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Infineon Technologies |
MOSFET N-CH 100V 15A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 93A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.6V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MN
- Package / Case: DirectFET? Isometric MN
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pacote: DirectFET? Isometric MN |
Estoque3.504 |
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Infineon Technologies |
MOSFET N-CH 20V 1.5A SOT-363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-6
- Package / Case: 6-VSSOP, SC-88, SOT-363
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pacote: 6-VSSOP, SC-88, SOT-363 |
Estoque6.176 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 440 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque4.192 |
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Infineon Technologies |
MOSFET N-CH 60V 75A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque396.264 |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque3.376 |
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Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1485pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 32A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque7.360 |
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Infineon Technologies |
MOSFET P-CH 100V 38A TO-262
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque7.328 |
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Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 25000pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
Estoque8.772 |
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Infineon Technologies |
MOSFET N-CH 25V 33A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 12V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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pacote: 8-PowerTDFN |
Estoque216.402 |
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Infineon Technologies |
GAN SIC
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque2.352 |
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Infineon Technologies |
IC REG LINEAR 7.5A 8SOIC
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 7.5A
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: 0°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque3.504 |
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Infineon Technologies |
IC OFFLINE CTRLR SMPS CM 7DIP
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 15V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 100kHz
- Power (Watts): 57W
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
- Supplier Device Package: PG-DIP-7-1
- Mounting Type: Through Hole
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pacote: 8-DIP (0.300", 7.62mm), 7 Leads |
Estoque5.664 |
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Infineon Technologies |
IC MCU 32BIT 1.5MB FLASH 144LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 144MHz
- Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
- Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
- Number of I/O: 119
- Program Memory Size: 1.5MB (1.5M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 276K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 32x12b, D/A 2x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-144-24
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pacote: 144-LQFP Exposed Pad |
Estoque2.784 |
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Infineon Technologies |
IC MCU 16BIT 320KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 38
- Program Memory Size: 320KB (320K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 42K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 9x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-64-6
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pacote: 64-LQFP Exposed Pad |
Estoque7.696 |
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Infineon Technologies |
TXRX ETHRNET MULT-MODE 1.25GBIT
- Data Rate: 2.125Gbps
- Wavelength: 850nm
- Applications: Ethernet
- Voltage - Supply: 3.1 V ~ 3.5 V
- Connector Type: LC Duplex
- Mounting Type: Through Hole
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pacote: - |
Estoque5.904 |
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Infineon Technologies |
TVS DIODE 5.3VWM 11VC TSLP2
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 5.3V (Max)
- Voltage - Breakdown (Min): 5.7V
- Voltage - Clamping (Max) @ Ipp: 11V
- Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
- Power - Peak Pulse: 66W
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 35pF @ 1MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOD-882
- Supplier Device Package: PG-TSLP-2
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pacote: SOD-882 |
Estoque720.000 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 100TQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque5.040 |
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Infineon Technologies |
IC REG 4OUT VQFN-48-31
- Applications: -
- Voltage - Input: -
- Number of Outputs: 4
- Voltage - Output: 3.3V, 5V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-31
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pacote: 48-VFQFN Exposed Pad |
Estoque7.696 |
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Infineon Technologies |
MOSFET 800V TDSON-8
- FET Type: -
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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pacote: - |
Request a Quote |
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Infineon Technologies |
DIODE GEN PURP 3.6KV 850A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3600 V
- Current - Average Rectified (Io): 850A
- Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 160°C
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pacote: - |
Request a Quote |
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Infineon Technologies |
IC LED DRVR CTRLR NO 100MA 8DSO
- Type: DC DC Controller
- Topology: Flyback
- Internal Switch(s): Yes
- Number of Outputs: 1
- Voltage - Supply (Min): 6V
- Voltage - Supply (Max): 24V
- Voltage - Output: -
- Current - Output / Channel: 100mA
- Frequency: 15MHz
- Dimming: No
- Applications: LED Lighting
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-41
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pacote: - |
Estoque31.275 |
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Infineon Technologies |
IGBT MOD 1200V 900A 5100W
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 5100 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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pacote: - |
Request a Quote |
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Infineon Technologies |
IC SRAM MICROPOWER
- Memory Type: -
- Memory Format: -
- Technology: -
- Memory Size: -
- Memory Interface: -
- Clock Frequency: -
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Request a Quote |
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Infineon Technologies |
DIODE MODULE GP 1800V 171A
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io) (per Diode): 171A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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pacote: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE 1700V 6250W
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): -
- Power - Max: 6250 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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pacote: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8PQFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 7.1mOhm @ 16A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3x3)
- Package / Case: 8-PowerVDFN
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pacote: - |
Request a Quote |
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Infineon Technologies |
MOSFET N-CH 100V 260A HDSOP-16-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 260A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 210µA
- Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 11830 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-16-2
- Package / Case: 16-PowerSOP Module
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pacote: - |
Estoque11.391 |
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Infineon Technologies |
IC MCU 32BIT 128KB FLASH 40QFN
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
- Number of I/O: 34
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 20x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 40-UFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
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pacote: - |
Request a Quote |
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