Infineon Technologies Produtos

IGBT 600V 13A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: 160µJ (on), 130µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 39ns/93ns
• Test Condition: 480V, 6.5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

IGBT 600V 85A 350W SUPER247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
• Power - Max: 350W
• Switching Energy: 420µJ (on), 1.99mJ (off)
• Input Type: Standard
• Gate Charge: 340nC
• Td (on/off) @ 25°C: 34ns/56ns
• Test Condition: 480V, 60A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-274AA
• Supplier Device Package: SUPER-247 (TO-274AA)

MOSFET N-CH 30V 147A 2WDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-2, CanPAK M?
• Package / Case: 3-WDSON

MOSFET N-CH 20V 110A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MOSFET N-CH 650V TO247-4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 850µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 171W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4
• Package / Case: TO-247-4

MOSFET N-CH 200V BARE DIE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 260µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Sawn on foil
• Package / Case: Die

MOSFET N-CH 150V 99A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 62A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MOSFET P-CH 100V 4.2A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 380µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 38W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

MOSFET N-CH 25V 34A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 59nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 13V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 34A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

IC FET RF LDMOS 220W H-37260-2

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 18.5dB
• Voltage - Test: 30V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 1.85A
• Power - Output: 220W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37260-2

IC FET RF LDMOS 55W H-37265-2

• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 18.5dB
• Voltage - Test: 28V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 600mA
• Power - Output: 55W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37265-2

MOSFET 2N-CH 30V 4.6A 8-TSSOP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.6A
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
• Power - Max: 1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP

TRANS PREBIAS NPN 250MW SOT323-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

DIODE SCHOTTKY 650V 30A TO247-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 30A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 1.1mA @ 650V
• Capacitance @ Vr, F: 860pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE ARRAY GP 80V 200MA SOT323

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 150nA @ 70V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

DIODE ARRAY GP 80V 200MA SOT343

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100nA @ 75V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

IC SYSTEM BASIS CHIP DSO-36

• Type: Transceiver
• Applications: Automotive
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

IC REG CTRLR BUCK

• Output Type: Transistor Driver
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 4.75 V ~ 45 V
• Frequency - Switching: 100kHz ~ 700kHz
• Duty Cycle (Max): -
• Synchronous Rectifier: Yes
• Clock Sync: Yes
• Serial Interfaces: -
• Control Features: Enable, Frequency Control
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-14

IC MOTOR DRIVER PAR TO263-7

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 32A
• Voltage - Supply: 8 V ~ 18 V
• Voltage - Load: 8 V ~ 18 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO263-7

IC OFFLINE CTRLR SMPS CM TO220

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 13.5V
• Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
• Duty Cycle: 72%
• Frequency - Switching: 67kHz
• Power (Watts): 240W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-220-6 Formed Leads
• Supplier Device Package: PG-TO220-6
• Mounting Type: Through Hole

IC OFFLINE CTRLR SMPS OTP 8DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.3 V ~ 26 V
• Duty Cycle: 75%
• Frequency - Switching: 67kHz
• Power (Watts): 42W
• Fault Protection: Current Limiting, Open Circuit, Over Load, Over Temperature, Over Voltage
• Control Features: Soft Start
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8
• Mounting Type: Through Hole

IC CHIPSET 8 E1/T1 LINE 256-BGA

• Applications: -
• Interface: -
• Voltage - Supply: 3.15 V ~ 3.45 V
• Package / Case: 256-BGA
• Supplier Device Package: 256-BGA (27x27)
• Mounting Type: Surface Mount

IC MCU 16BIT 192KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 192KB (192K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 26K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-64-6

IC MCU 16BIT 128KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 18K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-8

IC MCU 16BIT 128KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SPI, UART/USART
• Peripherals: PWM, WDT
• Number of I/O: 47
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
• Data Converters: A/D 14x8/10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

IC MCU 16BIT 768KB FLASH 100LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 75
• Program Memory Size: 768KB (768K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 82K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: 100-LQFP (14x14)

IC AMP MMIC 12ATSLP

• Frequency: 700MHz ~ 1GHz
• P1dB: -11dBm
• Gain: 17.5dB
• Noise Figure: 1.1dB
• RF Type: LTE, W-CDMA
• Voltage - Supply: 2.2 V ~ 3.3 V
• Current - Supply: 4.9mA
• Test Frequency: -
• Package / Case: 12-UFQFN Exposed Pad
• Supplier Device Package: ATSLP-12-3

IC SWITCH HISIDE SMART DSO-20

• Switch Type: General Purpose
• Number of Outputs: 4
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 40 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 70 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -30°C ~ 85°C (TA)
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-20

IC MCU 16BIT 80MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: 80-MQFP

XMC1000

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I²C, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
• Number of I/O: 18
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 8K x 8
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VQFN Exposed Pad
• Supplier Device Package: PG-VQFN-24-19