Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH TO-252-3
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.072 |
|
MOSFET (Metal Oxide) | 80V | 90A (Tc) | 6V, 10V | 3.8V @ 65µA | 53nC @ 10V | 3800pF @ 40V | ±20V | - | 125W (Tc) | 4.6 mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 79A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque390.000 |
|
MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 4V @ 100µA | 69nC @ 10V | 2290pF @ 50V | ±20V | - | 110W (Tc) | 8.4 mOhm @ 47A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.560 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 150µA | 96nC @ 10V | 2860pF @ 25V | ±20V | - | 215W (Tc) | 7.7 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque125.964 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | - | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | - | - | - | 27 mOhm @ 25A, 10V | - | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 55V 47A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque61.092 |
|
MOSFET (Metal Oxide) | 55V | 47A (Tc) | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | - | 3.8W (Ta), 110W (Tc) | 22 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
LOW POWER_LEGACY
|
pacote: - |
Estoque5.728 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 120V 75A TO251-3
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque7.264 |
|
MOSFET (Metal Oxide) | 120V | 75A (Tc) | 10V | 4V @ 83µA | 65nC @ 10V | 4310pF @ 60V | ±20V | - | 136W (Tc) | 11 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET N-CH 30V 29A 8VQFN
|
pacote: 8-PowerVDFN |
Estoque432.600 |
|
MOSFET (Metal Oxide) | 30V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.35V @ 100µA | 55nC @ 10V | 3635pF @ 25V | ±20V | - | 3.6W (Ta), 104W (Tc) | 2.5 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 150A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque7.008 |
|
MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 47nC @ 4.5V | 4170pF @ 15V | ±20V | - | 140W (Tc) | 3.8 mOhm @ 38A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N CH 40V 14A 8-SO
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque31.260 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta) | 7V | 2V @ 250µA | 100nC @ 7V | 3520pF @ 25V | ±8V | - | 2.5W (Ta) | 10 mOhm @ 14A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 40V 95A
|
pacote: TO-220-3 Full Pack |
Estoque4.928 |
|
MOSFET (Metal Oxide) | 40V | 95A (Tc) | 10V | 3.9V @ 100µA | 132nC @ 10V | 4549pF @ 25V | ±20V | - | 42W (Tc) | 2.5 mOhm @ 57A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET P-CH 30V 80A TO263-3
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.640 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 4V @ 253µA | 130nC @ 10V | 10300pF @ 25V | ±20V | - | 137W (Tc) | 4.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 40V 17A DIRECTFET
|
pacote: DirectFET? Isometric M2 |
Estoque5.488 |
|
MOSFET (Metal Oxide) | 40V | 17A (Ta) | 10V | 4V @ 100µA | 72nC @ 10V | 2545pF @ 25V | ±20V | - | 2.5W (Ta), 46W (Tc) | 4.9 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET? M2 | DirectFET? Isometric M2 |
||
Infineon Technologies |
MOSFET N-CH 20V 100A TDSON-8
|
pacote: 8-PowerTDFN |
Estoque5.808 |
|
MOSFET (Metal Oxide) | 20V | 30A (Ta), 100A (Tc) | 2.5V, 4.5V | 1.2V @ 350µA | 85nC @ 4.5V | 13000pF @ 10V | ±12V | - | 2.8W (Ta), 104W (Tc) | 1.95 mOhm @ 50A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N CH 100V 11A PQFN 5X6
|
pacote: 8-TQFN Exposed Pad |
Estoque3.264 |
|
MOSFET (Metal Oxide) | 100V | 11A (Ta), 58A (Tc) | 10V | 4V @ 100µA | 87nC @ 10V | 3240pF @ 25V | ±20V | - | 3.6W (Ta), 104W (Tc) | 13.5 mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-TQFN Exposed Pad |
||
Infineon Technologies |
MOSFET N-CHANNEL_100+
|
pacote: - |
Estoque5.328 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CHANNEL_100+
|
pacote: - |
Estoque5.440 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 87A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.360 |
|
MOSFET (Metal Oxide) | 40V | 56A (Tc) | 10V | 4V @ 250µA | 71nC @ 10V | 2150pF @ 25V | ±20V | - | 140W (Tc) | 9.2 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque2.528 |
|
MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 4V @ 250µA | 60nC @ 10V | 1360pF @ 25V | ±20V | - | 110W (Tc) | 23 mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 600V TO220-3
|
pacote: TO-220-3 Full Pack |
Estoque7.424 |
|
MOSFET (Metal Oxide) | 600V | 19.3A (Tc) | 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | ±20V | Super Junction | 32W (Tc) | 280 mOhm @ 6.5A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
DIFFERENTIATED MOSFETS
|
pacote: - |
Estoque7.760 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 28A 8VQFN
|
pacote: 8-VQFN |
Estoque5.056 |
|
MOSFET (Metal Oxide) | 40V | 28A (Ta), 100A (Tc) | 10V | 4V @ 150µA | 110nC @ 10V | 4490pF @ 20V | ±20V | - | 3.6W (Ta), 156W (Tc) | 2.6 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-VQFN |
||
Infineon Technologies |
MOSFET N-CHANNEL_30/40V
|
pacote: - |
Estoque3.152 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 55V 31A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque28.536 |
|
MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1200pF @ 25V | ±20V | - | 3.8W (Ta), 110W (Tc) | 60 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 100V 23A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque6.400 |
|
MOSFET (Metal Oxide) | 100V | 23A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 1450pF @ 25V | ±20V | - | 3.1W (Ta), 110W (Tc) | 117 mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
LOW POWER_NEW
|
pacote: - |
Estoque6.048 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 30V 80A TO263-3
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.240 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 253µA | 160nC @ 10V | 11300pF @ 25V | +5V, -16V | - | 137W (Tc) | 4.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 10A 8SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque23.928 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.04V @ 250µA | 92nC @ 10V | 1700pF @ 25V | ±20V | - | 2.5W (Ta) | 20 mOhm @ 5.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |