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Transistores - IGBT - Simples

Registros 4.424
Página  158/158
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG7PK35UD1-EPBF
Infineon Technologies

IGBT 1400V 40A 167W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: -/150ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacote: TO-247-3
Estoque2.064
1400V
40A
200A
2.35V @ 15V, 20A
167W
650µJ (off)
Standard
98nC
-/150ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
IRG4BC30U-S
Infineon Technologies

IGBT 600V 23A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 17ns/78ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque3.776
600V
23A
92A
2.1V @ 15V, 12A
100W
160µJ (on), 200µJ (off)
Standard
50nC
17ns/78ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot TIG066SS-TL-E
ON Semiconductor

IGBT 400V 8SOP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 4V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP
pacote: 8-SOIC (0.173", 4.40mm Width)
Estoque66.000
400V
-
150A
5V @ 4V, 150A
-
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP
IXGT32N60C
IXYS

IGBT 600V 60A 200W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
  • Power - Max: 200W
  • Switching Energy: 320µJ (off)
  • Input Type: Standard
  • Gate Charge: 110nC
  • Td (on/off) @ 25°C: 25ns/85ns
  • Test Condition: 480V, 32A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
pacote: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Estoque6.688
600V
60A
120A
2.5V @ 15V, 32A
200W
320µJ (off)
Standard
110nC
25ns/85ns
480V, 32A, 4.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGH20N60BU1
IXYS

IGBT 600V 40A 150W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
pacote: TO-247-3
Estoque2.768
600V
40A
-
2V @ 15V, 20A
150W
-
Standard
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGP16N60C2
IXYS

IGBT 600V 40A 150W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
  • Power - Max: 150W
  • Switching Energy: 160µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 16ns/75ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacote: TO-220-3
Estoque4.848
600V
40A
100A
3V @ 15V, 12A
150W
160µJ (on), 90µJ (off)
Standard
25nC
16ns/75ns
400V, 12A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot HGTP7N60A4D
Fairchild/ON Semiconductor

IGBT 600V 34A 125W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
  • Power - Max: 125W
  • Switching Energy: 55µJ (on), 60µJ (off)
  • Input Type: Standard
  • Gate Charge: 37nC
  • Td (on/off) @ 25°C: 11ns/100ns
  • Test Condition: 390V, 7A, 25 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacote: TO-220-3
Estoque96.300
600V
34A
56A
2.7V @ 15V, 7A
125W
55µJ (on), 60µJ (off)
Standard
37nC
11ns/100ns
390V, 7A, 25 Ohm, 15V
34ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXYX100N120C3
IXYS

IGBT 1200V 188A 1150W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 188A
  • Current - Collector Pulsed (Icm): 490A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
  • Power - Max: 1150W
  • Switching Energy: 6.5mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 270nC
  • Td (on/off) @ 25°C: 32ns/123ns
  • Test Condition: 600V, 100A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
pacote: TO-247-3
Estoque2.416
1200V
188A
490A
3.5V @ 15V, 100A
1150W
6.5mJ (on), 2.9mJ (off)
Standard
270nC
32ns/123ns
600V, 100A, 1 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGX72N60C3H1
IXYS

IGBT 600V 75A 540W PLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
  • Power - Max: 540W
  • Switching Energy: 1.03mJ (on), 480µJ (off)
  • Input Type: Standard
  • Gate Charge: 174nC
  • Td (on/off) @ 25°C: 27ns/77ns
  • Test Condition: 480V, 50A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
pacote: TO-247-3
Estoque3.424
600V
75A
360A
2.5V @ 15V, 50A
540W
1.03mJ (on), 480µJ (off)
Standard
174nC
27ns/77ns
480V, 50A, 2 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGH120N30C3
IXYS

IGBT 300V 75A 540W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 600A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
  • Power - Max: 540W
  • Switching Energy: 230µJ (on), 730µJ (off)
  • Input Type: Standard
  • Gate Charge: 230nC
  • Td (on/off) @ 25°C: 28ns/109ns
  • Test Condition: 200V, 60A, 2 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
pacote: TO-247-3
Estoque7.440
300V
75A
600A
2.1V @ 15V, 120A
540W
230µJ (on), 730µJ (off)
Standard
230nC
28ns/109ns
200V, 60A, 2 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGA20N100
IXYS

IGBT 1000V 40A 150W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 73nC
  • Td (on/off) @ 25°C: 30ns/350ns
  • Test Condition: 800V, 20A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque2.544
1000V
40A
80A
3V @ 15V, 20A
150W
3.5mJ (off)
Standard
73nC
30ns/350ns
800V, 20A, 47 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IKW75N65EH5XKSA1
Infineon Technologies

IGBT 650V 75A FAST DIODE TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 395W
  • Switching Energy: 2.3mJ (on), 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 160nC
  • Td (on/off) @ 25°C: 28ns/174ns
  • Test Condition: 400V, 75A, 8 Ohm, 15V
  • Reverse Recovery Time (trr): 92ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
pacote: TO-247-3
Estoque7.840
650V
90A
300A
2.1V @ 15V, 75A
395W
2.3mJ (on), 900µJ (off)
Standard
160nC
28ns/174ns
400V, 75A, 8 Ohm, 15V
92ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
STGWA25H120DF2
STMicroelectronics

IGBT HB 1200V 25A HS TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A
  • Power - Max: 375W
  • Switching Energy: 600µJ (on), 700µJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 29ns/130ns
  • Test Condition: 600V, 25A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 303ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacote: TO-247-3
Estoque5.376
1200V
50A
100A
2.6V @ 15V, 25A
375W
600µJ (on), 700µJ (off)
Standard
100nC
29ns/130ns
600V, 25A, 10 Ohm, 15V
303ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IXYH16N170CV1
IXYS

IGBT 1.7KV 40A TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
  • Power - Max: 310W
  • Switching Energy: 2.1mJ (on), 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 56nC
  • Td (on/off) @ 25°C: 11ns/140ns
  • Test Condition: 850V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
pacote: TO-247-3
Estoque5.712
1700V
40A
100A
3.8V @ 15V, 16A
310W
2.1mJ (on), 1.5mJ (off)
Standard
56nC
11ns/140ns
850V, 16A, 10 Ohm, 15V
150ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
AUIRGF65A40D0
Infineon Technologies

DISCRETES

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
pacote: TO-247-3
Estoque7.520
-
-
-
-
-
-
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247AD
FGH40N60SMDF_F085
Fairchild/ON Semiconductor

IGBT 600V 80A 349W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 349W
  • Switching Energy: 1.3mJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 122nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 40A, 6 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacote: TO-247-3
Estoque8.556
600V
80A
120A
2.5V @ 15V, 40A
349W
1.3mJ (on), 260µJ (off)
Standard
122nC
18ns/110ns
400V, 40A, 6 Ohm, 15V
90ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
STGB20V60DF
STMicroelectronics

IGBT 600V 40A 167W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
  • Power - Max: 167W
  • Switching Energy: 200µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 116nC
  • Td (on/off) @ 25°C: 38ns/149ns
  • Test Condition: 400V, 20A, 15V
  • Reverse Recovery Time (trr): 40ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque6.816
600V
40A
80A
2.2V @ 15V, 20A
167W
200µJ (on), 130µJ (off)
Standard
116nC
38ns/149ns
400V, 20A, 15V
40ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
STGD10NC60ST4
STMicroelectronics

IGBT 600V 18A 60W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 18A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 18nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 390V, 5A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque7.952
600V
18A
25A
1.65V @ 15V, 5A
60W
60µJ (on), 340µJ (off)
Standard
18nC
19ns/160ns
390V, 5A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
TIG067SS-TL-2W
ON Semiconductor

IGBT 400V 150A 8SOIC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 4V, 150A
  • Power - Max: 1.2W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
pacote: 8-SOIC (0.154", 3.90mm Width)
Estoque6.176
400V
-
150A
5V @ 4V, 150A
1.2W
-
Standard
-
-
-
-
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IRGB14C40LPBF
Infineon Technologies

IGBT 430V 20A 125W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 430V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 900ns/6µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
pacote: TO-220-3
Estoque222.744
430V
20A
-
1.75V @ 5V, 14A
125W
-
Logic
27nC
900ns/6µs
-
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220AB
STGI25N36LZAG
STMicroelectronics

DISCRETE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 350 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): 50 A
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 25.7 nC
  • Td (on/off) @ 25°C: 1.1µs/7.4µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262 (I2PAK)
pacote: -
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350 V
25 A
50 A
1.25V @ 4V, 6A
150 W
-
Logic
25.7 nC
1.1µs/7.4µs
-
-
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262 (I2PAK)
RGWX5TS65EHRC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 132A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 132 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
  • Power - Max: 348 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 213 nC
  • Td (on/off) @ 25°C: 59ns/243ns
  • Test Condition: 400V, 37.5A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 100 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacote: -
Estoque1.350
650 V
132 A
300 A
1.9V @ 15V, 75A
348 W
-
Standard
213 nC
59ns/243ns
400V, 37.5A, 10Ohm, 15V
100 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IXYA20N120C3HV
IXYS

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 96 A
  • Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
  • Power - Max: 278 W
  • Switching Energy: 1.3mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 53 nC
  • Td (on/off) @ 25°C: 20ns/90ns
  • Test Condition: 600V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 29 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263HV
pacote: -
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1200 V
40 A
96 A
3.4V @ 15V, 20A
278 W
1.3mJ (on), 1mJ (off)
Standard
53 nC
20ns/90ns
600V, 20A, 10Ohm, 15V
29 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263HV
MGD633
Sanken Electric USA Inc.

IGBT WITH FRD 600V/37A/VCE1.8V

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 65 nC
  • Td (on/off) @ 25°C: 75ns/300ns
  • Test Condition: 300V, 50A, 39Ohm, 15V
  • Reverse Recovery Time (trr): 350 ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
pacote: -
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600 V
50 A
100 A
2.4V @ 15V, 50A
150 W
-
Standard
65 nC
75ns/300ns
300V, 50A, 39Ohm, 15V
350 ns
150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIGC10T60EX7SA3
Infineon Technologies

IGBT TRENCH FS 600V 20A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacote: -
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600 V
20 A
60 A
1.9V @ 15V, 20A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IPF011N08NM6ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
pacote: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGW60TS65DGC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 60A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 178 W
  • Switching Energy: 480µJ (on), 490µJ (off)
  • Input Type: Standard
  • Gate Charge: 84 nC
  • Td (on/off) @ 25°C: 37ns/114ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 92 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
pacote: -
Estoque1.350
650 V
60 A
120 A
1.9V @ 15V, 30A
178 W
480µJ (on), 490µJ (off)
Standard
84 nC
37ns/114ns
400V, 30A, 10Ohm, 15V
92 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
SIGC18T60NCX1SA5
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
pacote: -
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600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die