Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix |
MOSFET N-CH 100V 3.8A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque184.788 |
|
MOSFET (Metal Oxide) | 100V | 3.8A (Tc) | 6V, 10V | 4V @ 250µA | 11nC @ 10V | 370pF @ 50V | ±20V | - | 2.4W (Ta), 4.8W (Tc) | 158 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET 30V 57A NFETU8FL
|
pacote: 8-PowerWDFN |
Estoque702.000 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
ON Semiconductor |
MOSFET N-CH 60V 24A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque4.832 |
|
MOSFET (Metal Oxide) | 60V | 24A (Ta) | 10V | 4V @ 250µA | 48nC @ 10V | 1200pF @ 25V | ±20V | - | 1.36W (Ta), 62.5W (Tj) | 42 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
NXP |
MOSFET N-CH 60V 75A TO220AB
|
pacote: TO-220-3 |
Estoque2.320 |
|
MOSFET (Metal Oxide) | 60V | 75A (Tc) | - | 4V @ 1mA | 168nC @ 10V | 8300pF @ 25V | - | - | - | 3.6 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 50A D-PAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque125.136 |
|
MOSFET (Metal Oxide) | 60V | 9.5A (Ta), 50A (Tc) | 5V, 10V | 3V @ 250µA | 32nC @ 5V | 2810pF @ 25V | ±20V | - | 125W (Tc) | 11.6 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 20V 6.9A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque6.672 |
|
MOSFET (Metal Oxide) | 20V | 6.9A (Ta) | 2.5V, 4.5V | 450mV @ 250µA | 32nC @ 4.5V | 3200pF @ 10V | ±8V | - | 1.38W (Tj) | 19 mOhm @ 6.9A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 1000V 1.4A TO-262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque3.440 |
|
MOSFET (Metal Oxide) | 1000V | 1.4A (Ta) | 10V | 4V @ 250µA | 38nC @ 10V | 500pF @ 25V | ±20V | - | - | 11 Ohm @ 840mA, 10V | - | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
pacote: - |
Estoque3.456 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH TO262-3
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque3.280 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.2V @ 120µA | 92nC @ 10V | 5430pF @ 25V | +5V, -16V | - | 75W (Tc) | 8.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A IPAK
|
pacote: TO-251-3 Stub Leads, IPak |
Estoque4.384 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | ±30V | - | 80W (Tc) | 430 mOhm @ 4.9A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
ON Semiconductor |
MOSFET N-CH 40V SO8FL
|
pacote: 8-PowerTDFN, 5 Leads |
Estoque3.440 |
|
MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 4V @ 250µA | 128nC @ 10V | 8400pF @ 25V | ±20V | - | 3.9W (Ta), 200W (Tc) | 0.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
STMicroelectronics |
MOSFET N-CH 650V I2PAK-FP
|
pacote: - |
Estoque5.712 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
pacote: 8-PowerTDFN |
Estoque5.408 |
|
MOSFET (Metal Oxide) | 30V | 88A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 19nC @ 10V | 1133pF @ 15V | ±20V | - | 78W (Tc) | 6.1 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
Central Semiconductor Corp |
MOSFET N-CH 11A 600V TO-220FP
|
pacote: TO-220-3 Full Pack |
Estoque17.148 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 4V @ 250µA | 23.05nC @ 10V | 763pF @ 100V | 30V | - | 25W (Tc) | 360 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET N-CH 500V 11A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque6.528 |
|
MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 4V @ 250µA | 52nC @ 10V | 1423pF @ 25V | ±30V | - | 170W (Tc) | 520 mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 2.6A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque53.856 |
|
MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 460pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 2.7 Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET P-CH 12V SC-89
|
pacote: SC-89, SOT-490 |
Estoque2.816 |
|
MOSFET (Metal Oxide) | 12V | - | 1.2V, 4.5V | 800mV @ 250µA | 4nC @ 4.5V | 62pF @ 6V | ±5V | - | 190mW (Ta) | 640 mOhm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
||
Microchip Technology |
MOSFET N-CH 60V 0.23A TO92-3
|
pacote: TO-226-3, TO-92-3 (TO-226AA) |
Estoque6.684 |
|
MOSFET (Metal Oxide) | 60V | 230mA (Tj) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 400mW (Ta), 1W (Tc) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
IXYS |
MOSFET N-CH 200V 230A PLUS247
|
pacote: TO-247-3 |
Estoque19.308 |
|
MOSFET (Metal Oxide) | 200V | 230A (Tc) | 10V | 5V @ 8mA | 378nC @ 10V | 28000pF @ 25V | ±20V | - | 1670W (Tc) | 7.5 mOhm @ 60A, 10V | - | Through Hole | PLUS247?-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 1200V 12A TO220
|
pacote: TO-220-3 |
Estoque15.630 |
|
MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 5V @ 100µA | 44.2nC @ 10V | 1370pF @ 100V | ±30V | - | 250W (Tc) | 690 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
YAGEO XSEMI |
MOSFET P-CH 30V 14.6A PMPAK
|
pacote: - |
Estoque3.000 |
|
MOSFET (Metal Oxide) | 30 V | 14.6A (Ta) | 4.5V, 10V | 3V @ 250µA | 54.4 nC @ 4.5 V | 6080 pF @ 15 V | ±20V | - | 3.12W (Ta) | 10mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PMPAK® 3 x 3 | 8-PowerDFN |
||
onsemi |
NFET DPAK 30V 41A 8MO
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
N-CHANNEL 30-V (D-S) MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 3.16A (Ta) | 4.5V, 10V | 3V @ 250µA | 4.5 nC @ 5 V | 305 pF @ 15 V | ±20V | - | 750mW (Ta) | 47mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 65 V | 21.8A (Ta), 81.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 51.4 nC @ 10 V | 2626 pF @ 30 V | ±20V | - | 3.14W (Ta), 44W (Tc) | 4.4mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Estoque24.477 |
|
MOSFET (Metal Oxide) | 40 V | 9A (Ta), 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | 2767 pF @ 25 V | ±20V | - | 2W (Ta), 63W (Tc) | 12mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
onsemi |
MOSFET N-CH 650V 58A TO247-3
|
pacote: - |
Estoque1.335 |
|
MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 5V @ 1.7mA | 125 nC @ 10 V | 5017 pF @ 400 V | ±30V | - | 378W (Tc) | 50mOhm @ 29A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Micro Commercial Co |
P-CHANNEL MOSFET,D2-PAK
|
pacote: - |
Estoque3.996 |
|
MOSFET (Metal Oxide) | 100 V | 40A | 4.5V, 10V | 2.5V @ 250µA | 40 nC @ 10 V | 2100 pF @ 50 V | ±20V | - | 125W (Tj) | 56mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
TRENCH >=100V
|
pacote: - |
Estoque25.734 |
|
MOSFET (Metal Oxide) | 120 V | 24A (Ta), 237A (Tc) | 10V | 4V @ 270µA | 198 nC @ 10 V | 13000 pF @ 60 V | ±20V | - | 3.8W (Ta), 375W (Tc) | 3mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
||
Infineon Technologies |
MOSFET_(20V 40V)
|
pacote: - |
Estoque2.925 |
|
MOSFET (Metal Oxide) | 40 V | 175A | 10V | - | 107 nC @ 10 V | - | - | - | - | - | -55°C ~ 175°C | Surface Mount | PG-TDSON-8-43 | 8-PowerTDFN |