Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque4.176 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 120µA | 160nC @ 10V | 13150pF @ 25V | ±20V | - | 167W (Tc) | 3.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 20V 67A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque7.552 |
|
MOSFET (Metal Oxide) | 20V | 67A (Tc) | 4.5V, 10V | 2.55V @ 250µA | 13nC @ 4.5V | 1220pF @ 10V | ±20V | - | 57W (Tc) | 7.9 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 30A I-PAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque19.632 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 250µA | 27nC @ 10V | 740pF @ 25V | ±20V | - | 48W (Tc) | 24.5 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
IXYS |
MOSFET N-CH 100V 110A PLUS220
|
pacote: TO-220-3, Short Tab |
Estoque5.360 |
|
MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 5V @ 4mA | 110nC @ 10V | 3550pF @ 25V | ±20V | - | 480W (Tc) | 15 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 4.5A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque4.704 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 700pF @ 25V | ±30V | - | 2.5W (Ta), 61W (Tc) | 1.2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 16A TO-3P
|
pacote: TO-3P-3, SC-65-3 |
Estoque6.624 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 5V @ 250µA | 70nC @ 10V | 2250pF @ 25V | ±30V | - | 167W (Tc) | 260 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Infineon Technologies |
TRANSISTOR N-CH
|
pacote: - |
Estoque3.232 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 60V 173A TO262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque6.912 |
|
MOSFET (Metal Oxide) | 60V | 173A (Tc) | 6V, 10V | 3.7V @ 150µA | 210nC @ 10V | 7020pF @ 25V | ±20V | - | 230W (Tc) | 3.3 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque7.472 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 148nC @ 10V | 4400pF @ 25V | ±20V | - | 300W (Tc) | 3.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 650V 4.3A TO-251-3
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque6.352 |
|
MOSFET (Metal Oxide) | 650V | 4.3A (Tc) | 10V | 3.5V @ 200µA | 15.3nC @ 10V | 328pF @ 100V | ±20V | - | 37W (Tc) | 1 Ohm @ 1.5A, 10V | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
||
Renesas Electronics America |
MOSFET N-CH 1500V 2.5A TO-3P
|
pacote: TO-3P-3, SC-65-3 |
Estoque15.804 |
|
MOSFET (Metal Oxide) | 1500V | 2.5A (Ta) | 15V | - | - | 990pF @ 10V | ±20V | - | 100W (Tc) | 12 Ohm @ 2A, 15V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
IXYS |
MOSFET N-CH 75V 120A TO-220
|
pacote: TO-220-3 |
Estoque7.600 |
|
MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 4740pF @ 25V | ±20V | - | 250W (Tc) | 7.7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 25V 37A SO8FL
|
pacote: 8-PowerTDFN |
Estoque2.096 |
|
MOSFET (Metal Oxide) | 25V | 37A (Ta), 193A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 38.5nC @ 10V | 2651pF @ 12V | ±20V | - | 3.13W (Ta), 83W (Tc) | 1.4 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 200V 3.3A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.960 |
|
MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 3W (Ta), 36W (Tc) | 1.5 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N CH 80V 10.7A 8-MLP
|
pacote: 8-PowerWDFN |
Estoque3.360 |
|
MOSFET (Metal Oxide) | 80V | 10.7A (Ta), 22A (Tc) | 8V, 10V | 4.5V @ 250µA | 41nC @ 10V | 2640pF @ 40V | ±20V | - | 2.3W (Ta), 40W (Tc) | 11.7 mOhm @ 10.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3), Power33 | 8-PowerWDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 33V 80A TO220
|
pacote: TO-220-3 |
Estoque168.600 |
|
MOSFET (Metal Oxide) | 33V | 80A (Tc) | 10V | 3V @ 250µA | 89nC @ 10V | 5500pF @ 15V | - | - | 115W (Tc) | 5.3 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 2.5A TO252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.872 |
|
MOSFET (Metal Oxide) | 600V | 2.5A (Tc) | 10V | 5V @ 250µA | 10nC @ 10V | 466pF @ 100V | ±30V | - | 74W (Tc) | 2 Ohm @ 800mA, 10V | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -20V,
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque7.024 |
|
MOSFET (Metal Oxide) | 20V | 2.8A (Tc) | 1.8V, 4.5V | 950mV @ 250µA | 4.5nC @ 4.5V | 415pF @ 6V | ±8V | - | 900mW (Ta) | 100 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 150V 1A 6-MLP
|
pacote: 6-WDFN Exposed Pad |
Estoque3.296 |
|
MOSFET (Metal Oxide) | 150V | 1A (Ta) | 6V, 10V | 4V @ 250µA | 4nC @ 10V | 210pF @ 75V | ±25V | - | 2.4W (Ta) | 1.2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 200V 11.5A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque17.772 |
|
MOSFET (Metal Oxide) | 200V | 11.5A (Tc) | 10V | 5V @ 250µA | 40nC @ 10V | 1200pF @ 25V | ±30V | - | 3.13W (Ta), 120W (Tc) | 470 mOhm @ 5.75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 620V 4.2A TO220FP
|
pacote: TO-220-3 Full Pack |
Estoque23.592 |
|
MOSFET (Metal Oxide) | 620V | 4.2A (Tc) | 10V | 4.5V @ 50µA | 26nC @ 10V | 680pF @ 50V | ±30V | - | 25W (Tc) | 1.6 Ohm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET N-CH 40V 75A TO220AB
|
pacote: TO-220-5 |
Estoque33.804 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 84nC @ 10V | 3140pF @ 25V | ±20V | Current Sensing | 221W (Tc) | 8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
Nexperia USA Inc. |
MOSFET N-CH 75V 53A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque34.752 |
|
MOSFET (Metal Oxide) | 75V | 53A (Tc) | 10V | 4V @ 1mA | - | 2385pF @ 25V | ±20V | - | 138W (Tc) | 23 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 500V 11A TO-220FP
|
pacote: TO-220-3 Full Pack |
Estoque14.478 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 5V @ 250µA | 30nC @ 10V | 850pF @ 50V | ±25V | - | 25W (Tc) | 380 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 500V 3.3A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.000 |
|
MOSFET (Metal Oxide) | 500V | 3.3A (Tc) | 10V | 4.5V @ 250µA | 17nC @ 10V | 340pF @ 25V | ±30V | - | 83W (Tc) | 3 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 61A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque144.060 |
|
MOSFET (Metal Oxide) | 30V | 61A (Tc) | 2.8V, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | ±12V | - | 87W (Tc) | 12.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 75V 240A POWERSO-10
|
pacote: PowerSO-10 Exposed Bottom Pad |
Estoque7.648 |
|
MOSFET (Metal Oxide) | 75V | 240A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 6800pF @ 25V | ±20V | - | 300W (Tc) | 2.6 mOhm @ 120A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
||
Infineon Technologies |
MOSFET N-CH 60V 100A TDSON-8
|
pacote: 8-PowerTDFN |
Estoque98.790 |
|
MOSFET (Metal Oxide) | 60V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 2.2V @ 93µA | 175nC @ 10V | 13000pF @ 30V | ±20V | - | 2.5W (Ta), 139W (Tc) | 2.8 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.25A VESM
|
pacote: SOT-723 |
Estoque342.000 |
|
MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.5V, 4.5V | 1V @ 1mA | - | 12pF @ 10V | ±10V | - | 150mW (Ta) | 2.2 Ohm @ 100mA, 4.5V | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
||
Diodes Incorporated |
MOSFET P-CH 20V 3.6A SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque1.714.020 |
|
MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 15.4nC @ 4.5V | 1610pF @ 10V | ±8V | - | 810mW (Ta) | 35 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |