Página 665 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  665/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot AO4446
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 8SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque44.112
MOSFET (Metal Oxide)
30V
15A (Ta)
4.5V, 10V
3V @ 250µA
40nC @ 10V
-
±20V
-
3W (Ta)
8.5 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
AOU2N60_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 2A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque3.920
MOSFET (Metal Oxide)
600V
2A (Tc)
10V
4.5V @ 250µA
11nC @ 10V
325pF @ 25V
±30V
-
56.8W (Tc)
4.4 Ohm @ 1A, 10V
-50°C ~ 150°C (TJ)
Through Hole
TO-251-3
TO-251-3 Short Leads, IPak, TO-251AA
NP80N04PLG-E1B-AY
Renesas Electronics America

MOSFET N-CH 40V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque6.192
MOSFET (Metal Oxide)
40V
80A (Tc)
4.5V, 10V
2.5V @ 250µA
135nC @ 10V
6900pF @ 25V
±20V
-
1.8W (Ta), 115W (Tc)
4.5 mOhm @ 40A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFD9210
Vishay Siliconix

MOSFET P-CH 200V 0.4A 4-DIP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 240mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-DIP, Hexdip, HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)
pacote: 4-DIP (0.300", 7.62mm)
Estoque65.976
MOSFET (Metal Oxide)
200V
400mA (Ta)
10V
4V @ 250µA
8.9nC @ 10V
170pF @ 25V
±20V
-
1W (Ta)
3 Ohm @ 240mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP, Hexdip, HVMDIP
4-DIP (0.300", 7.62mm)
IPP50R299CPHKSA1
Infineon Technologies

MOSFET N-CH 550V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 299 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque4.816
MOSFET (Metal Oxide)
550V
12A (Tc)
10V
3.5V @ 440µA
31nC @ 10V
1190pF @ 100V
±20V
-
104W (Tc)
299 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPP80N06S2L09AKSA2
Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 125µA
  • Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque3.600
MOSFET (Metal Oxide)
55V
80A (Tc)
4.5V, 10V
2V @ 125µA
105nC @ 10V
2620pF @ 25V
±20V
-
190W (Tc)
8.5 mOhm @ 52A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IXFR18N90P
IXYS

MOSFET N-CH 900V ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 660 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
pacote: ISOPLUS247?
Estoque3.200
MOSFET (Metal Oxide)
900V
10.5A (Tc)
10V
6V @ 1mA
97nC @ 10V
5230pF @ 25V
±30V
-
200W (Tc)
660 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
FCB199N65S3
Fairchild/ON Semiconductor

SUPERFET3 650V 199MOHM D2PAK PKG

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque5.152
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMTH6010SCT
Diodes Incorporated

MOSFET BVDSS: 41V 60V,TO220-3,TU

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque7.440
MOSFET (Metal Oxide)
60V
100A (Tc)
10V
4V @ 250µA
36.3nC @ 10V
1940pF @ 30V
±20V
-
2.8W (Ta), 125W (Tc)
7.2 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot STL110N10F7
STMicroelectronics

MOSFET N-CH 100V 21A PWRFLAT5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5117pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat? (5x6)
  • Package / Case: 8-PowerSMD, Flat Leads
pacote: 8-PowerSMD, Flat Leads
Estoque27.840
MOSFET (Metal Oxide)
100V
107A (Tc)
10V
4.5V @ 250µA
72nC @ 10V
5117pF @ 50V
±20V
-
136W (Tc)
6 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerFlat? (5x6)
8-PowerSMD, Flat Leads
BUK9506-75B,127
Nexperia USA Inc.

MOSFET N-CH 75V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11693pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque32.760
MOSFET (Metal Oxide)
75V
75A (Tc)
4.5V, 10V
2V @ 1mA
95nC @ 5V
11693pF @ 25V
±15V
-
300W (Tc)
5.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPS70R360P7SAKMA1
Infineon Technologies

MOSFET N-CH 700V 34A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 59.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 3A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251
  • Package / Case: TO-251-3 Stub Leads, IPak
pacote: TO-251-3 Stub Leads, IPak
Estoque15.732
MOSFET (Metal Oxide)
700V
12.5A (Tc)
10V
3.5V @ 150µA
16.4nC @ 10V
517pF @ 400V
±16V
-
59.5W (Tc)
360 mOhm @ 3A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO251
TO-251-3 Stub Leads, IPak
FDMC8327L
Fairchild/ON Semiconductor

MOSFET N-CH 40V 12A 8MLP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque3.376
MOSFET (Metal Oxide)
40V
12A (Ta), 14A (Tc)
4.5V, 10V
3V @ 250µA
26nC @ 10V
1850pF @ 20V
±20V
-
2.3W (Ta), 30W (Tc)
9.7 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3)
8-PowerWDFN
PML260SN,118
Nexperia USA Inc.

MOSFET N-CH 200V 8.8A 8HVSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 657pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 294 mOhm @ 2.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN3333 (3.3x3.3)
  • Package / Case: 8-VDFN Exposed Pad
pacote: 8-VDFN Exposed Pad
Estoque15.174
MOSFET (Metal Oxide)
200V
8.8A (Tc)
6V, 10V
4V @ 1mA
13.3nC @ 10V
657pF @ 30V
±20V
-
50W (Tc)
294 mOhm @ 2.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN3333 (3.3x3.3)
8-VDFN Exposed Pad
hot IRFR3910TRPBF
Infineon Technologies

MOSFET N-CH 100V 16A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 79W (Tc)
  • Rds On (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque317.388
MOSFET (Metal Oxide)
100V
16A (Tc)
10V
4V @ 250µA
44nC @ 10V
640pF @ 25V
±20V
-
79W (Tc)
115 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK5014DPP-00-T2
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TK3R2A08QM-S4X
Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 3.2MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 46A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
pacote: -
Request a Quote
MOSFET (Metal Oxide)
80 V
92A (Tc)
6V, 10V
3.5V @ 1.3mA
102 nC @ 10 V
7670 pF @ 40 V
±20V
-
45W (Tc)
3.2mOhm @ 46A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
RF1S45N06SM
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 45A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Request a Quote
MOSFET (Metal Oxide)
60 V
45A
-
-
-
-
-
-
-
-
-
Surface Mount
TO-263AB
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SI2351DS-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 2.8A SOT23-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
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MOSFET (Metal Oxide)
20 V
2.8A (Tc)
-
1.5V @ 250µA
5.1 nC @ 5 V
250 pF @ 10 V
-
-
-
115mOhm @ 2.4A, 4.5V
-
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SSM3K361TU-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET NCH 100V 3.5A SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
pacote: -
Estoque22.416
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
430 pF @ 15 V
±20V
-
1W (Ta)
69mOhm @ 2A, 10V
175°C
Surface Mount
UFM
3-SMD, Flat Leads
TK33S10N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque11.547
MOSFET (Metal Oxide)
100 V
33A (Ta)
4.5V, 10V
2.5V @ 500µA
33 nC @ 10 V
2250 pF @ 10 V
±20V
-
125W (Tc)
9.7mOhm @ 16.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
FQPF9N25CRDTU
Fairchild Semiconductor

8.8A, 250V, N-CHANNEL, MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
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NTHL190N65S3HF
onsemi

MOSFET N-CH 650V 20A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 400 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 162W (Tc)
  • Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: -
Estoque414
MOSFET (Metal Oxide)
650 V
20A (Tc)
10V
5V @ 430µA
34 nC @ 10 V
1610 pF @ 400 V
±30V
-
162W (Tc)
190mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
RSS065N06HZGTB
Rohm Semiconductor

NCH 60V 6.5A POWER MOSFET. RSS06

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: -
Estoque19.830
MOSFET (Metal Oxide)
60 V
6.5A (Ta)
4V, 10V
2.5V @ 1mA
16 nC @ 5 V
900 pF @ 10 V
±20V
-
2W (Ta)
37mOhm @ 6.5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DMTH31M7LPSQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5741 pF @ 15 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta), 113W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
pacote: -
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MOSFET (Metal Oxide)
30 V
30A (Ta), 100A (Tc)
4.5V, 10V
3V @ 250µA
90 nC @ 10 V
5741 pF @ 15 V
±16V
-
1.3W (Ta), 113W (Tc)
1.7mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
PMV15ENER
Nexperia USA Inc.

PMV15ENE/SOT23/TO-236AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta), 8.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 5.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-236AB
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: -
Estoque36.558
MOSFET (Metal Oxide)
30 V
6.2A (Ta)
4.5V, 10V
2.5V @ 250µA
14 nC @ 10 V
440 pF @ 15 V
±20V
-
700mW (Ta), 8.3W (Tc)
20mOhm @ 5.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
2SK2109-T1-AZ
Renesas

2SK2109-T1-AZ - N-CHANNEL MOS FE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 111 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 300mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-62
  • Package / Case: TO-243AA
pacote: -
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MOSFET (Metal Oxide)
60 V
500mA (Ta)
4V, 10V
2V @ 1mA
-
111 pF @ 10 V
±20V
-
2W (Ta)
800mOhm @ 300mA, 10V
150°C
Surface Mount
SC-62
TO-243AA
NTMKE4890NT1G
onsemi

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Request a Quote
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