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Infineon Technologies |
IGBT 600V FULLPAK220 COPAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 7A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: 62µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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pacote: TO-220-3 Full Pack |
Estoque6.880 |
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Infineon Technologies |
DIODE 600V 40A D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 65A
- Current - Collector Pulsed (Icm): 72A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
- Power - Max: 250W
- Switching Energy: 115µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 75nC
- Td (on/off) @ 25°C: 41ns/104ns
- Test Condition: 400V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 89ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque7.664 |
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Infineon Technologies |
IGBT 1200V 11A 60W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 11A
- Current - Collector Pulsed (Icm): 22A
- Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
- Power - Max: 60W
- Switching Energy: 450µJ (on), 440µJ (off)
- Input Type: Standard
- Gate Charge: 28nC
- Td (on/off) @ 25°C: 23ns/93ns
- Test Condition: 960V, 5A, 50 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque5.648 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque110.028 |
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Infineon Technologies |
MOSFET N-CH 100V 57A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 28A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque2.016 |
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Infineon Technologies |
MOSFET N-CHANNEL_100+
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacote: - |
Estoque2.544 |
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Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 42A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.592 |
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Infineon Technologies |
MOSFET N-CH 25V 19A 8PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1667pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 34W (Tc)
- Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3), Power33
- Package / Case: 8-PowerTDFN
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pacote: 8-PowerTDFN |
Estoque4.608 |
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Infineon Technologies |
MOSFET N-CH 650V 6A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 1.7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque20.064 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3-1
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 53µA
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5260pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque8.760 |
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Infineon Technologies |
MOSFET N-CH 25V 100A PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
- Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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pacote: 8-PowerTDFN |
Estoque6.544 |
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Infineon Technologies |
IC REG LIN 2.5V 800MA 2-UTHINPAK
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.3V @ 1A
- Current - Output: 800mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 2-Ultra Thin-Pak
- Supplier Device Package: 2-Ultra Thin-Pak
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pacote: 2-Ultra Thin-Pak |
Estoque4.176 |
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Infineon Technologies |
IC REG LINEAR 5V 400MA TO263-3
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 250mA
- Current - Output: 400mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 220µA ~ 30mA
- PSRR: 60dB (100Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Supplier Device Package: PG-TO263-3
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pacote: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Estoque13.386 |
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Infineon Technologies |
IC SWITCH HISIDE 8CH DSO-36
- Switch Type: Relay, Solenoid Driver
- Number of Outputs: 8
- Ratio - Input:Output: 1:8
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: SPI
- Voltage - Load: 11 V ~ 35 V
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Current - Output (Max): 625mA
- Rds On (Typ): 150 mOhm
- Input Type: -
- Features: Auto Restart, Galvanic Isolation, Status Flag
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -25°C ~ 125°C (TJ)
- Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36
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pacote: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad |
Estoque19.848 |
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Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 16SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 6V, 9.5V
- Current - Peak Output (Source, Sink): 250mA, 500mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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pacote: 16-SOIC (0.295", 7.50mm Width) |
Estoque403.908 |
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Infineon Technologies |
IC OFFLINE CTRLR SMPS CM TO220
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 15V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 100kHz
- Power (Watts): 128W
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: TO-220-6 Formed Leads
- Supplier Device Package: PG-TO220-6
- Mounting Type: Through Hole
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pacote: TO-220-6 Formed Leads |
Estoque3.984 |
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Infineon Technologies |
IC MCU 32BIT 64KB FLASH 38TSSOP
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 26
- Program Memory Size: 64KB (64K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 38-TFSOP (0.173", 4.40mm Width)
- Supplier Device Package: 38-TSSOP
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pacote: 38-TFSOP (0.173", 4.40mm Width) |
Estoque4.400 |
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Infineon Technologies |
MAGNETIC SWITCH LATCH SOT23-3
- Function: Latch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 7.3mT Trip, -7.3mT Release
- Test Condition: 25°C
- Voltage - Supply: 3 V ~ 5.5 V
- Current - Supply (Max): 2.5mA
- Current - Output (Max): 5mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 170°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-15
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque3.418 |
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Infineon Technologies |
IC PSRAM 64MBIT SPI/OCTAL 24FBGA
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 64Mbit
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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pacote: - |
Request a Quote |
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Infineon Technologies |
MOSFET_(75V 120V( PG-TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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pacote: - |
Estoque11.232 |
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Infineon Technologies |
IGBT MOD 1200V 20A 20MW
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 20 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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pacote: - |
Estoque45 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 80WLCSP
- Core Processor: ARM® Cortex®-M4
- Core Size: 32-Bit Single-Core
- Speed: 50MHz
- Connectivity: I2C, LINbus, QSPI, SPI, UART/USART, USB
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, POR, PWM, WDT
- Number of I/O: 62
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 32K x 8
- RAM Size: 288K x 8
- Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
- Data Converters: A/D 16x12b SAR; D/A 2x7b, 1x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 80-XFBGA, WLCSP
- Supplier Device Package: 80-WLCSP (3.68x3.19)
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pacote: - |
Request a Quote |
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Infineon Technologies |
HYPERFLASH
- Memory Type: Non-Volatile
- Memory Format: FLASH
- Technology: FLASH - NOR (SLC)
- Memory Size: 512Mbit
- Memory Interface: HyperBus
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 96 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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pacote: - |
Request a Quote |
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Infineon Technologies |
IC REGULATOR 30TSSOP
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Request a Quote |
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Infineon Technologies |
IGBT 1200V 50A DIE
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 50A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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pacote: - |
Request a Quote |
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Infineon Technologies |
SCR MODULE 1.2KV 160A MODULE
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.2 kV
- Current - On State (It (AV)) (Max): 104 A
- Current - On State (It (RMS)) (Max): 160 A
- Voltage - Gate Trigger (Vgt) (Max): 1.4 V
- Current - Gate Trigger (Igt) (Max): 120 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 130°C
- Mounting Type: Chassis Mount
- Package / Case: Module
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pacote: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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pacote: - |
Estoque28.404 |
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Infineon Technologies |
IC MCU 32B 1.03125MB FLSH 120QFP
- Core Processor: ARM® Cortex®-M4F
- Core Size: 32-Bit Single-Core
- Speed: 160MHz
- Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 100
- Program Memory Size: 1.03125MB (1.03125M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 128K x 8
- Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
- Data Converters: A/D 24x12b SAR; D/A 2x12b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 120-LQFP
- Supplier Device Package: 120-LQFP (16x16)
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pacote: - |
Estoque2.490 |
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Infineon Technologies |
ACG1F
- Applications: USB Type C
- Core Processor: ARM® Cortex®-M0
- Program Memory Type: FLASH (16kB), ROM (32kB)
- Controller Series: -
- RAM Size: 4K x 8
- Interface: I2C, USB
- Number of I/O: 8
- Voltage - Supply: 2.7V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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pacote: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 48MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, POR, PWM, WDT
- Number of I/O: 84
- Program Memory Size: 384KB (384K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 32K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-TQFP (14x14)
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