|
|
Infineon Technologies |
IGBT 600V 13A 60W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 13A
- Current - Collector Pulsed (Icm): 52A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
- Power - Max: 60W
- Switching Energy: 160µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 39ns/93ns
- Test Condition: 480V, 6.5A, 50 Ohm, 15V
- Reverse Recovery Time (trr): 37ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Em estoque248 |
|
|
|
Infineon Technologies |
IGBT 600V 85A 350W SUPER247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 85A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 350W
- Switching Energy: 420µJ (on), 1.99mJ (off)
- Input Type: Standard
- Gate Charge: 340nC
- Td (on/off) @ 25°C: 34ns/56ns
- Test Condition: 480V, 60A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247 (TO-274AA)
|
pacote: TO-274AA |
Em estoque14.600 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 147A 2WDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M?
- Package / Case: 3-WDSON
|
pacote: 3-WDSON |
Em estoque399 |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
- Vgs(th) (Max) @ Id: 700mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Em estoque188 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V TO247-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 850µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 171W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
|
pacote: TO-247-4 |
Em estoque211 |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V BARE DIE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 260µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: Sawn on foil
- Package / Case: Die
|
pacote: Die |
Em estoque193 |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 99A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 62A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Em estoque315 |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 4.2A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Em estoque150 |
|
|
|
Infineon Technologies |
MOSFET N-CH 25V 34A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
|
pacote: DirectFET? Isometric MX |
Em estoque52.788 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS 220W H-37260-2
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 30V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.85A
- Power - Output: 220W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37260-2
|
pacote: 2-Flatpack, Fin Leads, Flanged |
Em estoque475 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS 55W H-37265-2
- Transistor Type: LDMOS
- Frequency: 960MHz
- Gain: 18.5dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 600mA
- Power - Output: 55W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-37265-2
|
pacote: 2-Flatpack, Fin Leads, Flanged |
Em estoque163 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 4.6A 8-TSSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.6A
- Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
|
pacote: 8-TSSOP (0.173", 4.40mm Width) |
Em estoque298 |
|
|
|
Infineon Technologies |
TRANS PREBIAS NPN 250MW SOT323-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 10k
- Resistor - Emitter Base (R2) (Ohms): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
|
pacote: SC-70, SOT-323 |
Em estoque410 |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247-3
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 30A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 1.1mA @ 650V
- Capacitance @ Vr, F: 860pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
- Operating Temperature - Junction: -55°C ~ 175°C
|
pacote: TO-247-3 |
Em estoque397 |
|
|
|
Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT323
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 150nA @ 70V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
|
pacote: SC-70, SOT-323 |
Em estoque402 |
|
|
|
Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT343
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
|
pacote: SC-82A, SOT-343 |
Em estoque258 |
|
|
|
Infineon Technologies |
IC SYSTEM BASIS CHIP DSO-36
- Type: Transceiver
- Applications: Automotive
- Mounting Type: Surface Mount
- Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
- Supplier Device Package: PG-DSO-36
|
pacote: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad |
Em estoque130 |
|
|
|
Infineon Technologies |
IC REG CTRLR BUCK
- Output Type: Transistor Driver
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Number of Outputs: 1
- Output Phases: 1
- Voltage - Supply (Vcc/Vdd): 4.75 V ~ 45 V
- Frequency - Switching: 100kHz ~ 700kHz
- Duty Cycle (Max): -
- Synchronous Rectifier: Yes
- Clock Sync: Yes
- Serial Interfaces: -
- Control Features: Enable, Frequency Control
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-SSOP-14
|
pacote: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad |
Em estoque165 |
|
|
|
Infineon Technologies |
IC MOTOR DRIVER PAR TO263-7
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge
- Interface: Parallel
- Technology: Power MOSFET
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 32A
- Voltage - Supply: 8 V ~ 18 V
- Voltage - Load: 8 V ~ 18 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: PG-TO263-7
|
pacote: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Em estoque368 |
|
|
|
Infineon Technologies |
IC OFFLINE CTRLR SMPS CM TO220
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 13.5V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 67kHz
- Power (Watts): 240W
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-220-6 Formed Leads
- Supplier Device Package: PG-TO220-6
- Mounting Type: Through Hole
|
pacote: TO-220-6 Formed Leads |
Em estoque155 |
|
|
|
Infineon Technologies |
IC OFFLINE CTRLR SMPS OTP 8DIP
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 18V
- Voltage - Supply (Vcc/Vdd): 10.3 V ~ 26 V
- Duty Cycle: 75%
- Frequency - Switching: 67kHz
- Power (Watts): 42W
- Fault Protection: Current Limiting, Open Circuit, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
- Mounting Type: Through Hole
|
pacote: 8-DIP (0.300", 7.62mm) |
Em estoque355 |
|
|
|
Infineon Technologies |
IC CHIPSET 8 E1/T1 LINE 256-BGA
- Applications: -
- Interface: -
- Voltage - Supply: 3.15 V ~ 3.45 V
- Package / Case: 256-BGA
- Supplier Device Package: 256-BGA (27x27)
- Mounting Type: Surface Mount
|
pacote: 256-BGA |
Em estoque394 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 192KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 40MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 38
- Program Memory Size: 192KB (192K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 26K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 9x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-64-6
|
pacote: 64-LQFP Exposed Pad |
Em estoque112 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 128KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 18K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-8
|
pacote: 100-LQFP Exposed Pad |
Em estoque381 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 128KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 20MHz
- Connectivity: SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 47
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 8K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 14x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
|
pacote: 64-LQFP |
Em estoque192 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 768KB FLASH 100LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 75
- Program Memory Size: 768KB (768K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 82K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: 100-LQFP (14x14)
|
pacote: 100-LQFP Exposed Pad |
Em estoque391 |
|
|
|
Infineon Technologies |
IC AMP MMIC 12ATSLP
- Frequency: 700MHz ~ 1GHz
- P1dB: -11dBm
- Gain: 17.5dB
- Noise Figure: 1.1dB
- RF Type: LTE, W-CDMA
- Voltage - Supply: 2.2 V ~ 3.3 V
- Current - Supply: 4.9mA
- Test Frequency: -
- Package / Case: 12-UFQFN Exposed Pad
- Supplier Device Package: ATSLP-12-3
|
pacote: 12-UFQFN Exposed Pad |
Em estoque6.260 |
|
|
|
Infineon Technologies |
IC SWITCH HISIDE SMART DSO-20
- Switch Type: General Purpose
- Number of Outputs: 4
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 5.5 V ~ 40 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3A
- Rds On (Typ): 70 mOhm
- Input Type: Non-Inverting
- Features: Status Flag
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
- Operating Temperature: -30°C ~ 85°C (TA)
- Package / Case: 20-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: PG-DSO-20
|
pacote: 20-SOIC (0.295", 7.50mm Width) |
Em estoque2.417 |
|
|
|
Infineon Technologies |
IC MCU 16BIT 80MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: 80-MQFP
|
pacote: - |
Em estoque153 |
|
|
|
Infineon Technologies |
XMC1000
- Core Processor: ARM® Cortex®-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I²C, LINbus, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
- Number of I/O: 18
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: FLASH
- EEPROM Size: 8K x 8
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
- Data Converters: A/D 8x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VQFN Exposed Pad
- Supplier Device Package: PG-VQFN-24-19
|
pacote: 24-VQFN Exposed Pad |
Em estoque406 |
|