Página 28 - Transistores - IGBT - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - IGBT - Simples

Registros 4.424
Página  28/158
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PK35UD1MPBF
Infineon Technologies

IGBT 1200V ULTRA FAST TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Estoque6.384
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG7CH35UEF
Infineon Technologies

IGBT 1200V ULTRA FAST DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 5A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 85nC
  • Td (on/off) @ 25°C: 30ns/160ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacote: Die
Estoque3.424
1200V
-
-
1.6V @ 15V, 5A
-
-
Standard
85nC
30ns/160ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRG8P50N120KDPBF
Infineon Technologies

IGBT 1200V 80A 305W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 350W
  • Switching Energy: 2.3mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 315nC
  • Td (on/off) @ 25°C: 35ns/190ns
  • Test Condition: 600V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacote: TO-247-3
Estoque3.328
1200V
80A
105A
2V @ 15V, 35A
350W
2.3mJ (on), 1.9mJ (off)
Standard
315nC
35ns/190ns
600V, 35A, 5 Ohm, 15V
170ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRGP4262DPBF
Infineon Technologies

IGBT 650V 60A 250W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 520µJ (on), 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 70nC
  • Td (on/off) @ 25°C: 24ns/73ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacote: TO-247-3
Estoque7.120
650V
60A
96A
2.1V @ 15V, 24A
250W
520µJ (on), 240µJ (off)
Standard
70nC
24ns/73ns
400V, 24A, 10 Ohm, 15V
170ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4P254SPBF
Infineon Technologies

IGBT 250V 98A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Current - Collector (Ic) (Max): 98A
  • Current - Collector Pulsed (Icm): 196A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 55A
  • Power - Max: 200W
  • Switching Energy: 380µJ (on), 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 40ns/270ns
  • Test Condition: 200V, 55A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacote: TO-247-3
Estoque162.000
250V
98A
196A
1.5V @ 15V, 55A
200W
380µJ (on), 3.5mJ (off)
Standard
200nC
40ns/270ns
200V, 55A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IXGR50N60C2D1
IXYS

IGBT 600V 75A 200W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
  • Power - Max: 200W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 138nC
  • Td (on/off) @ 25°C: 18ns/115ns
  • Test Condition: 480V, 40A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
pacote: ISOPLUS247?
Estoque7.664
600V
75A
300A
2.7V @ 15V, 40A
200W
380µJ (off)
Standard
138nC
18ns/115ns
480V, 40A, 2 Ohm, 15V
35ns
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
STGP12NB60HD
STMicroelectronics

IGBT 600V 30A 125W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 12A
  • Power - Max: 125W
  • Switching Energy: 210µJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 5ns/91ns
  • Test Condition: 480V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 80ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacote: TO-220-3
Estoque6.320
600V
30A
60A
2.8V @ 15V, 12A
125W
210µJ (off)
Standard
68nC
5ns/91ns
480V, 12A, 10 Ohm, 15V
80ns
150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IRGSL10B60KDPBF
Infineon Technologies

IGBT 600V 22A 156W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 156W
  • Switching Energy: 140µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 30ns/230ns
  • Test Condition: 400V, 10A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA
Estoque17.196
600V
22A
44A
2.2V @ 15V, 10A
156W
140µJ (on), 250µJ (off)
Standard
38nC
30ns/230ns
400V, 10A, 47 Ohm, 15V
90ns
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
AIHD10N60RFATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 190µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/168ns
  • Test Condition: 400V, 10A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque2.192
600V
20A
30A
2.5V @ 15V, 10A
150W
190µJ (on), 160µJ (off)
Standard
64nC
12ns/168ns
400V, 10A, 26 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXGH10N100A
IXYS

IGBT 1000V 20A 100W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
pacote: TO-247-3
Estoque7.824
1000V
20A
-
4V @ 15V, 10A
100W
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGP12N100A
IXYS

IGBT 1000V 24A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 48A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 100ns/850ns
  • Test Condition: 800V, 12A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacote: TO-220-3
Estoque5.056
1000V
24A
48A
4V @ 15V, 12A
100W
2.5mJ (off)
Standard
65nC
100ns/850ns
800V, 12A, 120 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
APT33GF120B2RDQ2G
Microsemi Corporation

IGBT 1200V 64A 357W TMAX

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 64A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
  • Power - Max: 357W
  • Switching Energy: 1.315µJ (on), 1.515µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 14ns/185ns
  • Test Condition: 800V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
pacote: TO-247-3 Variant
Estoque5.248
1200V
64A
75A
3V @ 15V, 25A
357W
1.315µJ (on), 1.515µJ (off)
Standard
170nC
14ns/185ns
800V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
STGB10M65DF2
STMicroelectronics

IGBT 650V 10A D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 115W
  • Switching Energy: 120µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 19ns/91ns
  • Test Condition: 400V, 10A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 96ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque4.320
650V
20A
40A
2V @ 15V, 10A
115W
120µJ (on), 270µJ (off)
Standard
28nC
19ns/91ns
400V, 10A, 22 Ohm, 15V
96ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
AOTF20B65M2
Alpha & Omega Semiconductor Inc.

IGBT 650V 20A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
  • Power - Max: 45W
  • Switching Energy: 580µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 26ns/123ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 292ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
pacote: TO-220-3
Estoque18.768
650V
40A
60A
2.15V @ 15V, 20A
45W
580µJ (on), 280µJ (off)
Standard
46nC
26ns/123ns
400V, 20A, 15 Ohm, 15V
292ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
STGFW30H65FB
STMicroelectronics

IGBT 650V 60A 58W TO3PF

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 58W
  • Switching Energy: 151µJ (on), 293µJ (off)
  • Input Type: Standard
  • Gate Charge: 149nC
  • Td (on/off) @ 25°C: 37ns/146ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PF-3
pacote: TO-3PFM, SC-93-3
Estoque9.300
650V
60A
120A
2V @ 15V, 30A
58W
151µJ (on), 293µJ (off)
Standard
149nC
37ns/146ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-3PFM, SC-93-3
TO-3PF-3
STGB10NC60KT4
STMicroelectronics

IGBT 600V 20A 65W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
  • Power - Max: 65W
  • Switching Energy: 55µJ (on), 85µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 17ns/72ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque21.540
600V
20A
30A
2.5V @ 15V, 5A
65W
55µJ (on), 85µJ (off)
Standard
19nC
17ns/72ns
390V, 5A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRG4PC30WPBF
Infineon Technologies

IGBT 600V 23A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
pacote: TO-247-3
Estoque7.696
600V
23A
92A
2.7V @ 15V, 12A
100W
130µJ (on), 130µJ (off)
Standard
51nC
25ns/99ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
AOK40B65M3
Alpha & Omega Semiconductor Inc.

IGBT 650V 40A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
  • Power - Max: 300W
  • Switching Energy: 1.3mJ (on), 500µJ (off)
  • Input Type: Standard
  • Gate Charge: 59nC
  • Td (on/off) @ 25°C: 40ns/125ns
  • Test Condition: 400V, 40A, 7.5 Ohm, 15V
  • Reverse Recovery Time (trr): 365ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
pacote: TO-247-3
Estoque8.064
650V
80A
120A
2.45V @ 15V, 40A
300W
1.3mJ (on), 500µJ (off)
Standard
59nC
40ns/125ns
400V, 40A, 7.5 Ohm, 15V
365ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
AUIRGPS4067D1
Infineon Technologies

IGBT 600V 240A 750W TO-274

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
  • Power - Max: 750W
  • Switching Energy: 8.2mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 360nC
  • Td (on/off) @ 25°C: 69ns/198ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 360ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: SUPER-247 (TO-274AA)
pacote: TO-247-3
Estoque8.724
600V
240A
360A
2.05V @ 15V, 120A
750W
8.2mJ (on), 2.9mJ (off)
Standard
360nC
69ns/198ns
400V, 120A, 4.7 Ohm, 15V
360ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
SUPER-247 (TO-274AA)
hot FGH40T100SMD
Fairchild/ON Semiconductor

IGBT 1000V 80A 333W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 333W
  • Switching Energy: 2.35mJ (on), 1.15mJ (off)
  • Input Type: Standard
  • Gate Charge: 265nC
  • Td (on/off) @ 25°C: 29ns/285ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 78ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacote: TO-247-3
Estoque236.052
1000V
80A
120A
2.3V @ 15V, 40A
333W
2.35mJ (on), 1.15mJ (off)
Standard
265nC
29ns/285ns
600V, 40A, 10 Ohm, 15V
78ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
NTE3322
NTE Electronics, Inc

IGBT 900V 60A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 900 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
  • Power - Max: 170 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 460ns/600ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 2.5 µs
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
pacote: -
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900 V
60 A
120 A
2.7V @ 15V, 60A
170 W
-
Standard
-
460ns/600ns
-
2.5 µs
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXXH30N65B4D1
IXYS

IGBT 650V 70A TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 70 A
  • Current - Collector Pulsed (Icm): 146 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 230 W
  • Switching Energy: 1.04mJ (on), 730µJ (off)
  • Input Type: Standard
  • Gate Charge: 52 nC
  • Td (on/off) @ 25°C: 20ns/150ns
  • Test Condition: 400V, 30A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 65 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXXH)
pacote: -
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650 V
70 A
146 A
2.1V @ 15V, 30A
230 W
1.04mJ (on), 730µJ (off)
Standard
52 nC
20ns/150ns
400V, 30A, 15Ohm, 15V
65 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXXH)
IGC54T65R3QEX1SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacote: -
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650 V
100 A
300 A
2.22V @ 15V, 100A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC54T60R3EX1SA2
Infineon Technologies

IGBT TRENCH FS 600V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacote: -
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600 V
100 A
300 A
1.85V @ 15V, 100A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IXYN120N65B3D1
IXYS

IGBT PT 650V 250A SOT227B

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 250 A
  • Current - Collector Pulsed (Icm): 770 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
  • Power - Max: 830 W
  • Switching Energy: 1.34mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 250 nC
  • Td (on/off) @ 25°C: 30ns/168ns
  • Test Condition: 400V, 50A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 28 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
pacote: -
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650 V
250 A
770 A
1.9V @ 15V, 100A
830 W
1.34mJ (on), 1.5mJ (off)
Standard
250 nC
30ns/168ns
400V, 50A, 2Ohm, 15V
28 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
RJP30E2DPP-M0-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGT8NS65DGC9
Rohm Semiconductor

IGBT TRENCH FIELD 650V 8A TO262

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 8 A
  • Current - Collector Pulsed (Icm): 12 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 65 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 13.5 nC
  • Td (on/off) @ 25°C: 17ns/69ns
  • Test Condition: 400V, 4A, 50Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262
pacote: -
Estoque2.895
650 V
8 A
12 A
2.1V @ 15V, 4A
65 W
-
Standard
13.5 nC
17ns/69ns
400V, 4A, 50Ohm, 15V
40 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262
RGT40TS65DGC13
Rohm Semiconductor

IGBT TRENCH FS 650V 40A TO247G

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 144 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40 nC
  • Td (on/off) @ 25°C: 22ns/75ns
  • Test Condition: 400V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247G
pacote: -
Estoque1.350
650 V
40 A
60 A
2.1V @ 15V, 20A
144 W
-
Standard
40 nC
22ns/75ns
400V, 20A, 10Ohm, 15V
58 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247G