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Renesas Electronics America Produtos - Transistores - FET, MOSFET - Simples

Registros 341
Página  4/13
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RJK1002DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 100V 70A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque5.728
MOSFET (Metal Oxide)
100V
70A (Ta)
10V
-
94nC @ 10V
6450pF @ 10V
±20V
-
30W (Tc)
7.6 mOhm @ 35A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
RJK1003DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 100V 50A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque3.376
MOSFET (Metal Oxide)
100V
50A (Ta)
10V
-
59nC @ 10V
4150pF @ 10V
±20V
-
25W (Tc)
11 mOhm @ 25A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
RJK0703DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 75V 70A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque5.792
MOSFET (Metal Oxide)
75V
70A (Ta)
10V
-
56nC @ 10V
4150pF @ 10V
±20V
-
25W (Tc)
6.7 mOhm @ 35A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
RJK0603DPN-E0#T2
Renesas Electronics America

MOSFET N-CH 60V 80A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 40A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque2.096
MOSFET (Metal Oxide)
60V
80A (Ta)
10V
-
57nC @ 10V
4150pF @ 10V
±20V
-
125W (Tc)
5.2 mOhm @ 40A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RJK1003DPN-E0#T2
Renesas Electronics America

MOSFET N-CH 100V 50A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque3.040
MOSFET (Metal Oxide)
100V
50A (Ta)
10V
-
59nC @ 10V
4150pF @ 10V
±20V
-
125W (Tc)
11 mOhm @ 25A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RJK0703DPN-E0#T2
Renesas Electronics America

MOSFET N-CH 75V 70A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 35A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque7.728
MOSFET (Metal Oxide)
75V
70A (Ta)
10V
-
56nC @ 10V
4150pF @ 10V
±20V
-
125W (Tc)
6.7 mOhm @ 35A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
NP100P04PDG-E1-AY
Renesas Electronics America

MOSFET P-CH 40V 100A TO-263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque6.672
MOSFET (Metal Oxide)
40V
100A (Tc)
4.5V, 10V
2.5V @ 1mA
320nC @ 10V
15100pF @ 10V
±20V
-
1.8W (Ta), 200W (Tc)
3.5 mOhm @ 50A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot 2SK3480-AZ
Renesas Electronics America

MOSFET N-CH 100V MP-25/TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 84W (Tc)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque401.784
MOSFET (Metal Oxide)
100V
50A (Tc)
4.5V, 10V
-
74nC @ 10V
3600pF @ 10V
±20V
-
1.5W (Ta), 84W (Tc)
31 mOhm @ 25A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RJK5033DPP-M0#T2
Renesas Electronics America

MOSFET N-CH 500V 6A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 27.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FL
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque3.616
MOSFET (Metal Oxide)
500V
6A (Ta)
10V
-
-
600pF @ 25V
±30V
-
27.4W (Tc)
1.3 Ohm @ 3A, 10V
150°C (TJ)
Through Hole
TO-220FL
TO-220-3 Full Pack
N0602N-S19-AY
Renesas Electronics America

MOSFET N-CH 60V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Isolated Tab
pacote: TO-220-3 Isolated Tab
Estoque6.416
MOSFET (Metal Oxide)
60V
100A (Ta)
10V
-
133nC @ 10V
7730pF @ 25V
±20V
-
1.5W (Ta), 156W (Tc)
4.6 mOhm @ 50A, 10V
150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Isolated Tab
NP90N055VUK-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 90A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 147W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.85 mOhm @ 45A, 5V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque4.688
MOSFET (Metal Oxide)
55V
90A (Tc)
10V
4V @ 250µA
102nC @ 10V
6000pF @ 25V
±20V
-
1.2W (Ta), 147W (Tc)
3.85 mOhm @ 45A, 5V
175°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot 2SJ649-AZ
Renesas Electronics America

MOSFET P-CH 60V 20A TO-220

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 Isolated Tab
  • Package / Case: TO-220-3 Isolated Tab
pacote: TO-220-3 Isolated Tab
Estoque11.088
MOSFET (Metal Oxide)
60V
20A (Tc)
4V, 10V
-
38nC @ 10V
1900pF @ 10V
±20V
-
2W (Ta), 25W (Tc)
48 mOhm @ 10A, 10V
150°C (TJ)
Through Hole
TO-220 Isolated Tab
TO-220-3 Isolated Tab
RJK5030DPP-M0#T2
Renesas Electronics America

MOSFET N-CH 500V 5A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 28.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FL
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque6.464
MOSFET (Metal Oxide)
500V
5A (Ta)
10V
-
13nC @ 10V
550pF @ 25V
±30V
-
28.5W (Tc)
1.6 Ohm @ 2A, 10V
150°C (TJ)
Through Hole
TO-220FL
TO-220-3 Full Pack
2SK3482-AZ
Renesas Electronics America

MOSFET N-CH 100V MP-3/TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 18A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (MP-3)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque3.536
MOSFET (Metal Oxide)
100V
36A (Ta)
4.5V, 10V
-
72nC @ 10V
3600pF @ 10V
±20V
-
1W (Ta), 50W (Tc)
33 mOhm @ 18A, 10V
150°C (TJ)
Through Hole
TO-251 (MP-3)
TO-251-3 Short Leads, IPak, TO-251AA
hot HAT2170H-EL-E
Renesas Electronics America

MOSFET N-CH 40V 45A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque90.000
MOSFET (Metal Oxide)
40V
45A (Ta)
7V, 10V
3V @ 1mA
62nC @ 10V
4650pF @ 10V
±20V
-
30W (Tc)
4.2 mOhm @ 22.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot HAT2169H-EL-E
Renesas Electronics America

MOSFET N-CH 40V 50A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6650pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque153.900
MOSFET (Metal Oxide)
40V
50A (Ta)
4.5V, 10V
2.5V @ 1mA
45nC @ 4.5V
6650pF @ 10V
±20V
-
30W (Tc)
3.5 mOhm @ 25A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
N0412N-S19-AY
Renesas Electronics America

MOSFET N-CH 40V 100A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5550pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque2.336
MOSFET (Metal Oxide)
40V
100A (Ta)
10V
-
100nC @ 10V
5550pF @ 25V
±20V
-
1.5W (Ta), 119W (Tc)
3.7 mOhm @ 50A, 10V
150°C (TJ)
Through Hole
TO-220
TO-220-3
NP70N10KUF-E1-AY
Renesas Electronics America

MOSFET N-CH 100V 70A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque7.168
MOSFET (Metal Oxide)
100V
70A (Tc)
10V
3.3V @ 250µA
75nC @ 10V
3750pF @ 25V
±20V
-
1.8W (Ta), 120W (Tc)
20 mOhm @ 35A, 10V
175°C (TJ)
Surface Mount
TO-263
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RJK1555DPA-00#J0
Renesas Electronics America

MOSFET N-CH 150V W-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque6.528
MOSFET (Metal Oxide)
150V
25A (Ta)
10V
-
38nC @ 10V
2400pF @ 25V
±30V
-
30W (Tc)
48 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
hot RJK1557DPA-00#J0
Renesas Electronics America

MOSFET N-CH 150V W-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque32.820
MOSFET (Metal Oxide)
150V
25A (Ta)
10V
-
20nC @ 10V
1250pF @ 25V
±30V
-
30W (Tc)
58 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
RJK6012DPE-00#J3
Renesas Electronics America

MOSFET N-CH 600V 10A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 920 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
pacote: SC-83
Estoque4.064
MOSFET (Metal Oxide)
600V
10A (Ta)
10V
-
30nC @ 10V
1100pF @ 25V
±30V
-
100W (Tc)
920 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
hot HAT2173H-EL-E
Renesas Electronics America

MOSFET N-CH 100V 25A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 6V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque243.456
MOSFET (Metal Oxide)
100V
25A (Ta)
8V, 10V
6V @ 20mA
61nC @ 10V
4350pF @ 10V
±20V
-
30W (Tc)
15 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot HAT2171H-EL-E
Renesas Electronics America

MOSFET N-CH 40V 40A 5LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque97.800
MOSFET (Metal Oxide)
40V
40A (Ta)
7V, 10V
-
52nC @ 10V
3750pF @ 10V
±20V
-
25W (Tc)
4.8 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
H5N2522LSTL-E
Renesas Electronics America

MOSFET N-CH 250V 20A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
pacote: SC-83
Estoque4.544
MOSFET (Metal Oxide)
250V
20A (Ta)
10V
-
47nC @ 10V
1300pF @ 25V
±30V
-
75W (Tc)
180 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
hot HAT2160H-EL-E
Renesas Electronics America

MOSFET N-CH 20V 60A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 7750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque30.960
MOSFET (Metal Oxide)
20V
60A (Ta)
4.5V, 10V
2.3V @ 1mA
54nC @ 4.5V
7750pF @ 10V
±20V
-
30W (Tc)
2.6 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
HAT2279H-EL-E
Renesas Electronics America

MOSFET N-CH 80V 30A 5LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque6.656
MOSFET (Metal Oxide)
80V
30A (Ta)
4.5V, 10V
-
60nC @ 10V
3520pF @ 10V
±20V
-
25W (Tc)
12 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot HAT2165H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 55A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5180pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque274.104
MOSFET (Metal Oxide)
30V
55A (Ta)
4.5V, 10V
2.5V @ 1mA
33nC @ 4.5V
5180pF @ 10V
±20V
-
30W (Tc)
3.3 mOhm @ 27.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
RJK1576DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 150V WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: WPAK(3F) (5x6)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque6.368
MOSFET (Metal Oxide)
150V
25A (Ta)
10V
-
19nC @ 10V
1200pF @ 25V
±30V
-
65W (Tc)
58 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
WPAK(3F) (5x6)
8-PowerVDFN