Transphorm Produtos | Heisener Electronics

Nº de peças	Fabricante	Descrição	pacote	Estoque
TPH3206LXB	Transphorm	650V, 150M FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Estoque3.024
TPH3208LDG	Transphorm	GAN FET 650V 20A PQFN88 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	pacote: 3-PowerDFN	Estoque10.308
TPH3206LDB	Transphorm	MOSFET N-CH GANFET 650V 16A PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 4-PowerDFN	pacote: 4-PowerDFN	Estoque7.520
TPH3202LS	Transphorm	GAN FET 600V 9A PQFN88 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	pacote: 3-PowerDFN	Estoque6.684
TPH3206PSB	Transphorm	MOSFET N-CH GANFET 650V TO220AB FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: TO-220-3	Estoque7.152
TPH3208LS	Transphorm	GAN FET 650V 20A PQFN88 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	pacote: 3-PowerDFN	Estoque7.536
TPH3206PD	Transphorm	GAN FET 600V 17A TO220 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacote: TO-220-3	Estoque6.912
TPH3206PS	Transphorm	GAN FET 600V 17A TO220 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacote: TO-220-3	Estoque8.664
TPH3202PD	Transphorm	GAN FET 600V 9A TO220 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	pacote: TO-220-3	Estoque6.060
TPD3215M	Transphorm	CASCODE GAN HB 600V 70A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V Power - Max: 470W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: Module Supplier Device Package: Module	pacote: Module	Estoque5.616
TP65H050G4WS	Transphorm	650 V 34 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	pacote: -	Estoque639
TP65H050G4YS	Transphorm	650 V 35 A GAN FET HIGH VOLTAGE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 132W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	pacote: -	Estoque1.296
TP65H050G4BS	Transphorm	650 V 34 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	pacote: -	Estoque687
TP90H050WS	Transphorm	GANFET N-CH 900V 34A TO247-3 FET Type: N-Channel Technology: GaNFET (Cascode Gallium Nitride FET) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 119W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	pacote: -	Estoque321
TP65H035WSQA	Transphorm	GANFET N-CH 650V 47.2A TO247-3 FET Type: N-Channel Technology: GaNFET (Cascode Gallium Nitride FET) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	pacote: -	Estoque570
TP65H070G4LSG-TR	Transphorm	GANFET N-CH 650V 29A QFN8X8 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerTDFN	pacote: -	Estoque8.118
TP65H150G4PS	Transphorm	GAN FET N-CH 650V TO-220 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: -	Estoque9.321
TP65H050WSQA	Transphorm	GANFET N-CH 650V 36A TO247-3 FET Type: N-Channel Technology: GaNFET (Cascode Gallium Nitride FET) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	pacote: -	Estoque129
TPH3206LDG-TR	Transphorm	GANFET N-CH 600V 17A 3PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	pacote: -	Request a Quote
TP65H070G4QS-TR	Transphorm	650 V 29 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	pacote: -	Request a Quote
TP90H180PS	Transphorm	GANFET N-CH 900V 15A TO220AB FET Type: N-Channel Technology: GaNFET (Cascode Gallium Nitride FET) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: -	Request a Quote
TPH3206LSGB	Transphorm	GANFET N-CH 650V 16A 3PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 81W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	pacote: -	Request a Quote
TP65H150G4LSG-TR	Transphorm	650 V 13 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerTDFN	pacote: -	Request a Quote
TP65H480G4JSG	Transphorm	MOSFET 650V, 480mOhm FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.8V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 13.2W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (5x6) Package / Case: 3-PowerTDFN	pacote: -	Request a Quote
TP65H035G4WSQA	Transphorm	650 V 46.5 GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	pacote: -	Estoque843
TP65H035G4WS	Transphorm	GANFET N-CH 650V 46.5A TO247-3 FET Type: N-Channel Technology: GaNFET (Cascode Gallium Nitride FET) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	pacote: -	Estoque2.265
TP65H035G4QS	Transphorm	650 V 46.5 A GAN FET HIGH VOLTAG FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	pacote: -	Request a Quote
TPH3208LSG	Transphorm	GANFET N-CH 650V 20A 3PQFN FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	pacote: -	Request a Quote

TPH3206LXB

Transphorm

650V, 150M

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque3.024

TPH3208LDG

Transphorm

GAN FET 650V 20A PQFN88

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (8x8)
Package / Case: 3-PowerDFN

pacote: 3-PowerDFN

Estoque10.308

TPH3206LDB

Transphorm

MOSFET N-CH GANFET 650V 16A PQFN

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (8x8)
Package / Case: 4-PowerDFN

pacote: 4-PowerDFN

Estoque7.520

TPH3202LS

Transphorm

GAN FET 600V 9A PQFN88

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (8x8)
Package / Case: 3-PowerDFN

pacote: 3-PowerDFN

Estoque6.684

TPH3206PSB

Transphorm

MOSFET N-CH GANFET 650V TO220AB

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 480V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacote: TO-220-3

Estoque7.152

TPH3208LS

Transphorm

GAN FET 650V 20A PQFN88

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (8x8)
Package / Case: 3-PowerDFN

pacote: 3-PowerDFN

Estoque7.536

TPH3206PD

Transphorm

GAN FET 600V 17A TO220

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacote: TO-220-3

Estoque6.912

TPH3206PS

Transphorm

GAN FET 600V 17A TO220

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacote: TO-220-3

Estoque8.664

TPH3202PD

Transphorm

GAN FET 600V 9A TO220

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 350 mOhm @ 5.5A, 8V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

pacote: TO-220-3

Estoque6.060

TPD3215M

Transphorm

CASCODE GAN HB 600V 70A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 34 mOhm @ 30A, 8V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
Power - Max: 470W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: Module
Supplier Device Package: Module

pacote: Module

Estoque5.616

TP65H050G4WS

Transphorm

650 V 34 A GAN FET

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

pacote: -

Estoque639

TP65H050G4YS

Transphorm

650 V 35 A GAN FET HIGH VOLTAGE

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

pacote: -

Estoque1.296

TP65H050G4BS

Transphorm

650 V 34 A GAN FET

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

pacote: -

Estoque687

TP90H050WS

Transphorm

GANFET N-CH 900V 34A TO247-3

FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 600 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

pacote: -

Estoque321

TP65H035WSQA

Transphorm

GANFET N-CH 650V 47.2A TO247-3

FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 32A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

pacote: -

Estoque570

TP65H070G4LSG-TR

Transphorm

GANFET N-CH 650V 29A QFN8X8

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PQFN (8x8)
Package / Case: 3-PowerTDFN

pacote: -

Estoque8.118

TP65H150G4PS

Transphorm

GAN FET N-CH 650V TO-220

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacote: -

Estoque9.321

TP65H050WSQA

Transphorm

GANFET N-CH 650V 36A TO247-3

FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

pacote: -

Estoque129

TPH3206LDG-TR

Transphorm

GANFET N-CH 600V 17A 3PQFN

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PQFN (8x8)
Package / Case: 3-PowerDFN

pacote: -

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TP65H070G4QS-TR

Transphorm

650 V 29 A GAN FET

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TOLL
Package / Case: 8-PowerSFN

pacote: -

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TP90H180PS

Transphorm

GANFET N-CH 900V 15A TO220AB

FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 600 V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacote: -

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TPH3206LSGB

Transphorm

GANFET N-CH 650V 16A 3PQFN

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PQFN (8x8)
Package / Case: 3-PowerDFN

pacote: -

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TP65H150G4LSG-TR

Transphorm

650 V 13 A GAN FET

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 8.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PQFN (8x8)
Package / Case: 3-PowerTDFN

pacote: -

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TP65H480G4JSG

Transphorm

MOSFET 650V, 480mOhm

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs(th) (Max) @ Id: 2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 13.2W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.4A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PQFN (5x6)
Package / Case: 3-PowerTDFN

pacote: -

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TP65H035G4WSQA

Transphorm

650 V 46.5 GAN FET

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 187W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

pacote: -

Estoque843

TP65H035G4WS

Transphorm

GANFET N-CH 650V 46.5A TO247-3

FET Type: N-Channel
Technology: GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

pacote: -

Estoque2.265

TP65H035G4QS

Transphorm

650 V 46.5 A GAN FET HIGH VOLTAG

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TOLL
Package / Case: 8-PowerSFN

pacote: -

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TPH3208LSG

Transphorm

GANFET N-CH 650V 20A 3PQFN

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PQFN (8x8)
Package / Case: 3-PowerDFN

pacote: -

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