Infineon Technologies Produtos

IRG4RC10SDPBF

Infineon Technologies

IGBT 600V 14A 38W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
• Power - Max: 38W
• Switching Energy: 310µJ (on), 3.28mJ (off)
• Input Type: Standard
• Gate Charge: 15nC
• Td (on/off) @ 25°C: 76ns/815ns
• Test Condition: 480V, 8A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

IRGP4263DPBF

Infineon Technologies

IGBT 650V 90A 325W TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 192A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
• Power - Max: 325W
• Switching Energy: 2.9mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 145nC
• Td (on/off) @ 25°C: 70ns/140ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

pacote: TO-247-3

AUIRFS3004-7P

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 380W (Tc)
• Rds On (Max) @ Id, Vgs: 1.25 mOhm @ 195A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

pacote: TO-263-7, D2Pak (6 Leads + Tab)

IPB26CNE8N G

Infineon Technologies

MOSFET N-CH 85V 35A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 39µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFB42N20D

Infineon Technologies

MOSFET N-CH 200V 44A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 330W (Tc)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

pacote: TO-220-3

BSS119NH6433XTMA1

Infineon Technologies

MOSFET N-CH 100V 0.19A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 13µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20.9pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 190mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

pacote: TO-236-3, SC-59, SOT-23-3

BSC009NE2LS5IATMA1

Infineon Technologies

MOSFET N-CH 25V 40A 8TDSON IND

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 12V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
• Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

pacote: 8-PowerTDFN

PXFC212551SCV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

pacote: -

BC 857BT E6327

Infineon Technologies

TRANS PNP 45V 0.1A SC-75

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

pacote: SC-75, SOT-416

BCW68GE6327HTSA1

Infineon Technologies

TRANS PNP 45V 0.8A SOT-23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

pacote: TO-236-3, SC-59, SOT-23-3

BCR08PNH6327XTSA1

Infineon Technologies

TRANS NPN/PNP PREBIAS SOT363

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 170MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

pacote: 6-VSSOP, SC-88, SOT-363

BB565H7903XTMA1

Infineon Technologies

DIODE VAR CAP 30V 20MA SCD80

• Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
• Capacitance Ratio: 11
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

pacote: SC-80

TLE4274GV50ATMA2

Infineon Technologies

IC REG LINEAR 5V 400MA TO263-3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 250mA
• Current - Output: 400mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 220µA ~ 30mA
• PSRR: 60dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
• Supplier Device Package: PG-TO263-3-1

pacote: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

BSP77E6433HUMA1

Infineon Technologies

IC SWITCH POWER LOSIDE SOT223-4

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 42V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.17A
• Rds On (Typ): 70 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

pacote: TO-261-4, TO-261AA

IRSM515-055PA

Infineon Technologies

IC MOTOR DRIVER 500V 23SOP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: UMOS
• Rds On (Typ): 1.3 Ohm
• Current - Output / Channel: 2.4A
• Current - Peak Output: 15A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: 32-PowerSMD Module, 23 Leads
• Supplier Device Package: 23-SOP

pacote: 32-PowerSMD Module, 23 Leads

SAK-TC1775-L40E BA

Infineon Technologies

IC MCU 32BIT 8KB ROM 329BGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CAN, EBI/EMI, SDLM, SSC, UART/USART
• Peripherals: POR, WDT
• Number of I/O: 176
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: ROM
• EEPROM Size: -
• RAM Size: 73K x 8
• Voltage - Supply (Vcc/Vdd): 2.3 V ~ 2.75 V
• Data Converters: A/D 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 329-BBGA
• Supplier Device Package: 329-PBGA (31x31)

pacote: 329-BBGA

C515C8EMCAFXQMA1

Infineon Technologies

IC MCU 8BIT 64KB OTP 80MQFP

• Core Processor: C500
• Core Size: 8-Bit
• Speed: 10MHz
• Connectivity: CAN, EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 49
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: OTP
• EEPROM Size: -
• RAM Size: 2.5K x 8
• Voltage - Supply (Vcc/Vdd): 4.25 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 80-QFP
• Supplier Device Package: 80-MQFP (14x14)

pacote: 80-QFP

TVS3V3L4UE6327HTSA1

Infineon Technologies

TVS DIODE 3.3VWM 7.7VC SC74

• Type: Zener
• Unidirectional Channels: 4
• Bidirectional Channels: 2
• Voltage - Reverse Standoff (Typ): 3.3V (Max)
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: 7.7V (Typ)
• Current - Peak Pulse (10/1000µs): 20A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: Ethernet
• Capacitance @ Frequency: 2pF @ 1MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-74, SOT-457
• Supplier Device Package: SC-74

pacote: SC-74, SOT-457

IM393S6E2XKLA1

Infineon Technologies

POWER MODULE 600V 6A MDIP30

• Type: IGBT
• Configuration: 3 Phase Inverter
• Current: 6 A
• Voltage: 600 V
• Voltage - Isolation: 2000Vrms
• Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads

pacote: -

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S29GL01GS12DAE020

Infineon Technologies

IC FLASH 1GBIT CFI 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: CFI
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 120 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (9x9)

pacote: -

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IAUC100N04S6N028ATMA1

Infineon Technologies

IAUC100N04S6N028ATMA1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3V @ 24µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62W (Tc)
• Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

pacote: -

CYAT81688-100AA71

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

pacote: -

CY15V108QI-20LPXCT

Infineon Technologies

IC FRAM 8MBIT SPI 20MHZ 8GQFN

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 8Mbit
• Memory Interface: SPI
• Clock Frequency: 20 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20 ns
• Voltage - Supply: 1.71V ~ 1.89V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UQFN
• Supplier Device Package: 8-GQFN (3.23x3.28)

pacote: -

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TT142N14KOFHPSA1

Infineon Technologies

SCR MODULE 1.4KV 230A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.4 kV
• Current - On State (It (AV)) (Max): 142 A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module

pacote: -

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IPAN60R280P7SXKSA1

Infineon Technologies

MOSFET N-CH 650V 12A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 190µA
• Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 24W (Tc)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220 Full Pack
• Package / Case: TO-220-3 Full Pack

pacote: -

IMD112T6F040XUMA1

Infineon Technologies

IMOTION

• Motor Type - Stepper: Multiphase
• Motor Type - AC, DC: AC, Synchronous
• Function: Controller - Speed
• Output Configuration: Half Bridge (3)
• Interface: Serial, UART
• Technology: IGBT
• Step Resolution: -
• Applications: General Purpose
• Current - Output: -
• Voltage - Supply: 5.5V ~ 20V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-LQFP
• Supplier Device Package: PG-LQFP-40-1

pacote: -

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IPD70N12S311ATMA2

Infineon Technologies

MOSFET_(120V 300V)

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 83µA
• Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-11
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

pacote: -

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D970N06TXPSA1

Infineon Technologies

DIODE GEN PURP 600V 970A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 970A
• Voltage - Forward (Vf) (Max) @ If: 970 mV @ 750 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AA, A-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 180°C

pacote: -