Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=150W F=1MHZ
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pacote: - |
Estoque11.889 |
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MOSFET (Metal Oxide) | 650 V | 18A (Ta) | 10V | 4V @ 730µA | 29 nC @ 10 V | 1635 pF @ 300 V | ±30V | - | 150W (Tc) | 155mOhm @ 9A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DOS
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pacote: - |
Estoque4.695 |
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MOSFET (Metal Oxide) | 75 V | 150A (Ta) | 10V | 4V @ 1mA | 72 nC @ 10 V | 6000 pF @ 37.5 V | ±20V | - | 800mW (Ta), 142W (Tc) | 2.5mOhm @ 50A, 10V | 150°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK
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pacote: - |
Estoque8.715 |
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MOSFET (Metal Oxide) | 100 V | 7A (Ta) | 10V | 4V @ 100µA | 7.1 nC @ 10 V | 470 pF @ 10 V | ±20V | - | 50W (Tc) | 48mOhm @ 3.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
TJ9A10M3,S4Q
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pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9A (Ta) | 10V | 4V @ 1mA | 47 nC @ 10 V | 2900 pF @ 10 V | ±20V | - | 19W (Tc) | 170mOhm @ 4.5A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS N-CH LOGIC-LEV
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pacote: - |
Estoque17.835 |
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MOSFET (Metal Oxide) | 100 V | 3.5A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | 430 pF @ 15 V | ±20V | - | 1.5W (Ta) | 69mOhm @ 2A, 10V | 175°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
AUTO AEC-Q SS MOS P-CH LOW VOLTA
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pacote: - |
Estoque43.233 |
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MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | 100 pF @ 10 V | +6V, -8V | - | 150mW (Ta) | 390mOhm @ 800mA, 4.5V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 120A 8DSOP
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 3V @ 500µA | 55 nC @ 10 V | 4560 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.14mOhm @ 60A, 10V | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 82A 8SOP
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pacote: - |
Estoque15.465 |
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MOSFET (Metal Oxide) | 40 V | 82A (Tc) | 4.5V, 10V | 2.4V @ 300µA | 47 nC @ 10 V | 3615 pF @ 20 V | ±20V | - | 830mW (Ta), 90W (Tc) | 3.7mOhm @ 41A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
650V DTMOS VI TO-220 110MOHM
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pacote: - |
Estoque318 |
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MOSFET (Metal Oxide) | 650 V | 24A (Ta) | 10V | 4V @ 1.02mA | 40 nC @ 10 V | 2250 pF @ 300 V | ±30V | - | 190W (Tc) | 110mOhm @ 12A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A 6UDFNB
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pacote: - |
Estoque17.535 |
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MOSFET (Metal Oxide) | 30 V | 6A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 2.5 nC @ 4.5 V | 280 pF @ 15 V | +20V, -12V | - | 1.25W (Ta) | 46mOhm @ 4A, 10V | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 800MA VESM
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pacote: - |
Estoque18.804 |
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MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | 100 pF @ 10 V | +6V, -8V | - | 150mW (Ta) | 390mOhm @ 800mA, 4.5V | 150°C | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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pacote: - |
Estoque5.961 |
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MOSFET (Metal Oxide) | 650 V | 5.2A (Ta) | 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | 380 pF @ 300 V | ±30V | - | 60W (Tc) | 1.22Ohm @ 2.6A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
150V U-MOS IX-H SOP-ADVANCE(N) 3
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pacote: - |
Estoque28.071 |
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MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 67 nC @ 10 V | 6300 pF @ 50 V | ±20V | - | 210W (Tc) | 3.7mOhm @ 45A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 12V 4.8A ES6
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pacote: - |
Estoque2.400 |
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MOSFET (Metal Oxide) | 12 V | 4.8A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.7 nC @ 4.5 V | 1040 pF @ 12 V | ±8V | - | 700mW (Ta) | 32mOhm @ 3.5A, 4.5V | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
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pacote: - |
Estoque29.154 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 91 nC @ 10 V | 8100 pF @ 30 V | ±20V | - | 960mW (Ta), 210W (Tc) | 1.34mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DSO
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pacote: - |
Estoque14.466 |
|
MOSFET (Metal Oxide) | 250 V | 26A (Tc) | 10V | 4V @ 1mA | 22 nC @ 10 V | 2200 pF @ 100 V | ±20V | - | 800mW (Ta), 142W (Tc) | 52mOhm @ 13A, 10V | 150°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
SMOS P-CH VDSS:-20V VGSS:-8/+6V
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pacote: - |
Estoque13.038 |
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MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 103mOhm @ 1A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A DPAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25 nC @ 10 V | 890 pF @ 300 V | ±30V | - | 100W (Tc) | 340mOhm @ 5.8A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A 8SOP
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pacote: - |
Estoque58.608 |
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MOSFET (Metal Oxide) | 60 V | 70A (Ta) | - | 2.5V @ 500µA | 65 nC @ 10 V | 4180 pF @ 10 V | ±20V | - | 960mW (Ta), 132W (Tc) | 3.2mOhm @ 35A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
N-CH MOSFET 20V, +/-8V, 6A ,0.03
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pacote: - |
Estoque17.880 |
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MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | 410 pF @ 10 V | ±8V | - | 1.5W (Ta) | 33mOhm @ 4A, 4.5V | 150°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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pacote: - |
Estoque4.905 |
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MOSFET (Metal Oxide) | 500 V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20 nC @ 10 V | 700 pF @ 300 V | ±30V | - | 80W (Tc) | 430mOhm @ 4.9A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8SOP
|
pacote: - |
Estoque92.856 |
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MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 6V, 10V | 3V @ 500µA | 62 nC @ 10 V | 5855 pF @ 20 V | ±20V | - | 960mW (Ta), 132W (Tc) | 1.2mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247 15MO
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pacote: - |
Estoque81 |
|
SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 5V @ 11.7mA | 158 nC @ 18 V | 6000 pF @ 800 V | +25V, -10V | - | 431W (Tc) | 20mOhm @ 50A, 18V | 175°C | Through Hole | TO-247 | TO-247-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.5A UF6
|
pacote: - |
Estoque7.923 |
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MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4V, 10V | 2.6V @ 1mA | 16 nC @ 10 V | 730 pF @ 15 V | ±20V | - | 500mW (Ta) | 73mOhm @ 2A, 10V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A UFM
|
pacote: - |
Estoque43.884 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.8W (Ta) | 36mOhm @ 4A, 10V | 175°C | Surface Mount | UFM | 3-SMD, Flat Lead |
||
Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=230W F=1MHZ
|
pacote: - |
Estoque6.354 |
|
MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 4V @ 1.27mA | 47 nC @ 10 V | 2780 pF @ 300 V | ±30V | - | 230W (Tc) | 90mOhm @ 15A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
pacote: - |
Estoque219 |
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MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | 4V @ 190µA | 8 nC @ 10 V | 270 pF @ 300 V | ±30V | - | 30W (Tc) | 4.1Ohm @ 1A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 100MA SSM
|
pacote: - |
Estoque69.102 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | - | 8.5 pF @ 3 V | ±20V | - | 150mW (Ta) | 4Ohm @ 10mA, 4V | 150°C | Surface Mount | SSM | SC-75, SOT-416 |