Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 48A 8SOP
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pacote: - |
Estoque14.982 |
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MOSFET (Metal Oxide) | 30 V | 48A (Tc) | 4.5V, 10V | 2.1V @ 200µA | 22 nC @ 10 V | 1975 pF @ 15 V | ±20V | - | 830mW (Ta), 69W (Tc) | 4.8mOhm @ 24A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 100A 8SOP
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pacote: - |
Estoque26.406 |
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MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 4.5V, 10V | 2.1V @ 1mA | 230 nC @ 10 V | 9500 pF @ 10 V | +10V, -20V | - | 960mW (Ta), 170W (Tc) | 3.1mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
SMOS LOW RON NCH IO: 0.4A VDSS:
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pacote: - |
Estoque23.565 |
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MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | 40 pF @ 10 V | ±20V | - | 150mW (Ta) | 1.5Ohm @ 100mA, 10V | 150°C | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -60V -2A SOT23F
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pacote: - |
Estoque16.254 |
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MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 2V @ 1mA | 8.3 nC @ 10 V | 330 pF @ 10 V | +10V, -20V | - | 1W (Ta) | 300mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 34A 8SOP
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 34A (Ta) | 4.5V, 10V | 2V @ 500µA | 115 nC @ 10 V | 4800 pF @ 10 V | +20V, -25V | - | 1.6W (Ta), 45W (Tc) | 4.8mOhm @ 17A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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pacote: - |
Estoque129 |
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MOSFET (Metal Oxide) | 900 V | 2.5A (Ta) | 10V | 4V @ 250µA | 15 nC @ 10 V | 650 pF @ 25 V | ±30V | - | 35W (Tc) | 4.6Ohm @ 1.3A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS
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pacote: - |
Estoque2.610 |
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MOSFET (Metal Oxide) | 600 V | 10A (Ta) | 10V | 4V @ 1mA | 30 nC @ 10 V | 1130 pF @ 300 V | ±30V | - | 40W (Tc) | 750mOhm @ 5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
AECQ MOSFET NCH 100V 3.5A SOT323
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pacote: - |
Estoque22.416 |
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MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
100V U-MOS X-H SOP-ADVANCE(N) 3.
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pacote: - |
Estoque15.069 |
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MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 3.5V @ 500µA | 83 nC @ 10 V | 7400 pF @ 50 V | ±20V | - | 210W (Tc) | 3.1mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 24A TO220SIS
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pacote: - |
Estoque126 |
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MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 45W (Tc) | 110mOhm @ 12A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 180MA VESM
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pacote: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 180mA (Ta) | 1.2V, 4V | 1V @ 1mA | - | 9.5 pF @ 3 V | ±10V | - | 150mW (Ta) | 3Ohm @ 50mA, 4V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247 30MO
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pacote: - |
Estoque90 |
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SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 5V @ 13mA | 82 nC @ 18 V | 2925 pF @ 800 V | +25V, -10V | - | 249W (Tc) | 40mOhm @ 30A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 26A 8TSON
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pacote: - |
Estoque30.066 |
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MOSFET (Metal Oxide) | 60 V | 26A (Tc) | 4.5V, 10V | 2.5V @ 200µA | 17 nC @ 10 V | 1625 pF @ 30 V | ±20V | - | 610mW (Ta), 61W (Tc) | 11.4mOhm @ 13A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 1.1A UFM
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pacote: - |
Estoque2.244 |
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MOSFET (Metal Oxide) | 30 V | 1.1A (Ta) | 4V, 10V | 1.8V @ 100µA | - | 86 pF @ 15 V | ±20V | - | 800mW (Ta) | 390mOhm @ 500mA, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
40V U-MOS IX-H L-TOGL 1.0MOHM
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pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 3V @ 500µA | 84 nC @ 10 V | 6890 pF @ 10 V | ±20V | - | 230W (Tc) | 1mOhm @ 100A, 10V | 175°C | Surface Mount | L-TOGL™ | 8-PowerBSFN |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=60
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pacote: - |
Estoque15.354 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.5W (Ta) | 36mOhm @ 5A, 10V | 175°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 40A DPAK
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pacote: - |
Estoque2.010 |
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MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 2.5V @ 200µA | 26 nC @ 10 V | 1650 pF @ 10 V | ±20V | - | 88.2W (Tc) | 10.5mOhm @ 20A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH -60V -3.5A SOT23
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pacote: - |
Estoque20.169 |
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MOSFET (Metal Oxide) | 60 V | 3.5A (Ta) | 4V, 10V | 2V @ 1mA | 15.1 nC @ 10 V | 660 pF @ 10 V | +10V, -20V | - | 1W (Ta) | 134mOhm @ 1A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A 6UDFN
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pacote: - |
Estoque11.775 |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | ±8V | Schottky Diode (Isolated) | 1W (Ta) | 112mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 6-µDFN (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 3.5A (Ta) | 10V | 4V @ 350µA | 13 nC @ 10 V | 450 pF @ 300 V | ±30V | - | 30W (Tc) | 2.2Ohm @ 1.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 650MA SOT23F
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pacote: - |
Estoque156.039 |
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MOSFET (Metal Oxide) | 60 V | 650mA (Ta) | 3V, 5V | 2V @ 1mA | 1.5 nC @ 5 V | 60 pF @ 12 V | ±12V | - | 1W (Ta) | 1.8Ohm @ 150mA, 5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4A UF6
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | ±8V | - | 1W (Ta) | 42.7mOhm @ 3A, 4.5V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 20A DPAK
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pacote: - |
Estoque29.727 |
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MOSFET (Metal Oxide) | 40 V | 20A (Ta) | 6V, 10V | 3V @ 1mA | 37 nC @ 10 V | 1850 pF @ 10 V | +10V, -20V | - | 41W (Tc) | 22.2mOhm @ 10A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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pacote: - |
Estoque63 |
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MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 4.5V @ 790µA | 43 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 130W (Tc) | 230mOhm @ 7.9A, 10V | 150°C | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DTM
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pacote: - |
Estoque7.500 |
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MOSFET (Metal Oxide) | 600 V | 15.8A (Ta) | 10V | 4.5V @ 790µA | 43 nC @ 10 V | 1350 pF @ 300 V | ±30V | - | 139W (Tc) | 245mOhm @ 7.9A, 10V | 150°C | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
650V DTMOS VI TO-220 155MOHM
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pacote: - |
Estoque132 |
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MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 4V @ 730µA | 29 nC @ 10 V | 1635 pF @ 300 V | ±30V | - | 150W (Tc) | 155mOhm @ 9A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2A UFM
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pacote: - |
Estoque43.317 |
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MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 3.3V, 10V | 2V @ 1mA | 6 nC @ 10 V | 150 pF @ 10 V | ±20V | - | 800mW (Ta) | 300mOhm @ 1A, 10V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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pacote: - |
Estoque504 |
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MOSFET (Metal Oxide) | 40 V | 90A (Ta) | 4.5V, 10V | 2V @ 1mA | 172 nC @ 10 V | 7700 pF @ 10 V | +10V, -20V | - | 180W (Tc) | 4.3mOhm @ 45A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |