 4.5V, 10V | 2.5V @ 200µA | 17 nC @ 10 V | 1625 pF @ 30 V | ±20V | - | 610mW (Ta), 61W (Tc) | 11.4mOhm @ 13A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.1A UFM
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pacote: - |
Estoque2.244 |
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MOSFET (Metal Oxide) | 30 V | 1.1A (Ta) | 4V, 10V | 1.8V @ 100µA | - | 86 pF @ 15 V | ±20V | - | 800mW (Ta) | 390mOhm @ 500mA, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
40V U-MOS IX-H L-TOGL 1.0MOHM
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 3V @ 500µA | 84 nC @ 10 V | 6890 pF @ 10 V | ±20V | - | 230W (Tc) | 1mOhm @ 100A, 10V | 175°C | Surface Mount | L-TOGL™ | 8-PowerBSFN |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=60
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pacote: - |
Estoque15.354 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.5W (Ta) | 36mOhm @ 5A, 10V | 175°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 40A DPAK
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pacote: - |
Estoque2.010 |
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MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 2.5V @ 200µA | 26 nC @ 10 V | 1650 pF @ 10 V | ±20V | - | 88.2W (Tc) | 10.5mOhm @ 20A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -60V -3.5A SOT23
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pacote: - |
Estoque20.169 |
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MOSFET (Metal Oxide) | 60 V | 3.5A (Ta) | 4V, 10V | 2V @ 1mA | 15.1 nC @ 10 V | 660 pF @ 10 V | +10V, -20V | - | 1W (Ta) | 134mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A 6UDFN
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pacote: - |
Estoque11.775 |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | ±8V | Schottky Diode (Isolated) | 1W (Ta) | 112mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 6-µDFN (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 3.5A (Ta) | 10V | 4V @ 350µA | 13 nC @ 10 V | 450 pF @ 300 V | ±30V | - | 30W (Tc) | 2.2Ohm @ 1.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 650MA SOT23F
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pacote: - |
Estoque156.039 |
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MOSFET (Metal Oxide) | 60 V | 650mA (Ta) | 3V, 5V | 2V @ 1mA | 1.5 nC @ 5 V | 60 pF @ 12 V | ±12V | - | 1W (Ta) | 1.8Ohm @ 150mA, 5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UF6
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | ±8V | - | 1W (Ta) | 42.7mOhm @ 3A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 20A DPAK
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pacote: - |
Estoque29.727 |
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MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 6V, 10V | 3V @ 1mA | 37 nC @ 10 V | 1850 pF @ 10 V | +10V, -20V | - | 41W (Tc) | 22.2mOhm @ 10A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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pacote: - |
Estoque63 |
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MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 4.5V @ 790µA | 43 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 130W (Tc) | 230mOhm @ 7.9A, 10V | 150°C | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DTM
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pacote: - |
Estoque7.500 |
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MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 4.5V @ 790µA | 43 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 139W (Tc) | 245mOhm @ 7.9A, 10V | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
650V DTMOS VI TO-220 155MOHM
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pacote: - |
Estoque132 |
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MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 4V @ 730µA | 29 nC @ 10 V | 1635 pF @ 300 V | ±30V | - | 150W (Tc) | 155mOhm @ 9A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2A UFM
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pacote: - |
Estoque43.317 |
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MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 3.3V, 10V | 2V @ 1mA | 6 nC @ 10 V | 150 pF @ 10 V | ±20V | - | 800mW (Ta) | 300mOhm @ 1A, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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pacote: - |
Estoque504 |
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MOSFET (Metal Oxide) | 40 V | 90A (Ta) | 4.5V, 10V | 2V @ 1mA | 172 nC @ 10 V | 7700 pF @ 10 V | +10V, -20V | - | 180W (Tc) | 4.3mOhm @ 45A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 120A DPAK
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pacote: - |
Estoque8.601 |
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MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 3V @ 500µA | 103 nC @ 10 V | 5500 pF @ 10 V | ±20V | - | 180W (Tc) | 1.9mOhm @ 60A, 6V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 500µA | 44 nC @ 10 V | 2800 pF @ 50 V | ±20V | - | 42W (Tc) | 7.4mOhm @ 25A, 10V | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100A 8SOP
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pacote: - |
Estoque33.024 |
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MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2.1V @ 500µA | 86 nC @ 10 V | 6410 pF @ 15 V | ±20V | - | 830mW (Ta), 116W (Tc) | 2mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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pacote: - |
Estoque150 |
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MOSFET (Metal Oxide) | 650 V | 27.6A (Ta) | 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | 3000 pF @ 300 V | ±30V | - | 230W (Tc) | 110mOhm @ 13.8A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
UMOS10 TO-220AB 80V 7MOHM
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pacote: - |
Estoque360 |
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MOSFET (Metal Oxide) | 80 V | 64A (Tc) | 6V, 10V | 3.5V @ 500µA | 39 nC @ 10 V | 2700 pF @ 40 V | ±20V | - | 87W (Tc) | 7mOhm @ 32A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 45V 120A 8SOP
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pacote: - |
Estoque14.880 |
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MOSFET (Metal Oxide) | 45 V | 120A (Tc) | 4.5V, 10V | 2.4V @ 500µA | 74 nC @ 10 V | 6300 pF @ 22.5 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.4mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A SOT23F
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pacote: - |
Estoque56.208 |
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MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | 630 pF @ 10 V | ±8V | - | 1W (Ta) | 55mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 45V 80A 8TSON
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pacote: - |
Estoque14.634 |
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MOSFET (Metal Oxide) | 45 V | 80A (Tc) | 4.5V, 10V | 2.4V @ 300µA | 39 nC @ 10 V | 3200 pF @ 22.5 V | ±20V | - | 2.67W (Ta), 104W (Tc) | 2.8mOhm @ 40A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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pacote: - |
Estoque414 |
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MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20 nC @ 10 V | 700 pF @ 300 V | ±30V | - | 30W (Tc) | 380mOhm @ 4.9A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -20V -2A SOT346
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pacote: - |
Estoque37.518 |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | +6V, -8V | - | 600mW (Ta) | 150mOhm @ 1A, 4.5V | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
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pacote: - |
Estoque15.486 |
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MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 29.8mOhm @ 3A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 33A DPAK
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pacote: - |
Estoque11.547 |
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MOSFET (Metal Oxide) | 100 V | 33A (Ta) | 4.5V, 10V | 2.5V @ 500µA | 33 nC @ 10 V | 2250 pF @ 10 V | ±20V | - | 125W (Tc) | 9.7mOhm @ 16.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |