Transphorm, Inc. (Nasdaq: TGAN), a pioneer and global supplier of high-reliability, high-performance Gallium Nitride (GaN) power conversion products, today announced the addition of the TP65H050G4BS device to its surface mount package portfolio. This new high power surface mount device (SMD) is a 650V SuperGaN® field effect transistor (FET) in a TO-263 (D2PAK) package with a typical on-resistance of 50mOhm. The TP65H050G4BS is Transphorm's seventh SMD, enriching the current PQFN devices for low and medium power applications.
The TP65H050G4BS is JEDEC certified, offering designers and manufacturers several advantages to develop high-power (multi-kilowatt to multi-kilowatt) systems typically used in data centers and a wide range of industrial applications. It features Transphorm's best-in-class reliability, gate robustness (±20 Vmax) and silicon noise immunity threshold (4V), along with the ease of design and drive performance of GaN technology. Engineers need to use larger D2PAKs for higher power and surface mount packaging requirements. Compared to PQFN packages, D2PAK can achieve better thermal performance while helping users improve PCB assembly efficiency through a single manufacturing process.
The D2PAK is available as a discrete device or with a vertical daughter card to increase the power density of Transphorm's 2.5kW AC-DC bridgeless totem-pole power factor correction (PFC) evaluation board, the TDTTP2500B066B-KIT. It can also switch to the 1.2kW synchronous half-bridge TDHBG1200DC100-KIT evaluation board to drive multi-kilowatt power.
"The D2PAK is an important addition to our product portfolio," said Philip Zuk, senior vice president of global marketing, applications and business development at Transphorm. "It expands the availability of our SMD products into high power areas where we previously supported these applications with through-hole devices. .Customers get the benefits of our GaN platform, such as the familiar TO-XXX package that eliminates design challenges, simplifies system development and speeds time to market.”
Transphorm is currently the only GaN supplier to offer high voltage GaN devices in standard TO-XXX packages. Notably, these packaged products do not support alternative enhancement-mode GaN technology due to their inherent gate damage susceptibility.
