Renesas Electronics America Produtos - Transistores - FET, MOSFET - Simples | Heisener Electronics
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Renesas Electronics America Produtos - Transistores - FET, MOSFET - Simples

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Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
UPA2812T1L-E2-AT
Renesas Electronics America

MOSFET P-CH 30V 30A 8HVSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3740pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque4.576
MOSFET (Metal Oxide)
30V
30A (Tc)
4.5V, 10V
-
100nC @ 10V
3740pF @ 10V
±20V
-
1.5W (Ta)
4.8 mOhm @ 30A, 10V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerVDFN
RJK6032DPD-00#J2
Renesas Electronics America

MOSFET N-CH 600V 3A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque6.224
MOSFET (Metal Oxide)
600V
3A (Ta)
10V
-
9nC @ 10V
285pF @ 25V
±30V
-
40.3W (Tc)
4.3 Ohm @ 1.5A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
UPA2821T1L-E1-AT
Renesas Electronics America

MOSFET N-CH 30V 26A 8HVSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 26A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque4.384
MOSFET (Metal Oxide)
30V
26A (Tc)
4.5V, 10V
-
51nC @ 10V
2490pF @ 10V
±20V
-
1.5W (Ta)
3.8 mOhm @ 26A, 10V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerWDFN
RJK6002DPH-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 2A TO251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 Ohm @ 1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque3.920
MOSFET (Metal Oxide)
600V
2A (Ta)
10V
-
6.2nC @ 10V
165pF @ 25V
±30V
-
30W (Tc)
6.8 Ohm @ 1A, 10V
150°C (TJ)
Through Hole
TO-251
TO-251-3 Short Leads, IPak, TO-251AA
RJK4532DPD-00#J2
Renesas Electronics America

MOSFET N-CH 450V 4A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque7.456
MOSFET (Metal Oxide)
450V
4A (Ta)
10V
-
9nC @ 10V
280pF @ 25V
±30V
-
40.3W (Tc)
2.3 Ohm @ 2A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
RJK4002DPD-00#J2
Renesas Electronics America

MOSFET N-CH 400V 3A MP3A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MP-3A
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque3.296
MOSFET (Metal Oxide)
400V
3A (Ta)
10V
-
6nC @ 10V
165pF @ 25V
±30V
-
30W (Tc)
2.9 Ohm @ 1.5A, 10V
150°C (TJ)
Surface Mount
MP-3A
TO-252-3, DPak (2 Leads + Tab), SC-63
UPA2813T1L-E1-AT
Renesas Electronics America

MOSFET P-CH 30V 27A 8HVSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 10V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 27A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HVSON (3x3.3)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque2.416
MOSFET (Metal Oxide)
30V
27A (Tc)
-
-
80nC @ 10V
3130pF @ 10V
-
-
1.5W (Ta), 52W (Tc)
6.2 mOhm @ 27A, 10V
-
Surface Mount
8-HVSON (3x3.3)
8-PowerVDFN
UPA2814T1S-E2-AT
Renesas Electronics America

MOSFET P-CH 30V 24A 8HWSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 24A, 5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque7.104
MOSFET (Metal Oxide)
30V
24A (Tc)
4.5V, 10V
-
74nC @ 10V
2800pF @ 10V
±20V
-
1.5W (Ta)
7.8 mOhm @ 24A, 5V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerWDFN
hot UPA2825T1S-E2-AT
Renesas Electronics America

MOSFET N-CH 30V 8HVSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 24A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque265.884
MOSFET (Metal Oxide)
30V
24A (Tc)
4.5V, 10V
-
57nC @ 10V
2600pF @ 10V
±20V
-
1.5W (Ta), 16.5W (Tc)
4.6 mOhm @ 24A, 10V
150°C (TJ)
Surface Mount
-
8-PowerWDFN
RJK0353DPA-01#J0B
Renesas Electronics America

MOSFET N-CH 30V 35A 2WPACK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque4.768
MOSFET (Metal Oxide)
30V
35A (Ta)
4.5V, 10V
2.5V @ 1mA
14nC @ 4.5V
2180pF @ 10V
±20V
-
40W (Tc)
5.2 mOhm @ 17.5A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
hot UPA2813T1L-E2-AT
Renesas Electronics America

MOSFET P-CH 30V 27A 8HVSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 27A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerVDFN
pacote: 8-PowerVDFN
Estoque43.128
MOSFET (Metal Oxide)
30V
27A (Tc)
4.5V, 10V
-
80nC @ 10V
3130pF @ 10V
±20V
-
1.5W (Ta)
6.2 mOhm @ 27A, 10V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerVDFN
UPA2820T1S-E2-AT
Renesas Electronics America

MOSFET N-CH 30V 8HVSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 16W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 22A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque2.704
MOSFET (Metal Oxide)
30V
22A (Tc)
4.5V, 10V
-
50nC @ 10V
2330pF @ 10V
±20V
-
1.5W (Ta), 16W (Tc)
5.3 mOhm @ 22A, 10V
150°C (TJ)
Surface Mount
-
8-PowerWDFN
hot UPA2816T1S-E2-AT
Renesas Electronics America

MOSFET P-CH 30V 17A 8HWSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 33.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 10V
  • Vgs (Max): +20V, -25V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque60.000
MOSFET (Metal Oxide)
30V
17A (Tc)
4.5V, 10V
-
33.4nC @ 10V
1160pF @ 10V
+20V, -25V
-
1.5W (Ta)
15.5 mOhm @ 17A, 10V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerWDFN
RJK4002DJE-00#Z0
Renesas Electronics America

MOSFET N-CH 400V 3A TO92

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 100V
  • Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.54W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92MOD
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
pacote: TO-226-3, TO-92-3 Long Body (Formed Leads)
Estoque3.840
MOSFET (Metal Oxide)
400V
3A (Ta)
10V
-
6nC @ 100V
165pF @ 25V
±30V
-
2.54W (Tc)
2.9 Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-92MOD
TO-226-3, TO-92-3 Long Body (Formed Leads)
UPA2815T1S-E2-AT
Renesas Electronics America

MOSFET P-CH 30V 21A 8HWSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 21A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HWSON (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque3.328
MOSFET (Metal Oxide)
30V
21A (Tc)
4.5V, 10V
-
47nC @ 10V
1760pF @ 10V
±20V
-
1.5W (Ta)
11 mOhm @ 21A, 10V
150°C (TJ)
Surface Mount
8-HWSON (3.3x3.3)
8-PowerWDFN
RJK0354DSP-00#J0
Renesas Electronics America

MOSFET N-CH 30V 16A 8-SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.712
MOSFET (Metal Oxide)
30V
16A (Ta)
4.5V, 10V
-
12nC @ 4.5V
1740pF @ 10V
±20V
-
2W (Ta)
7 mOhm @ 8A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot RJK0355DSP-00#J0
Renesas Electronics America

MOSFET N-CH 30V 12A 8-SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque4.680.000
MOSFET (Metal Oxide)
30V
12A (Ta)
4.5V, 10V
-
6nC @ 4.5V
860pF @ 10V
±20V
-
1.8W (Ta)
11.1 mOhm @ 6A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
hot UPA2737GR-E1-AT
Renesas Electronics America

MOSFET P-CH 30V 11A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
pacote: 8-SOIC (0.173", 4.40mm Width)
Estoque454.224
MOSFET (Metal Oxide)
30V
11A (Ta)
4.5V, 10V
-
45nC @ 10V
1750pF @ 10V
±20V
-
1.1W (Ta)
13 mOhm @ 11A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.173", 4.40mm Width)
UPA2631T1R-E2-AX
Renesas Electronics America

MOSFET P-CH 20V 6A 6SON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 3A, 1.8V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUSON (2x2)
  • Package / Case: 6-WFDFN Exposed Pad
pacote: 6-WFDFN Exposed Pad
Estoque2.864
MOSFET (Metal Oxide)
20V
6A (Ta)
1.8V, 4.5V
-
12.5nC @ 4.5V
1240pF @ 10V
±8V
-
2.5W (Ta)
62 mOhm @ 3A, 1.8V
150°C (TJ)
Surface Mount
6-HUSON (2x2)
6-WFDFN Exposed Pad
UPA2630T1R-E2-AX
Renesas Electronics America

MOSFET P-CH 12V 7A 6SON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 3.5A, 1.8V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUSON (2x2)
  • Package / Case: 6-WFDFN Exposed Pad
pacote: 6-WFDFN Exposed Pad
Estoque2.192
MOSFET (Metal Oxide)
12V
7A (Ta)
1.8V, 4.5V
-
11.3nC @ 4.5V
1260pF @ 10V
±8V
-
2.5W (Ta)
59 mOhm @ 3.5A, 1.8V
150°C (TJ)
Surface Mount
6-HUSON (2x2)
6-WFDFN Exposed Pad
hot UPA2600T1R-E2-AX
Renesas Electronics America

MOSFET N-CH 20V 7A 6SON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 19.1 mOhm @ 3.5A, 2.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-HUSON (2x2)
  • Package / Case: 6-WFDFN Exposed Pad
pacote: 6-WFDFN Exposed Pad
Estoque180.000
MOSFET (Metal Oxide)
20V
7A (Ta)
2.5V, 4.5V
-
7.9nC @ 10V
870pF @ 10V
±12V
-
2.4W (Ta)
19.1 mOhm @ 3.5A, 2.5V
150°C (TJ)
Surface Mount
6-HUSON (2x2)
6-WFDFN Exposed Pad
RJK60S7DPP-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 30A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): +30V, -20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 34.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque5.232
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
-
39nC @ 10V
2300pF @ 25V
+30V, -20V
Super Junction
34.7W (Tc)
125 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
RJK60S7DPK-M0#T0
Renesas Electronics America

MOSFET N-CH 600V 30A TO-3PSG

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): +30V, -20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 227.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PSG
  • Package / Case: TO-3PSG
pacote: TO-3PSG
Estoque6.144
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
-
39nC @ 10V
2300pF @ 25V
+30V, -20V
Super Junction
227.2W (Tc)
125 mOhm @ 15A, 10V
150°C (TJ)
Through Hole
TO-3PSG
TO-3PSG
NP75P03YDG-E1-AY
Renesas Electronics America

MOSFET P-CH 30V 75A 8HSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 138W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 37.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSON
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
pacote: 8-SMD, Flat Lead Exposed Pad
Estoque5.232
MOSFET (Metal Oxide)
30V
75A (Tc)
5V, 10V
2.5V @ 250µA
141nC @ 10V
4800pF @ 25V
±20V
-
1W (Ta), 138W (Tc)
6.2 mOhm @ 37.5A, 10V
175°C (TJ)
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad
NP75N04YUG-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 75A 8HSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 138W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 37.5A, 10V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSON
  • Package / Case: 8-SMD, Flat Lead Exposed Pad
pacote: 8-SMD, Flat Lead Exposed Pad
Estoque6.800
MOSFET (Metal Oxide)
40V
75A (Tc)
10V
4V @ 250µA
116nC @ 10V
6450pF @ 25V
±20V
-
1W (Ta), 138W (Tc)
4.8 mOhm @ 37.5A, 10V
175°C (TJ)
Surface Mount
8-HSON
8-SMD, Flat Lead Exposed Pad
hot RJK0391DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 30V 50A 8WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK (3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque12.756
MOSFET (Metal Oxide)
30V
50A (Ta)
4.5V, 10V
2.5V @ 1mA
34nC @ 4.5V
5600pF @ 10V
±20V
-
50W (Tc)
2.9 mOhm @ 25A, 10V
150°C (TJ)
Surface Mount
8-WPAK (3)
8-PowerWDFN
hot HAT2168H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 30A 5LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque12.492
MOSFET (Metal Oxide)
30V
30A (Ta)
4.5V, 10V
-
11nC @ 4.5V
1730pF @ 10V
±20V
-
15W (Tc)
7.9 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot RJK0651DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V 25A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
pacote: SC-100, SOT-669
Estoque10.008
MOSFET (Metal Oxide)
60V
25A (Ta)
4.5V, 10V
-
15nC @ 4.5V
2030pF @ 10V
±20V
-
45W (Tc)
14 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669