Infineon Technologies Produtos

IRG7CH75K10EF-R

Infineon Technologies

IGBT 1200V ULTRA FAST DIE

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.53V @ 15V, 20A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 500nC
• Td (on/off) @ 25°C: 120ns/445ns
• Test Condition: 600V, 100A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

pacote: Die

AUIRFS3206

Infineon Technologies

MOSFET N-CH 60V 210A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6540pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRL7732S2TR

Infineon Technologies

MOSFET N-CH 40V 14A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
• Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? SC
• Package / Case: DirectFET? Isometric SC

pacote: DirectFET? Isometric SC

BSO211PHXUMA1

Infineon Technologies

MOSFET 2P-CH 20V 4A 8DSO

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A
• Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.6A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1095pF @ 15V
• Power - Max: 1.6W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

pacote: 8-SOIC (0.154", 3.90mm Width)

BCR 166F E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSFP-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 160MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

pacote: SOT-723

IRU1050CMTR

Infineon Technologies

IC REG LINEAR POS ADJ 5A TO263

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 3.3V
• Voltage Dropout (Max): 1.3V @ 5A
• Current - Output: 5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
• Supplier Device Package: TO-263

pacote: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

IRU1030CD

Infineon Technologies

IC REG LINEAR POS ADJ 3A DPAK

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 3.3V
• Voltage Dropout (Max): 1.3V @ 3A
• Current - Output: 3A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

IP1206TRPBF

Infineon Technologies

IC REG BUCK ADJ SNGL/DL SYNC LGA

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1 or 2
• Voltage - Input (Min): 7.5V
• Voltage - Input (Max): 14.5V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5.5V
• Current - Output: 30A, 15A
• Frequency - Switching: 200kHz ~ 600kHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-LGA
• Supplier Device Package: 36-LGA (9.25x15.5)

pacote: 36-LGA

IR3840WMTRPBF

Infineon Technologies

IC REG BUCK ADJ 12A SYNC 15QFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1.5V
• Voltage - Input (Max): 16V
• Voltage - Output (Min/Fixed): 0.7V
• Voltage - Output (Max): 14.4V
• Current - Output: 12A
• Frequency - Switching: 225kHz ~ 1.65MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 22-PowerVFQFN
• Supplier Device Package: 22-PQFN (5x6)

pacote: 22-PowerVFQFN

IR2106STR

Infineon Technologies

IC DRIVER HIGH/LOW 600V 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

pacote: 8-SOIC (0.154", 3.90mm Width)

XE161FL12F80VAAFXUMA1

Infineon Technologies

IC MCU 16BIT 96KB FLASH 48VQFN

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: DMA, I2S, POR, PWM, WDT
• Number of I/O: 33
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 12K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-54

pacote: 48-VFQFN Exposed Pad

V23826-K305-C353C3

Infineon Technologies

TXRX MULT-MODE 850NM 1.3GBIT

• Data Rate: 1.3Gbps
• Wavelength: 850nm
• Applications: Ethernet
• Voltage - Supply: 3.1 V ~ 3.5 V
• Connector Type: SC
• Mounting Type: Through Hole

pacote: -

TLE4927CE6947HAMA1

Infineon Technologies

MAGNETIC SWITCH SPEC PURP SSO-3

• Function: Special Purpose
• Technology: Hall Effect
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: 3.2 V ~ 26 V
• Current - Supply (Max): 6.8mA (Typ)
• Current - Output (Max): 20mA
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 175°C (TA)
• Package / Case: 3-SIP, SSO-3-09
• Supplier Device Package: SSO-3

pacote: 3-SIP, SSO-3-09

CHL8328-23CRT

Infineon Technologies

IC REGULATOR PG-VQFN-56-901

• Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-VFQFN Exposed Pad
• Supplier Device Package: 56-VQFN (8x8)

pacote: 56-VFQFN Exposed Pad

IPSA70R2K0P7SAKMA1

Infineon Technologies

MOSFET N-CH 700V 3A TO251-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 400 V
• Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 400 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 17.6W (Tc)
• Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3-347
• Package / Case: TO-251-3 Stub Leads, IPAK

pacote: -

IAUC100N04S6L025ATMA1

Infineon Technologies

IAUC100N04S6L025ATMA1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 24µA
• Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2019 pF @ 25 V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 62W (Tc)
• Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

pacote: -

IM240S6Y1BAKMA1

Infineon Technologies

CIPOS MICRO

• Type: IGBT
• Configuration: -
• Current: 3 A
• Voltage: 600 V
• Voltage - Isolation: 1900Vrms
• Package / Case: 23-DIP Module (0.573", 14.55mm)

pacote: -

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ISC037N03L5ISATMA1

Infineon Technologies

MOSFET N-CH 30V 20A/78A TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-6
• Package / Case: 8-PowerTDFN

pacote: -

IAUC50N08S5L096ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 50A
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 24µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1684 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-33
• Package / Case: 8-PowerTDFN

pacote: -

IPP073N13NM6AKSA1

Infineon Technologies

TRENCH >=100V

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

pacote: -

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FS75R12KT4PB11BPSA1

Infineon Technologies

IGBT MODULE LOW PWR ECONO2-6

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

IRG4CC50WC

Infineon Technologies

IGBT CHIP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 27 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 33 ns
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

pacote: -

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TZ800N12KOFHPSA3

Infineon Technologies

SCR MODULE 1.2KV 1500A MODULE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 1.2 kV
• Current - On State (It (AV)) (Max): 819 A
• Current - On State (It (RMS)) (Max): 1500 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 35000A @ 50Hz
• Current - Hold (Ih) (Max): 500 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

pacote: -

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CY8C4147LQS-S463

Infineon Technologies

IC MCU 32BIT 128KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

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CY8C4125PVS-S422T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 24
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 28-SSOP

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CYT2BL5BAAQ0AZEGS

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 100LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 78
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 57x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

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CY62157G30-45ZXA

Infineon Technologies

IC SRAM 8MBIT PARALLEL 48TSOP I

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 8Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

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TLE92633BQXXUMA2

Infineon Technologies

OPTIREG SYST BASIS CHIPS

• Applications: System Basis Chip
• Current - Supply: 3.5mA
• Voltage - Supply: 3V ~ 28V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-79

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SPD07N60S5BTMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 350µA
• Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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IPD390P06NMSAUMA1

Infineon Technologies

MOSFET P-CH 60V TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

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