Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N CH 100V 35A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.400 |
|
MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 4V @ 50µA | 59nC @ 10V | 1690pF @ 25V | ±20V | - | 91W (Tc) | 28.5 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3
|
pacote: TO-220-3 |
Estoque7.344 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 180µA | 110nC @ 10V | 3400pF @ 25V | ±20V | - | 250W (Tc) | 6.6 mOhm @ 68A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 100A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque416.832 |
|
MOSFET (Metal Oxide) | 20V | 100A (Tc) | 2.5V, 4.5V | 1.1V @ 50µA | 72nC @ 4.5V | 3770pF @ 10V | ±12V | - | 63W (Tc) | 4 mOhm @ 21A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CHANNEL_100+
|
pacote: - |
Estoque4.576 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 30V 140A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.160 |
|
MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 50nC @ 4.5V | 4010pF @ 15V | ±20V | - | 140W (Tc) | 4.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
CONSUMER
|
pacote: - |
Estoque7.040 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 100V 33A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque6.480 |
|
MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 4V @ 250µA | 71nC @ 10V | 1960pF @ 25V | ±20V | - | 130W (Tc) | 44 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 25V 170A WDSON
|
pacote: 3-WDSON |
Estoque4.992 |
|
MOSFET (Metal Oxide) | 25V | 170A (Tc) | 4.5V, 10V | 2V @ 250µA | 82nC @ 10V | 5852pF @ 12V | ±20V | - | 2.8W (Ta), 57W (Tc) | 1.2 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M? | 3-WDSON |
||
Infineon Technologies |
MOSFET N-CH 60V 7A 8SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque48.000 |
|
MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4.5V, 10V | 3V @ 250µA | 31nC @ 4.5V | 1740pF @ 25V | ±20V | - | 2.5W (Ta) | 26 mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.880 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | ±16V | - | 110W (Tc) | 27 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
pacote: - |
Estoque7.328 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
LOW POWER_LEGACY
|
pacote: - |
Estoque7.520 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.992 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 90µA | 80nC @ 10V | 5200pF @ 25V | ±20V | - | 136W (Tc) | 3.6 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 560V 7.6A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque745.380 |
|
MOSFET (Metal Oxide) | 560V | 7.6A (Tc) | 10V | 3.9V @ 350µA | 32nC @ 10V | 750pF @ 25V | ±20V | - | 83W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH TO-252-3
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque2.928 |
|
MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 3.3V @ 50µA | 44nC @ 10V | 3400pF @ 30V | ±20V | - | 107W (Tc) | 3.3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque3.600 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 250µA | 44nC @ 10V | 1380pF @ 25V | ±20V | - | 110W (Tc) | 14.5 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 100V 50A TO262-3
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque5.792 |
|
MOSFET (Metal Oxide) | 100V | 50A (Tc) | 4.5V, 10V | 2.4V @ 60µA | 64nC @ 10V | 4180pF @ 25V | ±20V | - | 100W (Tc) | 15.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.088 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4V @ 65µA | 60nC @ 10V | 3900pF @ 25V | ±20V | - | 115W (Tc) | 4.3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque7.616 |
|
MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 3.5V @ 310µA | 28nC @ 10V | 710pF @ 100V | ±20V | - | 83W (Tc) | 1.2 Ohm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 150V 21A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque58.560 |
|
MOSFET (Metal Oxide) | 150V | 21A (Tc) | 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | ±20V | - | 3.8W (Ta), 94W (Tc) | 82 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO220
|
pacote: TO-220-3 |
Estoque7.952 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO220
|
pacote: TO-220-3 |
Estoque3.584 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO263
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.256 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque5.296 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 63W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO220
|
pacote: TO-220-3 Full Pack |
Estoque7.536 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | ±20V | - | 28W (Tc) | 600 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 100V 42A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque13.284 |
|
MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 4V @ 250µA | 100nC @ 10V | 2930pF @ 25V | ±20V | - | 140W (Tc) | 18 mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB
|
pacote: TO-220-3 |
Estoque144.180 |
|
MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 3V @ 250µA | 36nC @ 5V | 1620pF @ 25V | ±16V | - | 80W (Tc) | 13.5 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 42A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.440 |
|
MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 4V @ 50µA | 51nC @ 10V | 1440pF @ 25V | ±20V | - | 110W (Tc) | 22 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |