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Infineon Technologies |
IGBT HS SW 1200V 40A TO-247-3
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
- Power - Max: 500W
- Switching Energy: 3.3mJ (on), 1.3mJ (off)
- Input Type: Standard
- Gate Charge: 190nC
- Td (on/off) @ 25°C: 30ns/300ns
- Test Condition: 400V, 40A, 12 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-46
|
pacote: TO-247-3 |
Estoque6.864 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
pacote: TO-220-3 |
Estoque6.672 |
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Infineon Technologies |
MOSFET N-CH 30V 5.8A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque7.792 |
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Infineon Technologies |
MOSFET N-CH 20V 100A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque7.520 |
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Infineon Technologies |
MOSFET N-CH 100V 24A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 56W (Tc)
- Rds On (Max) @ Id, Vgs: 36 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB Full-Pak
- Package / Case: TO-220-3 Full Pack
|
pacote: TO-220-3 Full Pack |
Estoque11.040 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.464 |
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Infineon Technologies |
MOSFET P-CH TO263-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.760 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
pacote: TO-220-3 |
Estoque4.928 |
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Infineon Technologies |
MOSFET N-CH 200V 21A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
|
pacote: TO-220-3 |
Estoque37.572 |
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Infineon Technologies |
MOSFET N-CH 60V 43A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque19.788 |
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Infineon Technologies |
MOSFET N-CH 100V 33A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque35.376 |
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Infineon Technologies |
IC FET RF LDMOS 130W H-30260-2
- Transistor Type: LDMOS
- Frequency: 2.42GHz
- Gain: 14dB
- Voltage - Test: 28V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.15A
- Power - Output: 130W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads, Flanged
- Supplier Device Package: H-31260-2
|
pacote: 2-Flatpack, Fin Leads, Flanged |
Estoque3.488 |
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Infineon Technologies |
FET RF 2CH 65V 960MHZ H-37275G-6
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 960MHz
- Gain: 20dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 2.8A
- Power - Output: 315W
- Voltage - Rated: 65V
- Package / Case: H-34275G-6/2
- Supplier Device Package: H-34275G-6/2
|
pacote: H-34275G-6/2 |
Estoque6.432 |
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Infineon Technologies |
MOSFET 2N-CH 20V 1.5A 6TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque2.480 |
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Infineon Technologies |
TRANS PNP 30V 0.1A SOT323
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
|
pacote: SC-70, SOT-323 |
Estoque7.792 |
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Infineon Technologies |
TRANS PREBIAS NPN 0.25W SOT23-3
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 22k
- Resistor - Emitter Base (R2) (Ohms): 22k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque24.990 |
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Infineon Technologies |
TRANSISTOR RF NPN 15V SOT-89
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 5.5GHz
- Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
- Gain: 7dB ~ 11.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
- Current - Collector (Ic) (Max): 210mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
|
pacote: TO-243AA |
Estoque7.984 |
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Infineon Technologies |
IC REG LIN POS ADJ 300MA 14SSOP
- Output Configuration: Positive
- Output Type: Adjustable
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): 12V
- Voltage Dropout (Max): 0.5V @ 200mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 200µA ~ 11mA
- PSRR: 65dB (100Hz)
- Control Features: Enable
- Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-SSOP-14-EP
|
pacote: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad |
Estoque7.632 |
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Infineon Technologies |
IC REG BUCK ADJ 1.8A 8DSO
- Function: Step-Down
- Output Configuration: Positive
- Topology: Buck
- Output Type: Adjustable
- Number of Outputs: 1
- Voltage - Input (Min): 4.75V
- Voltage - Input (Max): 45V
- Voltage - Output (Min/Fixed): 0.6V
- Voltage - Output (Max): 16V
- Current - Output: 1.8A
- Frequency - Switching: 370kHz
- Synchronous Rectifier: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque7.312 |
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Infineon Technologies |
IC HIGH SIDE PWR SWITCH D2PAK-5
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 4.75 V ~ 43 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 17A
- Rds On (Typ): 15 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Supplier Device Package: TO-263-5
|
pacote: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB |
Estoque62.184 |
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Infineon Technologies |
IC LED DRIVER LINEAR 14SSOP
- Type: Linear
- Topology: -
- Internal Switch(s): Yes
- Number of Outputs: 3
- Voltage - Supply (Min): 5.5V
- Voltage - Supply (Max): 40V
- Voltage - Output: 40V
- Current - Output / Channel: 120mA
- Frequency: -
- Dimming: -
- Applications: Automotive
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-SSOP-14
|
pacote: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad |
Estoque5.040 |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 24-SSOP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT
- Voltage - Supply: 11.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 24ns, 7ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 24-SSOP
|
pacote: 24-SSOP (0.209", 5.30mm Width) |
Estoque60.360 |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 14SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.9V
- Current - Peak Output (Source, Sink): 200mA, 350mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 150ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
|
pacote: 14-SOIC (0.154", 3.90mm Width) |
Estoque421.152 |
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Infineon Technologies |
IC DRIVER HALF BRIDGE OSC 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 15 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1A, 1A
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 100V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque473.304 |
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Infineon Technologies |
IC MOSFET DRIVER IQFN-40
- Output Configuration: Half Bridge
- Applications: Buck Converters
- Interface: PWM
- Load Type: Inductive
- Technology: DrMOS
- Rds On (Typ): -
- Current - Output / Channel: 35A
- Current - Peak Output: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Voltage - Load: 5 V ~ 30 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: Shoot-Through
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: PG-IQFN-40
|
pacote: 40-VFQFN Exposed Pad |
Estoque3.952 |
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Infineon Technologies |
TRANSCEIVER LIN SGL WIRE 8DSO
- Type: Transceiver
- Protocol: LIN
- Number of Drivers/Receivers: 1/1
- Duplex: -
- Receiver Hysteresis: -
- Data Rate: -
- Voltage - Supply: 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-3
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque4.400 |
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Infineon Technologies |
IC MCU 32BIT 1MB FLASH 100LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 144MHz
- Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
- Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
- Number of I/O: 75
- Program Memory Size: 1MB (1M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 200K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 24x12b, D/A 2x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-25
|
pacote: 100-LQFP Exposed Pad |
Estoque2.224 |
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Infineon Technologies |
IC AMP MMIC 80MA 3V SOT343
- Frequency: 0Hz ~ 2.4GHz
- P1dB: 12dBm (15.8mW)
- Gain: 17.5dB
- Noise Figure: 2.1dB
- RF Type: Cellular, GSM, PCS, CDMA, UMTS
- Voltage - Supply: 3V
- Current - Supply: 80mA
- Test Frequency: 2GHz
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
|
pacote: SC-82A, SOT-343 |
Estoque4.662 |
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Infineon Technologies |
IC REGULATOR PG-VQFN-40-902
- Applications: Controller, DDR, Intel VR12, AMD SVI
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -20°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: 40-QFN (6x6)
|
pacote: 40-VFQFN Exposed Pad |
Estoque6.000 |
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Infineon Technologies |
BODY BRIDGES
- Output Configuration: Half Bridge (3)
- Applications: DC Motors, General Purpose
- Interface: SPI
- Load Type: Inductive
- Technology: Power MOSFET
- Rds On (Typ): 825 mOhm LS, 825 mOhm HS
- Current - Output / Channel: 2A
- Current - Peak Output: -
- Voltage - Supply: 3 V ~ 5.5 V
- Voltage - Load: 5.5 V ~ 20 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Features: -
- Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
- Mounting Type: Surface Mount
- Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: PG-TSDSO-14
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pacote: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad |
Estoque29.172 |
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