Transphorm is a leader and global supplier of highly reliable, high-performance gallium nitride (GaN) power conversion products. The company announced the launch of six surface mount devices (SMDS) in industry-standard PQFN 5x6 and 8x8 packages. These SMDS offer the reliability and performance benefits of Transphorm's patented SuperGaN d-mode dual-switched normally closed platform and are packaged in a configuration commonly used by competing e-mode GaN devices. As a result, these six devices can easily be used as a first design source in an e-mode GaN solution, or as a pin-to-pin-compatible plug-and-pull replacement and/or second source.
For power systems that require the additional thermal Performance of the SuperGaN platform, Transphorm also offers SMDS in an optimised performance package. Regardless of the package, all Transphorm devices feature ease of design and drive because the d-mode configuration uses low-voltage Silicon MosFeTs paired with GaN HEMTs. The platform configuration also allows for the use of standard off-the-shelf controllers and/or drivers, further enhancing the Transphorm family of products with superior drive and designability.
"Transphorm continues to produce a robust portfolio of GaN devices that cover the widest power range available today," said Philip Zuk, senior vice president of business development and marketing for Transphorm. We further consolidate our low-power strategy with the launch of these industry-standard packages, which come on the heels of the release of SiP packages developed in partnership with Weltrend Semiconductor. Now customers can choose how to take advantage of SuperGaN's strengths, whether through Performance packaging, pin-to-pin e-mode compatible industry-standard packaging, or system-level packaging."
SuperGaN's advantage of plug-and-plug replacement
Replacing e-mode devices with SuperGaN d-mode FeTs has been shown to reduce conduction losses, provide higher performance and lower operating temperatures, resulting in longer lifetime reliability. This is due to the fundamental inherent advantages of d-mode GaN closed-type devices compared with e-mode GaN closed-type devices. Can provide the latest direct comparison proves that the test with 72 m Ω SuperGaN technology to replace the 280 w laptop charger 50 m Ω e - game mode equipment
In the charger analysis, the SuperGaN FeTs can operate in the output voltage range of the controller (whereas e-mode requires level switching) and at lower temperatures. SuperGaN's resistance temperature coefficient (TCR) is approximately 25% lower than e-mode, helping to reduce conduction losses. In addition, the number of peripheral components was reduced by 20 percent, indicating lower raw material costs.
Key features of these device sharing include:
● Meet JEDEC standards
● Dynamic RDS(on)eff production test
● Market-leading robust design, wide grid safety margin, transient overvoltage capability
● Very low reverse recovery charge
● Reduce cross loss
Target application
● 72 mΩ FeTs are optimized for data communication, a wide range of industrial, photovoltaic inverters, servo motors, computing systems, and general consumer applications.
● The 150, 240, and 480 mΩ FeTs are optimized for power adapters, low power switching power supplies, lighting, and low power consumer applications.
