Página 18 - ON Semiconductor Produtos - Transistores - FET, MOSFET - Simples

NTMFS4C250NT1G

ON Semiconductor

MOSFET N-CH 30V 11A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

pacote: 8-PowerTDFN

Estoque3.616

MOSFET (Metal Oxide)

30V

11A (Ta), 69A (Tc)

4.5V, 10V

2.1V @ 250µA

2.6nC @ 4.5V

1683pF @ 15V

±20V

-

770mW (Ta)

4 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTMFS4C760NT1G

ON Semiconductor

MOSFET N-CH 30V 46A SO8FL

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque2.592

-

MCH6351-TL-W

ON Semiconductor

MOSFET P-CH 12V 9A MCPH6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 6V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 16.9 mOhm @ 4.5A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-MCPH
Package / Case: 6-SMD, Flat Leads

pacote: 6-SMD, Flat Leads

Estoque3.344

MOSFET (Metal Oxide)

12V

9A (Ta)

1.5V, 4.5V

-

20.5nC @ 4.5V

2200pF @ 6V

±10V

-

1.5W (Ta)

16.9 mOhm @ 4.5A, 4.5V

150°C (TJ)

Surface Mount

6-MCPH

6-SMD, Flat Leads

MVGSF1N03LT1G

ON Semiconductor

MOSFET N-CH 30V 1.6A SOT-23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

Estoque4.480

MOSFET (Metal Oxide)

30V

1.6A (Ta)

4.5V, 10V

2.4V @ 250µA

-

140pF @ 5V

±20V

-

420mW (Ta)

100 mOhm @ 1.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

NTLUS3A40PZTBG

ON Semiconductor

MOSFET P-CH 20V 4A 6UDFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (2x2)
Package / Case: 6-UDFN Exposed Pad

pacote: 6-UDFN Exposed Pad

Estoque4.704

MOSFET (Metal Oxide)

20V

4A (Ta)

1.5V, 4.5V

1V @ 250µA

29nC @ 4.5V

2600pF @ 15V

±8V

-

700mW (Ta)

29 mOhm @ 6.4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN (2x2)

6-UDFN Exposed Pad

NTHS4166NT1G

ON Semiconductor

MOSFET N-CH 30V 4.9A CHIPFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: ChipFET?
Package / Case: 8-SMD, Flat Lead

pacote: 8-SMD, Flat Lead

Estoque8.652

MOSFET (Metal Oxide)

30V

4.9A (Ta)

4.5V, 10V

2.3V @ 250µA

18nC @ 10V

900pF @ 15V

±20V

-

800mW (Ta)

22 mOhm @ 4.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

ChipFET?

8-SMD, Flat Lead

NTMFS4C09NT1G

ON Semiconductor

MOSFET N-CH 30V 9A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

pacote: 8-PowerTDFN

Estoque48.360

MOSFET (Metal Oxide)

30V

9A (Ta)

4.5V, 10V

2.1V @ 250µA

10.9nC @ 4.5V

1252pF @ 15V

±20V

-

760mW (Ta), 25.5W (Tc)

5.8 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTMFS4985NFT3G

ON Semiconductor

MOSFET N-CH 30V 65A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.63W (Ta), 22.73W (Tc)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

pacote: 8-PowerTDFN

Estoque2.880

MOSFET (Metal Oxide)

30V

17.5A (Ta), 65A (Tc)

4.5V, 10V

2.3V @ 1mA

30.5nC @ 10V

2100pF @ 15V

±20V

-

1.63W (Ta), 22.73W (Tc)

3.4 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

MCH6437-TL-E

ON Semiconductor

MOSFET N-CH 20V 7A MCPH6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 4A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-MCPH
Package / Case: 6-SMD, Flat Leads

pacote: 6-SMD, Flat Leads

Estoque69.000

MOSFET (Metal Oxide)

20V

7A (Ta)

1.8V, 4.5V

-

8.4nC @ 4.5V

660pF @ 10V

±12V

-

1.5W (Ta)

24 mOhm @ 4A, 4.5V

150°C (TJ)

Surface Mount

6-MCPH

6-SMD, Flat Leads

NTLUS3A90PZTAG

ON Semiconductor

MOSFET P-CH 20V 2.6A 6UDFN

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 62 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFN (1.6x1.6)
Package / Case: 6-PowerUFDFN

pacote: 6-PowerUFDFN

Estoque122.340

MOSFET (Metal Oxide)

20V

2.6A (Ta)

1.5V, 4.5V

1V @ 250µA

12.3nC @ 4.5V

950pF @ 10V

±8V

-

600mW (Ta)

62 mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN (1.6x1.6)

6-PowerUFDFN

MCH3486-TL-W

ON Semiconductor

MOSFET N-CH 60V 2A MCPH3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70FL/MCPH3
Package / Case: 3-SMD, Flat Leads

pacote: 3-SMD, Flat Leads

Estoque2.704

MOSFET (Metal Oxide)

60V

2A (Ta)

4V, 10V

2.6V @ 1mA

7nC @ 10V

310pF @ 20V

±20V

-

1W (Ta)

137 mOhm @ 1A, 10V

150°C (TJ)

Surface Mount

SC-70FL/MCPH3

3-SMD, Flat Leads

MCH6344-TL-H

ON Semiconductor

MOSFET P-CH 30V 2A MCPH6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 172pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-MCPH
Package / Case: 6-SMD, Flat Leads

pacote: 6-SMD, Flat Leads

Estoque3.056

MOSFET (Metal Oxide)

30V

2A (Ta)

4V, 10V

-

3.9nC @ 10V

172pF @ 10V

±20V

-

800mW (Ta)

150 mOhm @ 1A, 10V

150°C (TJ)

Surface Mount

6-MCPH

6-SMD, Flat Leads

NTMFS4C09NBT3G

ON Semiconductor

MOSFET N-CH 30V SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque6.800

MOSFET (Metal Oxide)

30V

-

1252pF @ 15V

-

760mW (Ta)

-

-55°C ~ 150°C (TJ)

Surface Mount

-

NTMFS4C09NT3G

ON Semiconductor

MOSFET N-CH 30V 52A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

pacote: 8-PowerTDFN

Estoque4.048

MOSFET (Metal Oxide)

30V

9A (Ta)

4.5V, 10V

2.1V @ 250µA

10.9nC @ 4.5V

1252pF @ 15V

±20V

-

760mW (Ta), 25.5W (Tc)

5.8 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTTFS4C25NTAG

ON Semiconductor

MOSFET N-CH 30V 27A U8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 690mW (Ta), 20.2W (Tc)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN

pacote: 8-PowerWDFN

Estoque7.440

MOSFET (Metal Oxide)

30V

5A (Ta), 27A (Tc)

4.5V, 10V

2.2V @ 250µA

10.3nC @ 10V

500pF @ 15V

±20V

-

690mW (Ta), 20.2W (Tc)

17 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN (3.3x3.3)

8-PowerWDFN

CPH6442-TL-W

ON Semiconductor

MOSFET N-CH 60V 6A CPH6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-CPH
Package / Case: SOT-23-6 Thin, TSOT-23-6

pacote: SOT-23-6 Thin, TSOT-23-6

Estoque3.024

MOSFET (Metal Oxide)

60V

6A (Ta)

4V, 10V

2.6V @ 1mA

20nC @ 10V

1040pF @ 20V

±20V

-

1.6W (Ta)

43 mOhm @ 3A, 10V

150°C (TJ)

Surface Mount

6-CPH

SOT-23-6 Thin, TSOT-23-6

MCH6445-TL-W

ON Semiconductor

MOSFET N-CH 60V 4A MCPH6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-MCPH
Package / Case: 6-SMD, Flat Leads

pacote: 6-SMD, Flat Leads

Estoque3.552

MOSFET (Metal Oxide)

60V

4A (Ta)

4V, 10V

-

10nC @ 10V

505pF @ 20V

±20V

-

1.5W (Ta)

78 mOhm @ 2A, 10V

150°C (TJ)

Surface Mount

6-MCPH

6-SMD, Flat Leads

NTMFS4926NT1G

ON Semiconductor

MOSFET N-CH 30V 9A SO-8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

pacote: 8-PowerTDFN, 5 Leads

Estoque81.048

MOSFET (Metal Oxide)

30V

9A (Ta), 44A (Tc)

4.5V, 10V

2.2V @ 250µA

17.3nC @ 10V

1004pF @ 15V

±20V

-

920mW (Ta), 21.6W (Tc)

7 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

MCH3478-TL-W-Z

ON Semiconductor

MOSFET P-CH 30V 1.6A SC-70FL

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque2.992

-

1.8V, 4.5V

-

±12V

-

NVGS3443T1G

ON Semiconductor

MOSFET P-CH 20V 2A 6-TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 5V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6

pacote: SOT-23-6

Estoque156.180

MOSFET (Metal Oxide)

20V

3.1A (Ta)

-

1.5V @ 250µA

15nC @ 4.5V

565pF @ 5V

-

65 mOhm @ 4.4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-TSOP

SOT-23-6

NDDL01N60Z-1G

ON Semiconductor

MOSFET N-CH 600V 0.8A IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

pacote: TO-251-3 Short Leads, IPak, TO-251AA

Estoque5.536

MOSFET (Metal Oxide)

600V

800mA (Ta)

10V

4.5V @ 50µA

4.9nC @ 10V

92pF @ 25V

±30V

-

26W (Tc)

15 Ohm @ 400mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

IPAK (TO-251)

TO-251-3 Short Leads, IPak, TO-251AA

NDTL01N60ZT1G

ON Semiconductor

MOSFET N-CH 600V 0.25A SOT223-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223 (TO-261)
Package / Case: TO-261-4, TO-261AA

pacote: TO-261-4, TO-261AA

Estoque3.536

MOSFET (Metal Oxide)

600V

250mA (Tc)

10V

4.5V @ 50µA

4.9nC @ 10V

92pF @ 25V

±30V

-

2W (Tc)

15 Ohm @ 400mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223 (TO-261)

TO-261-4, TO-261AA

NDTL01N60ZT3G

ON Semiconductor

MOSFET N-CH 600V 0.25A SOT223-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223 (TO-261)
Package / Case: TO-261-4, TO-261AA

pacote: TO-261-4, TO-261AA

Estoque6.512

MOSFET (Metal Oxide)

600V

250mA (Tc)

10V

4.5V @ 50µA

4.9nC @ 10V

92pF @ 25V

±30V

-

2W (Tc)

15 Ohm @ 400mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223 (TO-261)

TO-261-4, TO-261AA

NTMFS4C10NT1G

ON Semiconductor

MOSFET N-CH 30V 8.2A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

pacote: 8-PowerTDFN

Estoque94.020

MOSFET (Metal Oxide)

30V

8.2A (Ta)

4.5V, 10V

2.2V @ 250µA

9.7nC @ 4.5V

987pF @ 15V

±20V

-

750mW (Ta), 23.6W (Tc)

6.95 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

NTMFS4C10NBT1G

ON Semiconductor

MOSFET N-CH 30V 8.2A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.51W (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

pacote: 8-PowerTDFN, 5 Leads

Estoque7.792

MOSFET (Metal Oxide)

30V

16.4A (Ta), 46A (Tc)

4.5V, 10V

2.2V @ 250µA

18.6nC @ 10V

987pF @ 15V

±20V

-

2.51W (Ta), 23.6W (Tc)

6.95 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

NTMFS4C10NAT3G

ON Semiconductor

MOSFET N-CH 30V 8.2A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 987pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.51W (Ta), 23.6W (Tc)
Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN, 5 Leads

pacote: 8-PowerTDFN, 5 Leads

Estoque6.592

MOSFET (Metal Oxide)

30V

16.4A (Ta), 46A (Tc)

4.5V, 10V

2.2V @ 250µA

18.6nC @ 10V

987pF @ 15V

±20V

-

2.51W (Ta), 23.6W (Tc)

6.95 mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN, 5 Leads

NTMFS4C10NAT1G

ON Semiconductor

MOSFET N-CH 30V 8.2A SO8FL

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque7.728

-

NTMFS4C06NAT1G

ON Semiconductor

MOSFET N-CH 30V 11A SO8FL

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque2.368

-