Infineon Technologies Produtos

IRG5U200SD12B

Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

• IGBT Type: -
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 320A
• Power - Max: 1430W
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 200A
• Current - Collector Cutoff (Max): 3mA
• Input Capacitance (Cies) @ Vce: 23nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 62 Module
• Supplier Device Package: POWIR? 62

pacote: POWIR? 62 Module

SIPC26N60S5X1SA1

Infineon Technologies

MOSFET COOL MOS SAWED WAFER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacote: -

BSP320SL6433HTMA1

Infineon Technologies

MOSFET N-CH 60V 2.9A SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

pacote: TO-261-4, TO-261AA

IRF520NSTRL

Infineon Technologies

MOSFET N-CH 100V 9.7A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPC302N10N3X1SA1

Infineon Technologies

MOSFET N-CH 100V BARE DIE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 302µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Sawn on foil
• Package / Case: Die

pacote: Die

IPC302NE7N3X1SA1

Infineon Technologies

MOSFET N-CH 75V BARE DIE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.8V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Sawn on foil
• Package / Case: Die

pacote: Die

IRL3803PBF

Infineon Technologies

MOSFET N-CH 30V 140A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacote: TO-220-3

IRFB7446GPBF

Infineon Technologies

MOSFET N CH 40V 120A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3183pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 99W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 70A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacote: TO-220-3

IRF6717MTRPBF

Infineon Technologies

MOSFET N-CH 25V 38A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 69nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 6750pF @ 13V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 96W (Tc)
• Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 38A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

pacote: DirectFET? Isometric MX

PTFC262808FVV1XWSA1

Infineon Technologies

RF MOSFET TRANSISTORS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

BSC0911NDATMA1

Infineon Technologies

MOSFET 2N-CH 25V 18A/30A TISON-8

• FET Type: 2 N-Channel (Dual) Asymmetrical
• FET Feature: Logic Level Gate, 4.5V Drive
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 18A, 30A
• Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
• Power - Max: 1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Supplier Device Package: PG-TISON-8

pacote: 8-PowerTDFN

BCR533E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 0.33W SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 100MHz
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

pacote: TO-236-3, SC-59, SOT-23-3

BA892H6127XTSA1

Infineon Technologies

DIODE RF SW 35V 100MA SCD80

• Diode Type: Standard - Single
• Voltage - Peak Reverse (Max): 35V
• Current - Max: 100mA
• Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
• Resistance @ If, F: 500 mOhm @ 10mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

pacote: SC-80

IRS25803DSPBF

Infineon Technologies

SEMICONDUCTOR OTHER

• Mode: Critical Conduction (CRM)
• Frequency - Switching: -
• Current - Startup: -
• Voltage - Supply: 470V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

IRS2983SPBF

Infineon Technologies

IC LED DRIVER OFFLINE 8SOIC

• Type: AC DC Offline Switcher
• Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 11.5V
• Voltage - Supply (Max): 18V
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -25°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

AUIR08152STR

Infineon Technologies

IC BUFFER GATE DRVR 8SOIC

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT
• Voltage - Supply: 13 V ~ 25 V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 10A, 10A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 50ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

IR25600SPBF

Infineon Technologies

IC DUAL MOSFET IGBT 8SO

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 6 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 2.3A, 3.3A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 15ns, 10ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

IR21844SPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 1.9A, 2.3A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 40ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

pacote: 14-SOIC (0.154", 3.90mm Width)

BTS5016SDAAUMA1

Infineon Technologies

IC PWR SW SMART HISIDE TO252-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 20 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 5.5A
• Rds On (Typ): 16 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
• Supplier Device Package: PG-TO252-5-11

pacote: TO-252-5, DPak (4 Leads + Tab), TO-252AD

S29PL032J55BFI070

Infineon Technologies

IC FLASH 32MBIT PARALLEL 48VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 32Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFBGA
• Supplier Device Package: 48-VFBGA (8.15x6.15)

pacote: -

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CY15V104QI-20BFXIT

Infineon Technologies

FRAM

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Mbit
• Memory Interface: SPI
• Clock Frequency: 20 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFLGA
• Supplier Device Package: 8-UFLGA (3.28x3.23)

pacote: -

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IR3828MTRPBF

Infineon Technologies

IC REG BUCK CTRLR PQFN

• Function: -
• Output Configuration: -
• Topology: -
• Output Type: -
• Number of Outputs: -
• Voltage - Input (Min): -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: -
• Synchronous Rectifier: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

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AIMZHN120R080M1TXKSA1

Infineon Technologies

SIC_DISCRETE

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
• Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
• Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
• Vgs (Max): +23V, -5V
• FET Feature: -
• Power Dissipation (Max): 169W (Tc)
• Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-4-14
• Package / Case: TO-247-4

pacote: -

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TDA387400000AUMA1

Infineon Technologies

IC REG BUCK ADJ 40A 36QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 3V
• Voltage - Input (Max): 17V
• Voltage - Output (Min/Fixed): 0.25V
• Voltage - Output (Max): 5.12V
• Current - Output: 40A
• Frequency - Switching: 400kHz ~ 2MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-PowerVFQFN
• Supplier Device Package: PG-IQFN-36-3

pacote: -

IAUC100N04S6N022ATMA1

Infineon Technologies

IAUC100N04S6N022ATMA1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3V @ 32µA
• Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2421 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 2.26mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

pacote: -

TC397XA256F300SBBKXUMA1

Infineon Technologies

IC MCU 32BIT 16MB FLASH 292LFBGA

• Core Processor: TriCore™
• Core Size: 32-Bit 6-Core
• Speed: 300MHz
• Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
• Peripherals: DMA, I2S, LVDS, PWM, WDT
• Number of I/O: -
• Program Memory Size: 16MB (16M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 1M x 8
• RAM Size: 6.75M x 8
• Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
• Data Converters: A/D 76 SAR, Sigma-Delta
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 292-LFBGA
• Supplier Device Package: PG-LFBGA-292-10

pacote: -

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S70GL02GS11FHB013

Infineon Technologies

IC FLASH 2GBIT CFI 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 2Gbit
• Memory Interface: CFI
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 110 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (13x11)

pacote: -

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S29GL128S10TFB023

Infineon Technologies

PNOR

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 128Mbit
• Memory Interface: CFI
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 100 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP

pacote: -

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SIGC07T60SNCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 6 A
• Current - Collector Pulsed (Icm): 18 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 24ns/248ns
• Test Condition: 400V, 6A, 50Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

pacote: -

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CY9BF104NAPMC-G-UNE1

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 80
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

pacote: -