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NXP Produtos - Transistores - FET, MOSFET - Simples

Registros 486
Página  9/18
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BUK7524-55A,127
NXP

MOSFET N-CH 55V 47A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque6.112
MOSFET (Metal Oxide)
55V
47A (Tc)
10V
4V @ 1mA
-
1310pF @ 25V
±20V
-
106W (Tc)
24 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK7523-75A,127
NXP

MOSFET N-CH 75V 53A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 138W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque2.032
MOSFET (Metal Oxide)
75V
53A (Tc)
10V
4V @ 1mA
-
2385pF @ 25V
±20V
-
138W (Tc)
23 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
BUK75150-55A,127
NXP

MOSFET N-CH 55V 11A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 322pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque2.976
MOSFET (Metal Oxide)
55V
11A (Tc)
10V
4V @ 1mA
5.5nC @ 10V
322pF @ 25V
±20V
-
36W (Tc)
150 mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
SI9410DY,518
NXP

MOSFET N-CH 30V SOT96-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque5.808
MOSFET (Metal Oxide)
30V
-
4.5V, 10V
1V @ 250µA
50nC @ 10V
-
±20V
-
2.5W (Ta)
30 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SI4800,518
NXP

MOSFET N-CH 30V 9A SOT96-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque7.664
MOSFET (Metal Oxide)
30V
9A (Ta)
4.5V, 10V
800mV @ 250µA
11.8nC @ 5V
-
±20V
-
2.5W (Ta)
18.5 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SI4420DY,518
NXP

MOSFET N-CH 30V SOT96-1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque6.608
MOSFET (Metal Oxide)
30V
-
4.5V, 10V
1V @ 250µA
120nC @ 10V
-
±20V
-
2.5W (Ta)
9 mOhm @ 12.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
PSMN040-200W,127
NXP

MOSFET N-CH 200V 50A SOT429

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9530pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque3.248
MOSFET (Metal Oxide)
200V
50A (Tc)
10V
4V @ 1mA
183nC @ 10V
9530pF @ 25V
±20V
-
300W (Tc)
40 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PSMN020-150W,127
NXP

MOSFET N-CH 150V 73A SOT429

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9537pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque2.048
MOSFET (Metal Oxide)
150V
73A (Tc)
10V
4V @ 1mA
227nC @ 10V
9537pF @ 25V
±20V
-
300W (Tc)
20 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PSMN010-55D,118
NXP

MOSFET N-CH 55V 75A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 20V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque2.752
MOSFET (Metal Oxide)
55V
75A (Tc)
4.5V, 10V
2V @ 1mA
55nC @ 5V
3300pF @ 20V
±15V
-
125W (Tc)
10.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN009-100W,127
NXP

MOSFET N-CH 100V 100A SOT429

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 214nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque4.384
MOSFET (Metal Oxide)
100V
100A (Tc)
10V
4V @ 1mA
214nC @ 10V
9000pF @ 25V
±20V
-
300W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PSMN005-55P,127
NXP

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque5.856
MOSFET (Metal Oxide)
55V
75A (Tc)
4.5V, 10V
2V @ 1mA
103nC @ 5V
6500pF @ 25V
±15V
-
230W (Tc)
5.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PSMN005-25D,118
NXP

MOSFET N-CH 25V 75A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 20V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque5.024
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
60nC @ 5V
3500pF @ 20V
±15V
-
125W (Tc)
5.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN004-55W,127
NXP

MOSFET N-CH 55V 100A SOT429

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 226nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque6.416
MOSFET (Metal Oxide)
55V
100A (Tc)
4.5V, 10V
2V @ 1mA
226nC @ 5V
13000pF @ 25V
±15V
-
300W (Tc)
4.2 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PSMN004-36B,118
NXP

MOSFET N-CH 36V 75A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 36V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 20V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque5.504
MOSFET (Metal Oxide)
36V
75A (Tc)
4.5V, 10V
2V @ 1mA
97nC @ 5V
6000pF @ 20V
±15V
-
230W (Tc)
4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot PMR780SN,115
NXP

MOSFET N-CH 60V 0.55A SOT416

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 530mW (Tc)
  • Rds On (Max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-75
  • Package / Case: SC-75, SOT-416
pacote: SC-75, SOT-416
Estoque142.200
MOSFET (Metal Oxide)
60V
550mA (Ta)
4.5V, 10V
3V @ 250µA
1.05nC @ 10V
23pF @ 30V
±20V
-
530mW (Tc)
920 mOhm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-75
SC-75, SOT-416
PMN45EN,165
NXP

MOSFET N-CH 30V 5.2A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 495pF @ 25V
  • Vgs (Max): 20V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
pacote: SC-74, SOT-457
Estoque3.552
MOSFET (Metal Oxide)
30V
5.2A (Tc)
4.5V, 10V
2V @ 1mA
6.1nC @ 4.5V
495pF @ 25V
20V
-
1.75W (Tc)
40 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
PMN28UN,165
NXP

MOSFET N-CH 12V 5.7A 6TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.75W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SC-74, SOT-457
pacote: SC-74, SOT-457
Estoque6.096
MOSFET (Metal Oxide)
12V
5.7A (Tc)
1.8V, 4.5V
700mV @ 1mA
10.1nC @ 4.5V
740pF @ 10V
±8V
-
1.75W (Tc)
34 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SC-74, SOT-457
PMG370XN,115
NXP

MOSFET N-CH 30V 0.96A 6TSSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.65nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 690mW (Tc)
  • Rds On (Max) @ Id, Vgs: 440 mOhm @ 200mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSSOP
  • Package / Case: 6-TSSOP, SC-88, SOT-363
pacote: 6-TSSOP, SC-88, SOT-363
Estoque5.024
MOSFET (Metal Oxide)
30V
960mA (Ta)
2.5V, 4.5V
1.5V @ 250µA
0.65nC @ 4.5V
37pF @ 25V
±12V
-
690mW (Tc)
440 mOhm @ 200mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP
6-TSSOP, SC-88, SOT-363
PHX8NQ11T,127
NXP

MOSFET N-CH 110V 7.5A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque7.936
MOSFET (Metal Oxide)
110V
7.5A (Tc)
10V
4V @ 1mA
14.7nC @ 10V
360pF @ 25V
±20V
-
27.7W (Tc)
180 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
PHX45NQ11T,127
NXP

MOSFET N-CH 110V 30.4A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 30.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque2.256
MOSFET (Metal Oxide)
110V
30.4A (Tc)
10V
4V @ 1mA
61nC @ 10V
2600pF @ 25V
±20V
-
62.5W (Tc)
25 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
PHX34NQ11T,127
NXP

MOSFET N-CH 110V 24.8A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 56.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque5.392
MOSFET (Metal Oxide)
110V
24.8A (Tc)
10V
4V @ 1mA
40nC @ 10V
1700pF @ 25V
±20V
-
56.8W (Tc)
40 mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
PHX27NQ11T,127
NXP

MOSFET N-CH 110V 20.8A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 20.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque6.272
MOSFET (Metal Oxide)
110V
20.8A (Tc)
10V
4V @ 1mA
30nC @ 10V
1240pF @ 25V
±20V
-
50W (Tc)
50 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
PHX23NQ11T,127
NXP

MOSFET N-CH 110V 16A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque4.288
MOSFET (Metal Oxide)
110V
16A (Tc)
10V
4V @ 1mA
22nC @ 10V
830pF @ 25V
±20V
-
41.6W (Tc)
70 mOhm @ 13A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
PHX20N06T,127
NXP

MOSFET N-CH 55V 12.9A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 12.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque6.416
MOSFET (Metal Oxide)
55V
12.9A (Tc)
10V
4V @ 1mA
9.8nC @ 10V
320pF @ 25V
±20V
-
23W (Tc)
75 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
PHX18NQ11T,127
NXP

MOSFET N-CH 110V 12.5A SOT186A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 110V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 635pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 31.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
pacote: TO-220-3 Full Pack, Isolated Tab
Estoque4.224
MOSFET (Metal Oxide)
110V
12.5A (Tc)
10V
4V @ 1mA
21nC @ 10V
635pF @ 25V
±20V
-
31.2W (Tc)
90 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
PHW80NQ10T,127
NXP

MOSFET N-CH 100V 80A SOT429

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4720pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 263W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque7.360
MOSFET (Metal Oxide)
100V
80A (Tc)
10V
4V @ 1mA
109nC @ 10V
4720pF @ 25V
±20V
-
263W (Tc)
15 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
PHU78NQ03LT,127
NXP

MOSFET N-CH 25V 75A SOT533

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque2.432
MOSFET (Metal Oxide)
25V
75A (Tc)
5V, 10V
2V @ 1mA
11nC @ 4.5V
970pF @ 12V
±20V
-
107W (Tc)
9 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
PHU66NQ03LT,127
NXP

MOSFET N-CH 25V 66A SPT533

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque6.416
MOSFET (Metal Oxide)
25V
66A (Tc)
5V, 10V
2V @ 1mA
12nC @ 5V
860pF @ 25V
±20V
-
93W (Tc)
10.5 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA