Vishay Siliconix Produtos

2N5547JTX01

Vishay Siliconix

JFET N-CH 50V TO-71

• FET Type: -
• Voltage - Breakdown (V(BR)GSS): -
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): -
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Resistance - RDS(On): -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-71-6
• Supplier Device Package: TO-71

pacote: TO-71-6

TP0202K-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 385MA SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 350mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

SUM70N03-09CP-E3

Vishay Siliconix

MOSFET N-CH 30V 70A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.75W (Ta), 93W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2Pak)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI7425DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 8.3A PPAK 1212-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

pacote: PowerPAK? 1212-8

SI7402DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 13A PPAK 1212-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 850mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? 1212-8
• Package / Case: PowerPAK? 1212-8

pacote: PowerPAK? 1212-8

SI5433BDC-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 4.8A 1206-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 1206-8 ChipFET?
• Package / Case: 8-SMD, Flat Lead

pacote: 8-SMD, Flat Lead

SI1013R-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 350MA SC-75A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75A
• Package / Case: SC-75A

pacote: SC-75A

IRFI734GPBF

Vishay Siliconix

MOSFET N-CH 450V 3.4A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

pacote: TO-220-3 Full Pack, Isolated Tab

IRFR9014NTRL

Vishay Siliconix

MOSFET P-CH 60V 5.1A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

IRLZ14S

Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF9520S

Vishay Siliconix

MOSFET P-CH 100V 6.8A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFPC60

Vishay Siliconix

MOSFET N-CH 600V 16A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 280W (Tc)
• Rds On (Max) @ Id, Vgs: 400 mOhm @ 9.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

pacote: TO-247-3

SQJ409EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 40V 60A SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

pacote: PowerPAK? SO-8

SI3457CDV-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 5.1A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 3W (Tc)
• Rds On (Max) @ Id, Vgs: 74 mOhm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacote: SOT-23-6 Thin, TSOT-23-6

IRFU9024PBF

Vishay Siliconix

MOSFET P-CH 60V 8.8A I-PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251AA
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacote: TO-251-3 Short Leads, IPak, TO-251AA

SI3457CDV-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 5.1A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 3W (Tc)
• Rds On (Max) @ Id, Vgs: 74 mOhm @ 4.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

pacote: SOT-23-6 Thin, TSOT-23-6

SI1077X-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V SC89-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31.1nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 1.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-89-6
• Package / Case: SOT-563, SOT-666

pacote: SOT-563, SOT-666

SI2338DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 6A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

SI5943DU-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 6A 8PWRPAK

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 6V
• Power - Max: 8.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? ChipFET? Dual
• Supplier Device Package: PowerPAK? ChipFet Dual

pacote: PowerPAK? ChipFET? Dual

SI4830CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
• Power - Max: 2.9W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

pacote: 8-SOIC (0.154", 3.90mm Width)

SIP21107DVP-12-E3

Vishay Siliconix

IC REG LINEAR 1.2V 150MA TSC75-6

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 85µA
• PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
• Control Features: Enable, Power Good
• Protection Features: Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? TSC-75-6
• Supplier Device Package: PowerPAK? TSC75-6

pacote: PowerPAK? TSC-75-6

DG9262DY

Vishay Siliconix

IC SWITCH DUAL SPST 8SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 2
• On-State Resistance (Max): 60 Ohm
• Channel-to-Channel Matching (ΔRon): 400 mOhm
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 75ns, 50ns
• -3db Bandwidth: -
• Charge Injection: 2pC
• Channel Capacitance (CS(off), CD(off)): 7pF
• Current - Leakage (IS(off)) (Max): 100pA
• Crosstalk: -90dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

DG611DY

Vishay Siliconix

IC SWITCH QUAD SPST 16-SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 45 Ohm
• Channel-to-Channel Matching (ΔRon): 2 Ohm
• Voltage - Supply, Single (V+): 10 V ~ 18 V
• Voltage - Supply, Dual (V±): ±10 V ~ 15 V
• Switch Time (Ton, Toff) (Max): 35ns, 25ns
• -3db Bandwidth: 500MHz
• Charge Injection: 4pC
• Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -87dB @ 5MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

pacote: 16-SOIC (0.154", 3.90mm Width)

DG417BAK

Vishay Siliconix

IC SWITCH SPST 8CDIP

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 35 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 62ns, 53ns
• -3db Bandwidth: -
• Charge Injection: 38pC
• Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 8-CDIP (0.300", 7.62mm)
• Supplier Device Package: 8-CERDIP

pacote: 8-CDIP (0.300", 7.62mm)

DG412LAK

Vishay Siliconix

IC SWITCH QUAD SPST 16-DIP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 17 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): ±3 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 19ns, 12ns
• -3db Bandwidth: 280MHz
• Charge Injection: 5pC
• Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -95dB @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TA)
• Package / Case: 16-CDIP (0.300", 7.62mm)
• Supplier Device Package: 16-CERDIP

pacote: 16-CDIP (0.300", 7.62mm)

DG412HSDY-T1

Vishay Siliconix

IC SWITCH QUAD SPST 16-SOIC

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 35 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 105ns, 80ns
• -3db Bandwidth: -
• Charge Injection: 22pC
• Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -88dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

pacote: 16-SOIC (0.154", 3.90mm Width)

DG2714DL-T1-GE3

Vishay Siliconix

IC SWITCH SGL SPDT LV SC70-6

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 1
• On-State Resistance (Max): 1.2 Ohm
• Channel-to-Channel Matching (ΔRon): 60 mOhm (Max)
• Voltage - Supply, Single (V+): 1.5 V ~ 3.6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 51ns, 33ns
• -3db Bandwidth: -
• Charge Injection: 9pC
• Channel Capacitance (CS(off), CD(off)): 30pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -64dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6

pacote: 6-TSSOP, SC-88, SOT-363

DG9432DQ-T1-E3

Vishay Siliconix

IC SWITCH DUAL SPST 8MSOP

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 2
• On-State Resistance (Max): 30 Ohm
• Channel-to-Channel Matching (ΔRon): 300 mOhm
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 35ns, 18ns
• -3db Bandwidth: -
• Charge Injection: 0.36pC
• Channel Capacitance (CS(off), CD(off)): 7.5pF, 7.8pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -96dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

DG2003DQ-T1-E3

Vishay Siliconix

IC SWITCH 2 X SPST 2.5 OHM 8MSOP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 2
• On-State Resistance (Max): 2.5 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 1.8 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 28ns, 22ns
• -3db Bandwidth: -
• Charge Injection: 1pC
• Channel Capacitance (CS(off), CD(off)): 51pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -67dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: 8-MSOP

pacote: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

DG508BEJ-E3

Vishay Siliconix

IC MUX ANA DUAL 8/4CH 16DIP

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 380 Ohm
• Channel-to-Channel Matching (ΔRon): 10 Ohm
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 250ns, 240ns
• -3db Bandwidth: 250MHz
• Charge Injection: 2pC
• Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -88dB @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-PDIP

pacote: 16-DIP (0.300", 7.62mm)