Página 143 - Infineon Technologies Produtos

Nº de peças	Fabricante	Descrição	pacote	Estoque
IRG4BH20K-LPBF	Infineon Technologies	IGBT 1200V 11A 60W TO262 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A Power - Max: 60W Switching Energy: 450µJ (on), 440µJ (off) Input Type: Standard Gate Charge: 28nC Td (on/off) @ 25°C: 23ns/93ns Test Condition: 960V, 5A, 50 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262	pacote: TO-262-3 Long Leads, I2Pak, TO-262AA	Estoque6.912
IKD10N60RATMA1	Infineon Technologies	IGBT 600V 20A 150W TO252 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A Power - Max: 150W Switching Energy: 210µJ (on), 380µJ (off) Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25°C: 14ns/192ns Test Condition: 400V, 10A, 23 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque4.560
IRG4BC30FD-SPBF	Infineon Technologies	IGBT 600V 31A 100W D2PAK IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 124A Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Power - Max: 100W Switching Energy: 630µJ (on), 1.39mJ (off) Input Type: Standard Gate Charge: 51nC Td (on/off) @ 25°C: 42ns/230ns Test Condition: 480V, 17A, 23 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Estoque18.468
IRF2804	Infineon Technologies	MOSFET N-CH 40V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	pacote: TO-220-3	Estoque17.208
IPI90R800C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 6.9A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 460µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	pacote: TO-262-3 Long Leads, I2Pak, TO-262AA	Estoque3.168
IPS60R800CEAKMA1	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	pacote: -	Estoque2.064
IRFTS8342TRPBF	Infineon Technologies	MOSFET N-CH 30V 8.2A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	pacote: SOT-23-6	Estoque36.000
IRLR3915TRPBF	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	pacote: TO-252-3, DPak (2 Leads + Tab), SC-63	Estoque6.768
BF 5030R E6327	Infineon Technologies	MOSFET N-CH 8V 25MA SOT143R Transistor Type: N-Channel Frequency: 800MHz Gain: 24dB Voltage - Test: 3V Current Rating: 25mA Noise Figure: 1.3dB Current - Test: 10mA Power - Output: - Voltage - Rated: 8V Package / Case: SOT-143R Supplier Device Package: PG-SOT143R-4	pacote: SOT-143R	Estoque7.712
PTFB091507FHV1R250XTMA1	Infineon Technologies	IC AMP RF LDMOS Transistor Type: - Frequency: - Gain: - Voltage - Test: - Current Rating: - Noise Figure: - Current - Test: - Power - Output: - Voltage - Rated: - Package / Case: - Supplier Device Package: -	pacote: -	Estoque7.968
BDP954H6327XTSA1	Infineon Technologies	TRANS PNP 100V 3A SOT223 Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	pacote: TO-261-4, TO-261AA	Estoque6.480
BCR 148W H6433	Infineon Technologies	TRANS PREBIAS NPN 250MW SOT323-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	pacote: SC-70, SOT-323	Estoque7.904
BFR 182 E6327	Infineon Technologies	TRANSISTOR NPN RF 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz Gain: 12dB ~ 18dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	pacote: TO-236-3, SC-59, SOT-23-3	Estoque55.626
BC847PNB6327XT	Infineon Technologies	TRANS NPN/PNP 45V 0.1A SOT363-6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	pacote: 6-VSSOP, SC-88, SOT-363	Estoque4.464
IR3536MTRPBF	Infineon Technologies	IC CTRLR PWM 6-PHASE 48QFN Applications: Controller, DDR, Intel VR12, AMD SVI, PVI Voltage - Input: 3.3V Number of Outputs: 2 Voltage - Output: - Operating Temperature: -20°C ~ 85°C Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	pacote: 48-VFQFN Exposed Pad	Estoque55.656
ICE2QR2280ZXKLA1	Infineon Technologies	IC CTRLR SMPS QUASI-RESON 7DIP Output Isolation: Isolated Internal Switch(s): Yes Voltage - Breakdown: 800V Topology: Flyback Voltage - Start Up: 18V Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V Duty Cycle: 50% Frequency - Switching: 52kHz Power (Watts): 54W Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Control Features: - Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Supplier Device Package: PG-DIP-7 Mounting Type: Through Hole	pacote: 8-DIP (0.300", 7.62mm), 7 Leads	Estoque15.894
T3800N18TOFVTXPSA1	Infineon Technologies	T38001phacontrthyristdis3800A Structure: Single Number of SCRs, Diodes: 1 SCR Voltage - Off State: 1.8 kV Current - On State (It (AV)) (Max): 3800 A Current - On State (It (RMS)) (Max): 5970 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz Current - Hold (Ih) (Max): 300 mA Operating Temperature: 135°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-200AE	pacote: -	Request a Quote
TLE98912QTW60XUMA1	Infineon Technologies	EMBEDDED POWER Applications: BLDC Controller Core Processor: ARM® Cortex®-M3 Program Memory Type: EEPROM (8kB), FLASH (144kB) Controller Series: TLE989x RAM Size: 16K x 8 Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART Number of I/O: 8 Voltage - Supply: 5.5V ~ 28V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Supplier Device Package: PG-TQFP-48-10	pacote: -	Estoque7.500
CY9AF342NABGL-GK9E1	Infineon Technologies	IC MCU 32BIT 160KB FLASH 112FBGA Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 24x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 112-LFBGA Supplier Device Package: 112-PFBGA (10x10)	pacote: -	Request a Quote
CSD106ANPSA1	Infineon Technologies	MODULE GATE DRIVER Type: - Configuration: - Current: - Voltage: - Voltage - Isolation: - Package / Case: -	pacote: -	Request a Quote
CP7935ATT	Infineon Technologies	INFINEON Type: - Protocol: - Number of Drivers/Receivers: - Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	pacote: -	Request a Quote
TLS820F3ELV50XUMA1	Infineon Technologies	OPTIREG LINEAR PG-SSOP-14 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 42V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.48V @ 200mA Current - Output: 200mA Current - Quiescent (Iq): 55 µA Current - Supply (Max): 55 µA PSRR: 60dB (100Hz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: PG-SSOP-14	pacote: -	Estoque6.525
SPA06N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 6.2A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	pacote: -	Request a Quote
CY9BF129SAPMC-GK7CGE2	Infineon Technologies	IC MCU 32BT 1.5625MB FLSH 144QFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 60MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 122 Program Memory Size: 1.5625MB (1.5625M x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 192K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 24x12b; D/A 2x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 144-LQFP Supplier Device Package: 144-LQFP (20x20)	pacote: -	Request a Quote
BSC007N04LS6SCATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 188W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	pacote: -	Estoque8.514
IQE065N10NM5ATMA1	Infineon Technologies	TRENCH >=100V PG-TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 48µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-4 Package / Case: 8-PowerTDFN	pacote: -	Estoque84.990
CY9BF121JLPMC-G-JNE2	Infineon Technologies	MULTI-MARKET MCUS Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 72MHz Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 23 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 8K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 8x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 32-LQFP Supplier Device Package: 32-LQFP (7x7)	pacote: -	Request a Quote
CY8C4147AZE-S475T	Infineon Technologies	IC MCU 32BIT 128KB FLASH 64TQFP Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Speed: 24MHz Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Number of I/O: 54 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Data Converters: A/D 16x10b, 20x12b SAR Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	pacote: -	Request a Quote
IRFH5020TR2PBF	Infineon Technologies	MOSFET N-CH 200V 5.1A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerVDFN	pacote: -	Request a Quote
S80KS2562GABHM023	Infineon Technologies	IC PSRAM 256MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 256Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	pacote: -	Request a Quote

IRG4BH20K-LPBF

Infineon Technologies

IGBT 1200V 11A 60W TO262

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 11A
Current - Collector Pulsed (Icm): 22A
Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
Power - Max: 60W
Switching Energy: 450µJ (on), 440µJ (off)
Input Type: Standard
Gate Charge: 28nC
Td (on/off) @ 25°C: 23ns/93ns
Test Condition: 960V, 5A, 50 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262

pacote: TO-262-3 Long Leads, I2Pak, TO-262AA

Estoque6.912

IKD10N60RATMA1

Infineon Technologies

IGBT 600V 20A 150W TO252

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 20A
Current - Collector Pulsed (Icm): 30A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Power - Max: 150W
Switching Energy: 210µJ (on), 380µJ (off)
Input Type: Standard
Gate Charge: 64nC
Td (on/off) @ 25°C: 14ns/192ns
Test Condition: 400V, 10A, 23 Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque4.560

IRG4BC30FD-SPBF

Infineon Technologies

IGBT 600V 31A 100W D2PAK

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 31A
Current - Collector Pulsed (Icm): 124A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Power - Max: 100W
Switching Energy: 630µJ (on), 1.39mJ (off)
Input Type: Standard
Gate Charge: 51nC
Td (on/off) @ 25°C: 42ns/230ns
Test Condition: 480V, 17A, 23 Ohm, 15V
Reverse Recovery Time (trr): 42ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK

pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Estoque18.468

IRF2804

Infineon Technologies

MOSFET N-CH 40V 75A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

pacote: TO-220-3

Estoque17.208

IPI90R800C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 6.9A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 460µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

pacote: TO-262-3 Long Leads, I2Pak, TO-262AA

Estoque3.168

IPS60R800CEAKMA1

Infineon Technologies

CONSUMER

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

pacote: -

Estoque2.064

IRFTS8342TRPBF

Infineon Technologies

MOSFET N-CH 30V 8.2A 6TSOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6

pacote: SOT-23-6

Estoque36.000

IRLR3915TRPBF

Infineon Technologies

MOSFET N-CH 55V 30A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 14 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

pacote: TO-252-3, DPak (2 Leads + Tab), SC-63

Estoque6.768

BF 5030R E6327

Infineon Technologies

MOSFET N-CH 8V 25MA SOT143R

Transistor Type: N-Channel
Frequency: 800MHz
Gain: 24dB
Voltage - Test: 3V
Current Rating: 25mA
Noise Figure: 1.3dB
Current - Test: 10mA
Power - Output: -
Voltage - Rated: 8V
Package / Case: SOT-143R
Supplier Device Package: PG-SOT143R-4

pacote: SOT-143R

Estoque7.712

PTFB091507FHV1R250XTMA1

Infineon Technologies

IC AMP RF LDMOS

Transistor Type: -
Frequency: -
Gain: -
Voltage - Test: -
Current Rating: -
Noise Figure: -
Current - Test: -
Power - Output: -
Voltage - Rated: -
Package / Case: -
Supplier Device Package: -

pacote: -

Estoque7.968

BDP954H6327XTSA1

Infineon Technologies

TRANS PNP 100V 3A SOT223

Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Power - Max: 5W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

pacote: TO-261-4, TO-261AA

Estoque6.480

BCR 148W H6433

Infineon Technologies

TRANS PREBIAS NPN 250MW SOT323-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

pacote: SC-70, SOT-323

Estoque7.904

BFR 182 E6327

Infineon Technologies

TRANSISTOR NPN RF 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain: 12dB ~ 18dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

pacote: TO-236-3, SC-59, SOT-23-3

Estoque55.626

BC847PNB6327XT

Infineon Technologies

TRANS NPN/PNP 45V 0.1A SOT363-6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

pacote: 6-VSSOP, SC-88, SOT-363

Estoque4.464

IR3536MTRPBF

Infineon Technologies

IC CTRLR PWM 6-PHASE 48QFN

Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Voltage - Input: 3.3V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: -20°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

pacote: 48-VFQFN Exposed Pad

Estoque55.656

ICE2QR2280ZXKLA1

Infineon Technologies

IC CTRLR SMPS QUASI-RESON 7DIP

Output Isolation: Isolated
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Topology: Flyback
Voltage - Start Up: 18V
Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
Duty Cycle: 50%
Frequency - Switching: 52kHz
Power (Watts): 54W
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Control Features: -
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Supplier Device Package: PG-DIP-7
Mounting Type: Through Hole

pacote: 8-DIP (0.300", 7.62mm), 7 Leads

Estoque15.894

T3800N18TOFVTXPSA1

Infineon Technologies

T38001phacontrthyristdis3800A

Structure: Single
Number of SCRs, Diodes: 1 SCR
Voltage - Off State: 1.8 kV
Current - On State (It (AV)) (Max): 3800 A
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE

pacote: -

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TLE98912QTW60XUMA1

Infineon Technologies

EMBEDDED POWER

Applications: BLDC Controller
Core Processor: ARM® Cortex®-M3
Program Memory Type: EEPROM (8kB), FLASH (144kB)
Controller Series: TLE989x
RAM Size: 16K x 8
Interface: CANbus, DMA, GPIO, SPI, SSC, UART/USART
Number of I/O: 8
Voltage - Supply: 5.5V ~ 28V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Supplier Device Package: PG-TQFP-48-10

pacote: -

Estoque7.500

CY9AF342NABGL-GK9E1

Infineon Technologies

IC MCU 32BIT 160KB FLASH 112FBGA

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 160KB (160K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 24x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Supplier Device Package: 112-PFBGA (10x10)

pacote: -

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CSD106ANPSA1

Infineon Technologies

MODULE GATE DRIVER

Type: -
Configuration: -
Current: -
Voltage: -
Voltage - Isolation: -
Package / Case: -

pacote: -

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CP7935ATT

Infineon Technologies

INFINEON

Type: -
Protocol: -
Number of Drivers/Receivers: -
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

pacote: -

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TLS820F3ELV50XUMA1

Infineon Technologies

OPTIREG LINEAR PG-SSOP-14

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 42V
Voltage - Output (Min/Fixed): 5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.48V @ 200mA
Current - Output: 200mA
Current - Quiescent (Iq): 55 µA
Current - Supply (Max): 55 µA
PSRR: 60dB (100Hz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: PG-SSOP-14

pacote: -

Estoque6.525

SPA06N60C3XKSA1

Infineon Technologies

MOSFET N-CH 650V 6.2A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-31
Package / Case: TO-220-3 Full Pack

pacote: -

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CY9BF129SAPMC-GK7CGE2

Infineon Technologies

IC MCU 32BT 1.5625MB FLSH 144QFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 60MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 122
Program Memory Size: 1.5625MB (1.5625M x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 192K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 24x12b; D/A 2x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Supplier Device Package: 144-LQFP (20x20)

pacote: -

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BSC007N04LS6SCATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 381A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

pacote: -

Estoque8.514

IQE065N10NM5ATMA1

Infineon Technologies

TRENCH >=100V PG-TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 48µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-4
Package / Case: 8-PowerTDFN

pacote: -

Estoque84.990

CY9BF121JLPMC-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 72MHz
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 23
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 8K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 8x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Supplier Device Package: 32-LQFP (7x7)

pacote: -

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CY8C4147AZE-S475T

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64TQFP

Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Number of I/O: 54
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Data Converters: A/D 16x10b, 20x12b SAR
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

pacote: -

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IRFH5020TR2PBF

Infineon Technologies

MOSFET N-CH 200V 5.1A 8PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 100 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 55mOhm @ 7.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerVDFN

pacote: -

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S80KS2562GABHM023

Infineon Technologies

IC PSRAM 256MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 256Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

pacote: -

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