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ON Semiconductor Produtos - Transistores - FET, MOSFET - Simples

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Imagem
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Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NTMFS4C032NT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.46W (Ta), 21.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.35 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: 8-PowerTDFN, 5 Leads
Estoque6.528
MOSFET (Metal Oxide)
30V
13A (Ta), 38A (Tc)
4.5V, 10V
2.1V @ 250µA
15.2nC @ 10V
770pF @ 15V
±20V
-
2.46W (Ta), 21.6W (Tc)
7.35 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
CPH5871-TL-W
ON Semiconductor

MOSFET N-CH 30V 3.5A CPH5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 900mW (Ta)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-CPH
  • Package / Case: SC-74A, SOT-753
pacote: SC-74A, SOT-753
Estoque5.376
MOSFET (Metal Oxide)
30V
3.5A (Ta)
1.8V, 4.5V
-
4.7nC @ 4.5V
430pF @ 10V
±12V
Schottky Diode (Isolated)
900mW (Ta)
52 mOhm @ 2A, 4.5V
-55°C ~ 125°C (TJ)
Surface Mount
5-CPH
SC-74A, SOT-753
hot NTLJS2103PTBG
ON Semiconductor

MOSFET P-CH 12V 3.5A 6-WDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 800mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 6V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacote: 6-WDFN Exposed Pad
Estoque671.532
MOSFET (Metal Oxide)
12V
3.5A (Ta)
1.2V, 4.5V
800mV @ 250µA
15nC @ 4.5V
1157pF @ 6V
±8V
-
700mW (Ta)
40 mOhm @ 3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN (2x2)
6-WDFN Exposed Pad
NTTFS4C05NTWG
ON Semiconductor

MOSFET N-CH 30V 75A U8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1988pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 820mW (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque5.184
MOSFET (Metal Oxide)
30V
12A (Ta), 75A (Tc)
4.5V, 10V
2.2V @ 250µA
31nC @ 10V
1988pF @ 15V
±20V
-
820mW (Ta), 33W (Tc)
3.6 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
NDD03N40ZT4G
ON Semiconductor

MOSFET N-CH 400V 2.1A DPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque7.536
MOSFET (Metal Oxide)
400V
2.1A (Tc)
10V
4.5V @ 50µA
6.6nC @ 10V
140pF @ 50V
±30V
-
37W (Tc)
3.4 Ohm @ 600mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot ATP101-TL-H
ON Semiconductor

MOSFET P-CH 30V 25A ATPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 13A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ATPAK
  • Package / Case: ATPAK (2 leads+tab)
pacote: ATPAK (2 leads+tab)
Estoque173.724
MOSFET (Metal Oxide)
30V
25A (Ta)
4.5V, 10V
-
18.5nC @ 10V
875pF @ 10V
±20V
-
30W (Tc)
30 mOhm @ 13A, 10V
150°C (TJ)
Surface Mount
ATPAK
ATPAK (2 leads+tab)
NVC3S5A51PLZT1G
ON Semiconductor

MOSFET P-CH 1.8A 60V CPH3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-CPH
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque3.552
MOSFET (Metal Oxide)
60V
1.8A (Ta)
4V, 10V
2.6V @ 1mA
6nC @ 10V
262pF @ 20V
±20V
-
1.2W (Ta)
250 mOhm @ 1A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
3-CPH
TO-236-3, SC-59, SOT-23-3
NTMFS4C028NT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.51W (Ta), 25.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.73 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: 8-PowerTDFN, 5 Leads
Estoque5.600
MOSFET (Metal Oxide)
30V
16.4A (Ta), 52A (Tc)
4.5V, 10V
2.1V @ 250µA
22.2nC @ 10V
1252pF @ 15V
±20V
-
2.51W (Ta), 25.5W (Tc)
4.73 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot PCP1402-TD-H
ON Semiconductor

MOSFET N-CH 250V 1.2A SOT89

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 600mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-89/PCP-2
  • Package / Case: TO-243AA
pacote: TO-243AA
Estoque32.028
MOSFET (Metal Oxide)
250V
1.2A (Ta)
10V
3.5V @ 1mA
4.2nC @ 10V
210pF @ 20V
±30V
-
3.5W (Tc)
2.4 Ohm @ 600mA, 10V
150°C (TJ)
Surface Mount
SOT-89/PCP-2
TO-243AA
NTMFS4C05NT3G
ON Semiconductor

MOSFET N-CH 30V 11.9A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 770mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacote: 8-PowerTDFN
Estoque3.152
MOSFET (Metal Oxide)
30V
11.9A (Ta)
4.5V, 10V
2.2V @ 250µA
14nC @ 4.5V
1972pF @ 15V
±20V
-
770mW (Ta)
3.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot NTD4860NT4G
ON Semiconductor

MOSFET N-CH 25V 10.4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1308pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque999.468
MOSFET (Metal Oxide)
25V
10.4A (Ta), 65A (Tc)
4.5V, 10V
2.5V @ 250µA
16.5nC @ 4.5V
1308pF @ 12V
±20V
-
1.28W (Ta), 50W (Tc)
7.5 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
hot NTLJS4114NTAG
ON Semiconductor

MOSFET N-CH 30V 3.6A 6WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WDFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad
pacote: 6-WDFN Exposed Pad
Estoque18.000
MOSFET (Metal Oxide)
30V
3.6A (Ta)
1.8V, 4.5V
1V @ 250µA
13nC @ 4.5V
650pF @ 15V
±12V
-
700mW (Ta)
35 mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-WDFN (2x2)
6-WDFN Exposed Pad
ECH8315-TL-W
ON Semiconductor

MOSFET P-CH 30V 7.5A ECH8

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-28FL/ECH8
  • Package / Case: 8-SMD, Flat Lead
pacote: 8-SMD, Flat Lead
Estoque4.032
MOSFET (Metal Oxide)
30V
7.5A (Ta)
4V, 10V
2.6V @ 1mA
18nC @ 10V
875pF @ 10V
±20V
-
1.5W (Ta)
25 mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
SOT-28FL/ECH8
8-SMD, Flat Lead
SFT1452-TL-W
ON Semiconductor

MOSFET N-CH 250V 3A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK/TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque6.096
MOSFET (Metal Oxide)
250V
3A (Ta)
10V
4.5V @ 1mA
4.2nC @ 10V
210pF @ 20V
±30V
-
1W (Ta), 26W (Tc)
2.4 Ohm @ 1.5A, 10V
150°C (TJ)
Surface Mount
DPAK/TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
SFT1452-W
ON Semiconductor

MOSFET N-CH 250V 3A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK/TP
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque3.376
MOSFET (Metal Oxide)
250V
3A (Ta)
10V
4.5V @ 1mA
4.2nC @ 10V
210pF @ 20V
±30V
-
1W (Ta), 26W (Tc)
2.4 Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
IPAK/TP
TO-251-3 Short Leads, IPak, TO-251AA
NTLUS3A18PZCTCG
ON Semiconductor

MOSFET P-CH 20V 8.2A UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (2x2)
  • Package / Case: 6-UDFN Exposed Pad
pacote: 6-UDFN Exposed Pad
Estoque6.944
MOSFET (Metal Oxide)
20V
5.1A (Ta)
1.5V, 4.5V
1V @ 250µA
28nC @ 4.5V
2240pF @ 15V
±8V
-
-
18 mOhm @ 7A, 4.5V
-
Surface Mount
6-UDFN (2x2)
6-UDFN Exposed Pad
NTLUS3A18PZTBG
ON Semiconductor

MOSFET P-CH 20V 8.2A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (2x2)
  • Package / Case: 6-UDFN Exposed Pad
pacote: 6-UDFN Exposed Pad
Estoque5.904
MOSFET (Metal Oxide)
20V
5.1A (Ta)
1.5V, 4.5V
1V @ 250µA
28nC @ 4.5V
2240pF @ 15V
±8V
-
700mW (Ta)
18 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (2x2)
6-UDFN Exposed Pad
hot NTMFS4927NCT3G
ON Semiconductor

MOSFET N-CH 30V 8SOFL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW (Ta), 20.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: 8-PowerTDFN, 5 Leads
Estoque6.816
MOSFET (Metal Oxide)
30V
7.9A (Ta), 38A (Tc)
4.5V, 10V
2.2V @ 250µA
8nC @ 4.5V
913pF @ 15V
±20V
-
920mW (Ta), 20.8W (Tc)
7.3 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4927NCT1G
ON Semiconductor

MOSFET N-CH 30V 8SOFL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW (Ta), 20.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: 8-PowerTDFN, 5 Leads
Estoque7.344
MOSFET (Metal Oxide)
30V
7.9A (Ta), 38A (Tc)
4.5V, 10V
2.2V @ 250µA
8nC @ 4.5V
913pF @ 15V
±20V
-
920mW (Ta), 20.8W (Tc)
7.3 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTLUS3A90PZTBG
ON Semiconductor

MOSFET P-CH 20V 3A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-PowerUFDFN
pacote: 6-PowerUFDFN
Estoque3.552
MOSFET (Metal Oxide)
20V
2.6A (Ta)
1.5V, 4.5V
1V @ 250µA
12.3nC @ 4.5V
950pF @ 10V
±8V
-
600mW (Ta)
62 mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-PowerUFDFN
hot NTLUF4189NZTAG
ON Semiconductor

MOSFET N-CH 30V 1.2A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (1.6x1.6)
  • Package / Case: 6-UFDFN Exposed Pad
pacote: 6-UFDFN Exposed Pad
Estoque111.420
MOSFET (Metal Oxide)
30V
1.2A (Ta)
2.5V, 4.5V
1.5V @ 250µA
3nC @ 4.5V
95pF @ 15V
±8V
Schottky Diode (Isolated)
500mW (Ta)
200 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (1.6x1.6)
6-UFDFN Exposed Pad
hot NTMFS4C09NBT1G
ON Semiconductor

MOSFET N-CH 30V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque8.100
MOSFET (Metal Oxide)
30V
-
-
-
-
1252pF @ 15V
-
-
760mW (Ta)
-
-55°C ~ 150°C (TJ)
Surface Mount
-
-
hot NTMFS4C09NAT1G
ON Semiconductor

MOSFET N-CH 30V 9A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: 8-PowerTDFN, 5 Leads
Estoque13.680
MOSFET (Metal Oxide)
30V
9A (Ta), 52A (Tc)
-
2.1V @ 250µA
1.9nC @ 4.5V
1252pF @ 15V
-
-
760mW (Ta)
5.8 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
hot NTGS3433T1G
ON Semiconductor

MOSFET P-CH 12V 2.35A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 5V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.3A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
pacote: SOT-23-6
Estoque861.036
MOSFET (Metal Oxide)
12V
2.35A (Ta)
2.5V, 4.5V
1.5V @ 250µA
15nC @ 4.5V
550pF @ 5V
±8V
-
500mW (Ta)
75 mOhm @ 3.3A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-TSOP
SOT-23-6
hot NTD4979N-35G
ON Semiconductor

MOSFET N-CH 30V 9.4A IPAK TRIMME

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 837pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.38W (Ta), 26.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
pacote: TO-251-3 Short Leads, IPak, TO-251AA
Estoque10.080
MOSFET (Metal Oxide)
30V
9.4A (Ta), 41A (Tc)
4.5V, 10V
2.5V @ 250µA
16.5nC @ 10V
837pF @ 15V
±20V
-
1.38W (Ta), 26.3W (Tc)
9 mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
hot NTMD4184PFR2G
ON Semiconductor

MOSFET P-CH 30V 2.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 770mW (Ta)
  • Rds On (Max) @ Id, Vgs: 95 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque1.255.200
MOSFET (Metal Oxide)
30V
2.3A (Ta)
4.5V, 10V
3V @ 250µA
4.2nC @ 4.5V
360pF @ 10V
±20V
Schottky Diode (Isolated)
770mW (Ta)
95 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC
8-SOIC (0.154", 3.90mm Width)
hot NTTFS4930NTWG
ON Semiconductor

MOSFET N-CH 30V 23A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
pacote: 8-PowerWDFN
Estoque72.012
MOSFET (Metal Oxide)
30V
4.5A (Ta), 23A (Tc)
4.5V, 10V
2.2V @ 250µA
5.5nC @ 4.5V
476pF @ 15V
±20V
-
790mW (Ta), 20.2W (Tc)
23 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
NTMFS4926NT3G
ON Semiconductor

MOSFET N-CH 30V 44A SO-8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
pacote: 8-PowerTDFN, 5 Leads
Estoque2.944
MOSFET (Metal Oxide)
30V
9A (Ta), 44A (Tc)
4.5V, 10V
2.2V @ 250µA
17.3nC @ 10V
1004pF @ 15V
±20V
-
920mW (Ta), 21.6W (Tc)
7 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads