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Infineon Technologies |
IGBT 600V 85A 350W SUPER247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 85A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 350W
- Switching Energy: 3.95mJ (on), 2.33mJ (off)
- Input Type: Standard
- Gate Charge: 340nC
- Td (on/off) @ 25°C: 82ns/282ns
- Test Condition: 480V, 60A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 82ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-274AA
- Supplier Device Package: SUPER-247 (TO-274AA)
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pacote: TO-274AA |
Estoque11.100 |
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Infineon Technologies |
IGBT 650V 10.8A 31.2W PG-TO220-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 10.8A
- Current - Collector Pulsed (Icm): 24A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 31.2W
- Switching Energy: 70µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 22nC
- Td (on/off) @ 25°C: 11ns/115ns
- Test Condition: 400V, 4A, 48 Ohm, 15V
- Reverse Recovery Time (trr): 40ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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pacote: TO-220-3 |
Estoque7.968 |
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Infineon Technologies |
IGBT 600V 13A 60W TO220AB
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 13A
- Current - Collector Pulsed (Icm): 52A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
- Power - Max: 60W
- Switching Energy: 160µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 27nC
- Td (on/off) @ 25°C: 39ns/93ns
- Test Condition: 480V, 6.5A, 50 Ohm, 15V
- Reverse Recovery Time (trr): 37ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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pacote: TO-220-3 |
Estoque36.000 |
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Infineon Technologies |
MOSFET N-CH 55V 35A TO220-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 170W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: P-TO220-5
- Package / Case: TO-220-5
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pacote: TO-220-5 |
Estoque7.056 |
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Infineon Technologies |
MOSFET P-CH 60V 1.17A SOT-223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
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pacote: TO-261-4, TO-261AA |
Estoque2.288 |
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Infineon Technologies |
MOSFET N-CH 30V 105A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque2.304 |
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Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 7980pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque6.896 |
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Infineon Technologies |
MOSFET N-CH 55V 30A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque60.012 |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 340µA
- Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque519.888 |
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Infineon Technologies |
MOSFET N-CH 25V 19A DIRECTFET-SQ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? SQ
- Package / Case: DirectFET? Isometric SQ
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pacote: DirectFET? Isometric SQ |
Estoque4.752 |
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Infineon Technologies |
MOSFET N-CHANNEL_100+
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacote: - |
Estoque4.576 |
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Infineon Technologies |
MOSFET N-CH 200V 9.5A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque390.000 |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.7A 6-TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.7A
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Power - Max: 960mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque187.080 |
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Infineon Technologies |
MOSFET N/P-CH 25V 8-SOIC
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque77.076 |
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Infineon Technologies |
TRANS NPN 45V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque3.008 |
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Infineon Technologies |
TRANS NPN 30V 0.1A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque2.912 |
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Infineon Technologies |
IC PWR HYBRID 600V 20A SIP2
- Type: IGBT
- Configuration: 3 Phase
- Current: 20A
- Voltage: 600V
- Voltage - Isolation: 2000Vrms
- Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
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pacote: 23-PowerSIP Module, 19 Leads, Formed Leads |
Estoque9.852 |
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Infineon Technologies |
DIODE VAR CAP 30V 20MA SOD-323
- Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
- Capacitance Ratio: 25
- Capacitance Ratio Condition: C1/C28
- Voltage - Peak Reverse (Max): 30V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
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pacote: SC-76, SOD-323 |
Estoque279.714 |
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Infineon Technologies |
DIODE RF PIN 150V 100MA SOT323
- Diode Type: PIN - 1 Pair Common Cathode
- Voltage - Peak Reverse (Max): 150V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
- Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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pacote: SC-70, SOT-323 |
Estoque6.784 |
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Infineon Technologies |
IC REG LINEAR 100MA TSON-10
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 100mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque2.528 |
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Infineon Technologies |
IC REG LINEAR 3.3V 150MA SCT595
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 18V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.57V @ 150mA
- Current - Output: 150mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 75µA ~ 200µA
- PSRR: 63dB (10kHz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD (5 Leads), Gull Wing
- Supplier Device Package: PG-SCT-595
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pacote: 6-SMD (5 Leads), Gull Wing |
Estoque7.472 |
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Infineon Technologies |
IC REG BUCK ADJ 4A SYNC 15QFN
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 2.5V
- Voltage - Input (Max): 21V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 12V
- Current - Output: 4A
- Frequency - Switching: 600kHz
- Synchronous Rectifier: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 15-PowerVQFN
- Supplier Device Package: PQFN (5x6)
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pacote: 15-PowerVQFN |
Estoque27.708 |
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Infineon Technologies |
IC SW IPS 1CH HIGH SIDE D2PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 36V (Max)
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 3.1A
- Rds On (Typ): 46 mOhm
- Input Type: Non-Inverting
- Features: Auto Restart
- Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: D2PAK
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pacote: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Estoque7.376 |
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Infineon Technologies |
IC PFC CONTROLLER CCM 8DSO
- Mode: Continuous Conduction (CCM)
- Frequency - Switching: 50kHz ~ 315kHz
- Current - Startup: 450µA
- Voltage - Supply: 11 V ~ 25 V
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque5.568 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16MLPQ
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VFQFN Exposed Pad, 14 Leads
- Supplier Device Package: 16-MLPQ (4x4)
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pacote: 16-VFQFN Exposed Pad, 14 Leads |
Estoque3.344 |
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Infineon Technologies |
IC DRIVER 3PHASE 600V 44PLCC
- Driven Configuration: Half-Bridge
- Channel Type: 3-Phase
- Number of Drivers: 6
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 12 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 125ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 44-LCC (J-Lead), 32 Leads
- Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
|
pacote: 44-LCC (J-Lead), 32 Leads |
Estoque14.820 |
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Infineon Technologies |
IC DVR CURRENT SENSE 1CH 8SOIC
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 9 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 40ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque5.296 |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE HV 8-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 70ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque15.924 |
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Infineon Technologies |
IC OFFLINE CTRLR SMPS OTP 8DIP
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 15V
- Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
- Duty Cycle: 72%
- Frequency - Switching: 67kHz
- Power (Watts): 57W
- Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -25°C ~ 130°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
- Mounting Type: Through Hole
|
pacote: 8-DIP (0.300", 7.62mm) |
Estoque5.744 |
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Infineon Technologies |
IC MCU 32BIT 80MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
pacote: - |
Estoque7.344 |
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