Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 30V 5.5A 6-TSOP
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque7.136 |
|
MOSFET (Metal Oxide) | 30V | 5.5A (Ta) | 4.5V, 10V | 2V @ 40µA | 29nC @ 10V | 805pF @ 25V | ±20V | - | 2W (Ta) | 43 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | P-TSOP6-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Infineon Technologies |
MOSFET N-CH 100V 8.7A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.112 |
|
MOSFET (Metal Oxide) | 100V | 8.7A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | ±20V | - | 35W (Tc) | 190 mOhm @ 5.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 40V 4.6A 8-TSSOP
|
pacote: 8-TSSOP (0.173", 4.40mm Width) |
Estoque12.300 |
|
MOSFET (Metal Oxide) | 40V | 4.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 38nC @ 4.5V | 3150pF @ 25V | ±20V | - | 1.5W (Ta) | 46 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
||
Infineon Technologies |
MOSFET N-CH 55V 27A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque3.840 |
|
MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 4V @ 250µA | 34nC @ 10V | 700pF @ 25V | ±20V | - | 68W (Tc) | 45 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 60V 0.4A TO-205
|
pacote: - |
Estoque4.736 |
|
- | - | - | 5V, 10V | - | - | - | ±20V | - | - | - | - | - | - | - |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 43.5A TO-220
|
pacote: TO-220-3 |
Estoque7.600 |
|
MOSFET (Metal Oxide) | 100V | 43.5A (Tc) | 10V | 4V @ 250µA | 62nC @ 10V | 1800pF @ 25V | ±25V | - | 146W (Tc) | 39 mOhm @ 21.75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 25V 11.4A IPAK
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque13.164 |
|
MOSFET (Metal Oxide) | 25V | 11.4A (Ta), 78A (Tc) | 4.5V, 10V | 3V @ 250µA | 35nC @ 4.5V | 2250pF @ 12V | ±20V | - | 1.4W (Ta), 64W (Tc) | 6 mOhm @ 78A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET N-CH 500V 3.1A PG-TO-252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.896 |
|
MOSFET (Metal Oxide) | 500V | 3.1A (Tc) | 13V | 3.5V @ 70µA | 8.2nC @ 10V | 178pF @ 100V | ±20V | - | 42W (Tc) | 1.4 Ohm @ 900mA, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 7.2A 6DFN
|
pacote: 6-UDFN Exposed Pad |
Estoque2.080 |
|
MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 2V @ 250µA | 10.8nC @ 10V | 435pF @ 10V | ±20V | - | 1.7W (Ta), 12.5W (Tc) | 19.5 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN2020MD (2x2) | 6-UDFN Exposed Pad |
||
ON Semiconductor |
MOSFET N-CH 60V 109A 8WDFN
|
pacote: 8-PowerWDFN |
Estoque7.264 |
|
MOSFET (Metal Oxide) | 60V | 109A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 12nC @ 4.5V | 1935pF @ 25V | ±20V | - | 114W (Tc) | 5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Microsemi Corporation |
MOSFET N-CH 600V 95A SP1
|
pacote: SP1 |
Estoque6.208 |
|
MOSFET (Metal Oxide) | 600V | 95A | 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | ±20V | - | 462W (Tc) | 24 mOhm @ 47.5A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 35A TO-220
|
pacote: TO-220-3 Full Pack, Isolated Tab |
Estoque7.744 |
|
MOSFET (Metal Oxide) | 650V | 35A (Ta) | 10V | 3.5V @ 2.1mA | 100nC @ 10V | 4100pF @ 300V | ±30V | - | 50W (Tc) | 80 mOhm @ 17.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 29A TO247
|
pacote: TO-247-3 |
Estoque103.464 |
|
MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 3.5V @ 250µA | 95nC @ 10V | 2990pF @ 380V | ±20V | - | 278W (Tc) | 125 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 100V 4.5A 8PWRFLAT
|
pacote: 8-PowerVDFN |
Estoque6.384 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta), 18A (Tc) | 10V | 4.5V @ 250µA | 7.8nC @ 10V | 408pF @ 50V | ±20V | - | 2.9W (Ta), 50W (Tc) | 70 mOhm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (3.3x3.3) | 8-PowerVDFN |
||
ON Semiconductor |
MOSFET N-CH 60V 260MA SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque1.339.704 |
|
MOSFET (Metal Oxide) | 60V | 260mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.81nC @ 5V | 26.7pF @ 25V | ±20V | - | 300mW (Tj) | 2.5 Ohm @ 240mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 19A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque493.668 |
|
MOSFET (Metal Oxide) | 200V | 19A (Tc) | 6V, 10V | 4V @ 250µA | 51nC @ 10V | 1800pF @ 25V | ±20V | - | 3W (Ta), 136W (Tc) | 90 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microchip Technology |
MOSFET P-CH 400V 0.125A SOT89-3
|
pacote: TO-243AA |
Estoque45.636 |
|
MOSFET (Metal Oxide) | 400V | 125mA (Tj) | 4.5V, 10V | 2.4V @ 1mA | - | 125pF @ 25V | ±20V | - | 1.6W (Ta) | 25 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
||
Texas Instruments |
MOSFET N-CH 60V 100A 8SON
|
pacote: 8-PowerTDFN |
Estoque6.464 |
|
MOSFET (Metal Oxide) | 60V | 100A (Ta) | 4.5V, 10V | 2.4V @ 250µA | 20nC @ 10V | 1500pF @ 30V | ±20V | - | 3.2W (Ta), 116W (Tc) | 6.8 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SON (5x6) | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET P-CH 20V 600MA 3DFN
|
pacote: - |
Estoque62.661 |
|
MOSFET (Metal Oxide) | 20 V | 600mA (Ta) | 1.2V, 4.5V | 1V @ 250µA | 0.8 nC @ 8 V | 46.1 pF @ 10 V | ±8V | - | 400mW | 1Ohm @ 100mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1212-3 | 3-UDFN |
||
Infineon Technologies |
MOSFET N-CH 200V 34A TO220-3
|
pacote: - |
Estoque9.219 |
|
MOSFET (Metal Oxide) | 200 V | 34A (Tc) | 10V | 4V @ 90µA | 29 nC @ 10 V | 2350 pF @ 100 V | ±20V | - | 136W (Tc) | 32mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 12V 7.6A U-WLB1515-9
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 7.6A (Ta) | 2.5V, 4.5V | 1.3V @ 250µA | 4.9 nC @ 4.5 V | 457 pF @ 6 V | -6V | - | 1W (Ta) | 18mOhm @ 2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1515-9 | 9-UFBGA, WLBGA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 8A TO263
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 8A (Tc) | 10V | 3.5V @ 250µA | 11.5 nC @ 10 V | 608 pF @ 100 V | ±20V | - | 96W (Tc) | 600mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Rohm Semiconductor |
MOSFET N-CH 45V 2.5A TSMT3
|
pacote: - |
Estoque31.077 |
|
MOSFET (Metal Oxide) | 45 V | 2.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 3.2 nC @ 4.5 V | 250 pF @ 10 V | ±12V | - | 700mW (Ta) | 130mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
Diodes Incorporated |
MOSFET N-CH 30V 60A POWERDI3333
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 42 nC @ 10 V | 2000 pF @ 15 V | ±20V | - | 2W (Ta) | 5.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
||
YAGEO XSEMI |
MOSFET N-CH 30V 31A 105A PMPAK
|
pacote: - |
Estoque3.000 |
|
MOSFET (Metal Oxide) | 30 V | 31A (Ta), 105A (Tc) | 4.5V, 10V | 3V @ 250µA | 21 nC @ 4.5 V | 2240 pF @ 25 V | ±20V | - | 5W (Ta), 56.8W (Tc) | 3.3mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PMPAK® 5 x 6 | 8-PowerLDFN |
||
Rohm Semiconductor |
1200V, 62M, 4-PIN THD, TRENCH-ST
|
pacote: - |
Estoque14.826 |
|
SiCFET (Silicon Carbide) | 1200 V | 26A (Tc) | 18V | 4.8V @ 6.45mA | 64 nC @ 18 V | 1498 pF @ 800 V | +21V, -4V | - | 115W | 81mOhm @ 12A, 18V | 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
Renesas Electronics Corporation |
MOSFET P-CH 20V SC-95
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6A (Ta) | - | 1.5V @ 1mA | 6 nC @ 4 V | 680 pF @ 10 V | - | - | - | 58mOhm @ 3A, 4.5V | - | Surface Mount | SC-95-6, Mini Mold Thin | SC-95-6 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 1.3A (Tc) | 10V | 4.5V @ 250µA | 8 nC @ 10 V | 160 pF @ 25 V | ±30V | - | 45W (Tc) | 9Ohm @ 650mA, 10V | -50°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
NX6008NBKW/SOT323/SC-70
|
pacote: - |
Estoque169.236 |
|
MOSFET (Metal Oxide) | 60 V | 250mA (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 0.7 nC @ 4.5 V | 27 pF @ 30 V | ±8V | - | 270mW (Ta), 1.5W (Tc) | 2.8Ohm @ 300mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 32A 8SOP
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 32A (Ta) | 4.5V, 10V | 2.3V @ 500µA | 43 nC @ 10 V | 3365 pF @ 10 V | ±20V | - | 1.6W (Ta), 45W (Tc) | 7.3mOhm @ 16A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |