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Infineon Technologies |
IGBT 600V 47A 206W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 47A
- Current - Collector Pulsed (Icm): 54A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
- Power - Max: 206W
- Switching Energy: 95µJ (on), 350µJ (off)
- Input Type: Standard
- Gate Charge: 35nC
- Td (on/off) @ 25°C: 40ns/105ns
- Test Condition: 400V, 18A, 22 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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pacote: TO-247-3 |
Estoque6.912 |
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Infineon Technologies |
IGBT W/DIODE 600V 40A TO-247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 160W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
|
pacote: TO-247-3 |
Estoque3.504 |
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Infineon Technologies |
IGBT 600V 80A 306W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 160A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 306W
- Switching Energy: 1.68mJ
- Input Type: Standard
- Gate Charge: 223nC
- Td (on/off) @ 25°C: 19ns/197ns
- Test Condition: 400V, 40A, 7.9 Ohm, 15V
- Reverse Recovery Time (trr): 124ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
|
pacote: TO-247-3 |
Estoque6.036 |
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Infineon Technologies |
MOSFET N-CH 100V DPAK
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
pacote: - |
Estoque4.672 |
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Infineon Technologies |
MOSFET N-CH 80V 38A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 29 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque291.600 |
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Infineon Technologies |
MOSFET N-CH 30V 25A DIRECTFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 25A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? MX
- Package / Case: DirectFET? Isometric MX
|
pacote: DirectFET? Isometric MX |
Estoque20.316 |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque7.152 |
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Infineon Technologies |
MOSFET N CH 75V 87A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4430pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 52A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque6.928 |
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Infineon Technologies |
MOSFET N CH 25V 28A S3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 125A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2510pF @ 13V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 28A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET? S3C
- Package / Case: DirectFET? Isometric S3C
|
pacote: DirectFET? Isometric S3C |
Estoque57.600 |
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Infineon Technologies |
MOSFET N-CH 150V 83A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 350W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque21.456 |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.560 |
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Infineon Technologies |
MOSFET N-CH 60V 7A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque109.380 |
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Infineon Technologies |
MOSFET P-CH 20V 6.9A 6TSOP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6
|
pacote: SOT-23-6 |
Estoque454.224 |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO247-4
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1.25mA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247
- Package / Case: TO-247-4
|
pacote: TO-247-4 |
Estoque18.516 |
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Infineon Technologies |
TRANS PREBIAS PNP 250MW TSFP-3
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1) (Ohms): 4.7k
- Resistor - Emitter Base (R2) (Ohms): 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 160MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
|
pacote: SOT-723 |
Estoque7.584 |
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Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT23
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 150nA @ 70V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque209.388 |
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Infineon Technologies |
IC REG CTRLR BOOST 14-SSOP
- Output Type: Transistor Driver
- Function: Step-Up
- Output Configuration: Positive
- Topology: Boost
- Number of Outputs: 1
- Output Phases: 1
- Voltage - Supply (Vcc/Vdd): 4.75 V ~ 45 V
- Frequency - Switching: 100kHz ~ 700kHz
- Duty Cycle (Max): 93%
- Synchronous Rectifier: No
- Clock Sync: Yes
- Serial Interfaces: -
- Control Features: Enable, Frequency Control, Soft Start
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 14-SSOP
|
pacote: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad |
Estoque3.456 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14-SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.7V
- Current - Peak Output (Source, Sink): 1.9A, 2.3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 40ns, 20ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 14-SOIC
|
pacote: 14-SOIC (0.154", 3.90mm Width) |
Estoque2.224 |
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Infineon Technologies |
IC DRIVER LOW SIDE 1.5A SOT23-5
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10.2 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 1.5A, 1.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 25ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SOT-23-5
|
pacote: SC-74A, SOT-753 |
Estoque34.776 |
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Infineon Technologies |
IC PFC CONTROLLER CCM 8DSO
- Output Isolation: Isolated
- Internal Switch(s): No
- Voltage - Breakdown: -
- Topology: Flyback
- Voltage - Start Up: 18V
- Voltage - Supply (Vcc/Vdd): 10.5 V ~ 25 V
- Duty Cycle: 75%
- Frequency - Switching: 130kHz
- Power (Watts): -
- Fault Protection: Over Load, Over Temperature, Over Voltage
- Control Features: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
- Mounting Type: Surface Mount
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque5.360 |
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Infineon Technologies |
IC CTRLR SMPS QUASI-RESON 7DIP
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 800V
- Topology: Flyback
- Voltage - Start Up: 18V
- Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
- Duty Cycle: 50%
- Frequency - Switching: 52kHz
- Power (Watts): 54W
- Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
- Control Features: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
- Supplier Device Package: PG-DIP-7
- Mounting Type: Through Hole
|
pacote: 8-DIP (0.300", 7.62mm), 7 Leads |
Estoque7.824 |
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Infineon Technologies |
IC CTRLR WLAN HS NIC 128-FQFP
- Applications: Wireless Power Transmitter
- Interface: Serial
- Voltage - Supply: 3.3V
- Package / Case: 128-BFQFP
- Supplier Device Package: P-FQFP-128
- Mounting Type: Surface Mount
|
pacote: 128-BFQFP |
Estoque14.832 |
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Infineon Technologies |
IC MCU 32BIT 8KB FLASH 38TSSOP
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 26
- Program Memory Size: 8KB (8K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 38-TFSOP (0.173", 4.40mm Width)
- Supplier Device Package: 38-TSSOP
|
pacote: 38-TFSOP (0.173", 4.40mm Width) |
Estoque2.160 |
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Infineon Technologies |
IC MCU 8BIT 32KB FLASH 48TQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: CAN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 34
- Program Memory Size: 32KB (32K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 48-TQFP
- Supplier Device Package: 48-TQFP (7x7)
|
pacote: 48-TQFP |
Estoque7.392 |
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Infineon Technologies |
IC MCU 32BIT 3MB FLASH 292LFBGA
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 200MHz
- Connectivity: ASC, CAN, FlexRay, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 128
- Program Memory Size: 3MB (3M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 192K x 8
- RAM Size: 288K x 8
- Voltage - Supply (Vcc/Vdd): 1.17 V ~ 3.63 V
- Data Converters: A/D 8x10b, 44x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: PG-LFBGA-292
|
pacote: - |
Estoque6.272 |
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Infineon Technologies |
IC MCU 32BIT 200KB FLASH 38TSSOP
- Core Processor: ARM? Cortex?-M0
- Core Size: 32-Bit
- Speed: 32MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
- Number of I/O: 26
- Program Memory Size: 200KB (200K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
- Data Converters: A/D 16x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: -
- Package / Case: 38-TFSOP (0.173", 4.40mm Width)
- Supplier Device Package: PG-TSSOP-38-9
|
pacote: 38-TFSOP (0.173", 4.40mm Width) |
Estoque6.448 |
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Infineon Technologies |
IC MOTOR DRIVER 48VQFN
- Applications: Automotive
- Core Processor: ARM? Cortex?-M3
- Program Memory Type: FLASH (64 kB)
- Controller Series: -
- RAM Size: 6K x 8
- Interface: LIN, SSI, UART
- Number of I/O: 10
- Voltage - Supply: 5.5 V ~ 28 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: VQFN-48-31
|
pacote: 48-VFQFN Exposed Pad |
Estoque2.560 |
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Infineon Technologies |
PARALLEL OPTICAL LINK 1.6GBIT
- Wavelength: -
- Data Rate: 1.6Gbps
- Voltage - Supply: 3.3V
- Current - Supply: -
- Applications: Telecommunications
|
pacote: - |
Estoque6.696 |
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Infineon Technologies |
IC REG BUCK 56VQFN
- Output Type: -
- Function: -
- Output Configuration: -
- Topology: -
- Number of Outputs: -
- Output Phases: -
- Voltage - Supply (Vcc/Vdd): -
- Frequency - Switching: -
- Duty Cycle (Max): -
- Synchronous Rectifier: -
- Clock Sync: -
- Serial Interfaces: -
- Control Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
|
pacote: - |
Estoque2.528 |
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Infineon Technologies |
IC MCU 16BIT 80MQFP
- Core Processor: -
- Core Size: -
- Speed: -
- Connectivity: -
- Peripherals: -
- Number of I/O: -
- Program Memory Size: -
- Program Memory Type: -
- EEPROM Size: -
- RAM Size: -
- Voltage - Supply (Vcc/Vdd): -
- Data Converters: -
- Oscillator Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: 80-MQFP
|
pacote: - |
Estoque3.520 |
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