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Infineon Technologies |
IGBT 600V 76A 268W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 76A
- Current - Collector Pulsed (Icm): 105A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 35A
- Power - Max: 268W
- Switching Energy: 390µJ (on), 632µJ (off)
- Input Type: Standard
- Gate Charge: 104nC
- Td (on/off) @ 25°C: 46ns/105ns
- Test Condition: 400V, 35A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 120ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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pacote: TO-247-3 |
Estoque4.592 |
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Infineon Technologies |
MOSFET N-CH 150V DIE ON WAFER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacote: - |
Estoque4.000 |
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Infineon Technologies |
MOSFET N-CH 60V 11.5A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Rds On (Max) @ Id, Vgs: 170 mOhm @ 5.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-220AB
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque4.240 |
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Infineon Technologies |
MOSFET N-CH BARE DIE
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacote: - |
Estoque2.336 |
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Infineon Technologies |
MOSFET N CH 250V 9.3A IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 345 mOhm @ 5.6A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque5.152 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.552 |
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Infineon Technologies |
CONSUMER
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacote: - |
Estoque3.200 |
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Infineon Technologies |
MOSFET N-CH 30V 1.4A SOT363
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT363-6
- Package / Case: 6-VSSOP, SC-88, SOT-363
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pacote: 6-VSSOP, SC-88, SOT-363 |
Estoque4.560 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-323
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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pacote: - |
Estoque3.296 |
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Infineon Technologies |
MOSFET P-CH 30V 70A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque5.600 |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque169.590 |
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Infineon Technologies |
MOSFET P-CH 55V 31A TO-220AB
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Rds On (Max) @ Id, Vgs: 60 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque19.884 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Rds On (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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pacote: TO-220-3 |
Estoque920.844 |
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Infineon Technologies |
RF MOSFET TRANSISTORS
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque5.056 |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.3A 6TSOP
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.3A
- Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V
- Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-TSOP6-6
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pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque7.568 |
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Infineon Technologies |
TRANS NPN DARL 60V 0.5A SOT223
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 1.5W
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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pacote: TO-261-4, TO-261AA |
Estoque4.352 |
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Infineon Technologies |
DIODE PIN ANTI 80V 100MA TSLP4-4
- Diode Type: PIN - 2 Independent
- Voltage - Peak Reverse (Max): 80V
- Current - Max: 100mA
- Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
- Resistance @ If, F: 800 mOhm @ 10mA, 100MHz
- Power Dissipation (Max): 250mW
- Operating Temperature: 150°C (TJ)
- Package / Case: 4-XFDFN
- Supplier Device Package: PG-TSLP-4
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pacote: 4-XFDFN |
Estoque3.696 |
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Infineon Technologies |
DIODE GEN PURP 200V 250MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 200V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
- Operating Temperature - Junction: 150°C (Max)
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pacote: SC-76, SOD-323 |
Estoque5.808 |
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Infineon Technologies |
DIODE GEN PURP 650V 8A TO220-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -40°C ~ 175°C
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pacote: TO-220-2 |
Estoque7.500 |
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Infineon Technologies |
IC REG LINEAR 5V 300MA TO263-5
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 42V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.5V @ 200mA
- Current - Output: 300mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 30µA ~ 40µA
- PSRR: 60dB (100Hz)
- Control Features: Delay, Reset
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
- Supplier Device Package: PG-TO263-5
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pacote: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA |
Estoque3.120 |
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Infineon Technologies |
IC CTRLR PWM MULTIPHASE 48QFN
- Applications: Multiphase Controller
- Current - Supply: -
- Voltage - Supply: 3.3V
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: -
- Supplier Device Package: 48-QFN (6x6)
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pacote: - |
Estoque4.240 |
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Infineon Technologies |
IC HALF BRIDGE DRIVER 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 210mA, 360mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 100ns, 50ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque4.640 |
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Infineon Technologies |
IC IGBT DVR 1200V DSO8
- Driven Configuration: High-Side or Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT
- Voltage - Supply: 13 V ~ 18 V
- Logic Voltage - VIL, VIH: 1.5V, 3.5V
- Current - Peak Output (Source, Sink): 2.2A, 2.3A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 9ns, 6ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-51
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pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque3.664 |
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Infineon Technologies |
IC MCU 32BIT FLASH 516LFBGA
- Core Processor: TriCore?
- Core Size: 32-Bit
- Speed: 300MHz
- Connectivity: ASC, CAN, EBI/EMI, FlexRay, MLI, MSC, SSC
- Peripherals: DMA, POR, WDT
- Number of I/O: 238
- Program Memory Size: 4MB (4M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 192K x 8
- RAM Size: 288K x 8
- Voltage - Supply (Vcc/Vdd): 1.235 V ~ 3.63 V
- Data Converters: A/D 8x10b, 64x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque7.648 |
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Infineon Technologies |
IC MCU 16BIT 256KB FLASH 100TQFP
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 40MHz
- Connectivity: CAN, EBI/EMI, SPI, UART/USART
- Peripherals: PWM, WDT
- Number of I/O: 79
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 12K x 8
- Voltage - Supply (Vcc/Vdd): 2.35 V ~ 2.7 V
- Data Converters: A/D 14x8/10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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pacote: - |
Estoque6.176 |
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Infineon Technologies |
IC MCU 16BIT 160KB FLASH 48VFQFN
- Core Processor: C166SV2
- Core Size: 16-Bit
- Speed: 66MHz
- Connectivity: I2C, LIN, SPI, UART/USART
- Peripherals: DMA, I2S, POR, PWM, WDT
- Number of I/O: 33
- Program Memory Size: 160KB (160K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 12K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 10x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: PG-VQFN-48-54
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pacote: 48-VFQFN Exposed Pad |
Estoque3.184 |
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Infineon Technologies |
IC MCU 32BIT 2MB FLASH 144LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 144MHz
- Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
- Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
- Number of I/O: 119
- Program Memory Size: 2MB (2M x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 352K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 32x12b, D/A 2x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 144-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-144-24
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pacote: 144-LQFP Exposed Pad |
Estoque9.060 |
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Infineon Technologies |
TVS DIODE 3.3VWM 6.8VC TSSLP2-1
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 3.3V (Max)
- Voltage - Breakdown (Min): -
- Voltage - Clamping (Max) @ Ipp: 6.8V (Typ)
- Current - Peak Pulse (10/1000µs): 8A (8/20µs)
- Power - Peak Pulse: -
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: 14pF @ 1MHz
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 2-XFDFN
- Supplier Device Package: TSSLP-2-1
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pacote: 2-XFDFN |
Estoque5.616 |
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Infineon Technologies |
MAGNETIC SWITCH SPEC PURP SSO-3
- Function: Special Purpose
- Technology: Hall Effect
- Polarization: -
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: 3-SIP, SSO-3-09
- Supplier Device Package: SSO-3
|
pacote: 3-SIP, SSO-3-09 |
Estoque8.766 |
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Infineon Technologies |
MAGNETIC SWITCH LATCH EFF SS0-3
- Function: Latch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: -
- Test Condition: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Output Type: -
- Features: -
- Operating Temperature: -
- Package / Case: -
- Supplier Device Package: -
|
pacote: - |
Estoque2.844 |
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