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Infineon Technologies |
IGBT 1200V 40A 310W TO247HC-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
- Power - Max: 310W
- Switching Energy: 950µJ (off)
- Input Type: Standard
- Gate Charge: 211nC
- Td (on/off) @ 25°C: -/387ns
- Test Condition: 600V, 20A, 15 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PG-TO247HC-3
|
pacote: TO-247-3 Variant |
Estoque3.504 |
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Infineon Technologies |
IGBT 1200V 100A 420W TO-247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 100A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 420W
- Switching Energy: 2.8mJ (on), 2.3mJ (off)
- Input Type: Standard
- Gate Charge: 345nC
- Td (on/off) @ 25°C: 40ns/240ns
- Test Condition: 600V, 40A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 210ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
|
pacote: TO-247-3 |
Estoque6.256 |
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Infineon Technologies |
IGBT 600V 40A 160W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
- Power - Max: 160W
- Switching Energy: 110µJ (on), 230µJ (off)
- Input Type: Standard
- Gate Charge: 98nC
- Td (on/off) @ 25°C: 27ns/100ns
- Test Condition: 480V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque5.776 |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 45µA
- Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
pacote: TO-220-3 |
Estoque4.000 |
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Infineon Technologies |
MOSFET N-CH 75V 160A D2PAK-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
|
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Estoque66.000 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13060pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 69A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.944 |
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Infineon Technologies |
MOSFET P-CH 55V 41A TO-220FP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 22A, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
|
pacote: TO-220-3 Full Pack |
Estoque12.132 |
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Infineon Technologies |
MOSFET P-CH TO220-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5430pF @ 25V
- Vgs (Max): +5V, -16V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
|
pacote: TO-220-3 |
Estoque3.296 |
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Infineon Technologies |
MOSFET N-CH 500V 2.4A PG-TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Vgs(th) (Max) @ Id: 3.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 124pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 600mA, 13V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.856 |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 275µA
- Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab)
|
pacote: TO-263-7, D2Pak (6 Leads + Tab) |
Estoque3.824 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.912 |
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Infineon Technologies |
MOSFET P-CH 30V 20A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque334.548 |
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Infineon Technologies |
MOSFET N-CH 30V 116A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque106.968 |
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Infineon Technologies |
MOSFET N-CH 75V 100A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque22.416 |
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Infineon Technologies |
FET RF 65V 2.14GHZ H-36260-2
- Transistor Type: LDMOS
- Frequency: 2.14GHz
- Gain: 15.5dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.2A
- Power - Output: 35W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-36260-2
|
pacote: 2-Flatpack, Fin Leads |
Estoque2.528 |
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Infineon Technologies |
MOSFET N/P-CH 100V 2.1A 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
- Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque263.940 |
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Infineon Technologies |
TRANS PNP 300V 0.5A SOT-23
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
- Power - Max: 360mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque4.752 |
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Infineon Technologies |
TRANS NPN 45V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque3.728 |
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|
Infineon Technologies |
IC REG CTRLR DL BUCK PWM 40QFN
- Applications: Controller, GDDR, GPU
- Voltage - Input: 2.805 V ~ 3.63 V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: 0°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
|
pacote: 40-VFQFN Exposed Pad |
Estoque6.112 |
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Infineon Technologies |
IC REG LINEAR POS ADJ 5A TO263
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 7V
- Voltage - Output (Min/Fixed): 2.5V
- Voltage - Output (Max): 3.3V
- Voltage Dropout (Max): 1.3V @ 5A
- Current - Output: 5A
- Current - Quiescent (Iq): -
- Current - Supply (Max): 10mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature
- Operating Temperature: 0°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
- Supplier Device Package: TO-263
|
pacote: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
Estoque5.184 |
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Infineon Technologies |
IC REG BUCK ADJ 4A SYNC PQFN17
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 1.5V
- Voltage - Input (Max): 21V
- Voltage - Output (Min/Fixed): 0.7V
- Voltage - Output (Max): 18.9V
- Current - Output: 4A
- Frequency - Switching: 225kHz ~ 1.65MHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 17-PowerVQFN
- Supplier Device Package: 17-PQFN (4x5)
|
pacote: 17-PowerVQFN |
Estoque7.616 |
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Infineon Technologies |
IC OFFLINE CTRLR SMPS OTP TO220
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 15V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 67kHz
- Power (Watts): 128W
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: TO-220-6 Formed Leads
- Supplier Device Package: PG-TO220-6
- Mounting Type: Through Hole
|
pacote: TO-220-6 Formed Leads |
Estoque3.600 |
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Infineon Technologies |
IC MCU 8BIT 52KB FLASH 64LQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: SSC, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 40
- Program Memory Size: 52KB (52K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 3.25K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-LQFP (10x10)
|
pacote: 64-LQFP |
Estoque5.472 |
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Infineon Technologies |
IC MCU 16BIT 576KB FLASH 144LQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 66MHz
- Connectivity: EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 118
- Program Memory Size: 576KB (576K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 50K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 16x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: 144-LQFP (20x20)
|
pacote: 144-LQFP Exposed Pad |
Estoque7.344 |
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Infineon Technologies |
IC ANLG BAROMETRIC SNSR DSOF8
- Pressure Type: -
- Operating Pressure: -
- Output Type: -
- Output: -
- Accuracy: -
- Voltage - Supply: -
- Port Size: -
- Port Style: -
- Features: -
- Termination Style: -
- Maximum Pressure: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
|
pacote: - |
Estoque8.226 |
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|
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Infineon Technologies |
IC HALL EFFECT UNIPOLAR SOT23-3
- Function: -
- Technology: -
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
|
pacote: - |
Estoque3.186 |
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|
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Infineon Technologies |
IC RELAY PHOTOVO 250V 170MA 8SMD
- Circuit: DPST (2 Form A)
- Output Type: AC, DC
- On-State Resistance (Max): 10 Ohm
- Load Current: 170mA
- Voltage - Input: 1.2VDC
- Voltage - Load: 0 ~ 250 V
- Mounting Type: Surface Mount
- Termination Style: Gull Wing
- Package / Case: 8-SMD (0.300", 7.62mm)
- Supplier Device Package: 8-SMT
- Relay Type: Relay
|
pacote: 8-SMD (0.300", 7.62mm) |
Estoque247.836 |
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|
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Infineon Technologies |
IC REG DC-DC 15A 34IQFN
- Function: -
- Output Configuration: -
- Topology: -
- Output Type: -
- Number of Outputs: -
- Voltage - Input (Min): -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Current - Output: -
- Frequency - Switching: -
- Synchronous Rectifier: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 34-PowerVFQFN
- Supplier Device Package: 34-PQFN (5x7)
|
pacote: 34-PowerVFQFN |
Estoque5.920 |
|
|
|
Infineon Technologies |
IC SWITCH HISIDE SMART SOT223-4
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 12 V ~ 45 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 700mA
- Rds On (Typ): 150 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -30°C ~ 85°C (TA)
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
|
pacote: TO-261-4, TO-261AA |
Estoque7.008 |
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|
|
Infineon Technologies |
IC REG BUCK 48VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque72.000 |
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