Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N CH 200V 3.7A 8-SO
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque7.040 |
|
MOSFET (Metal Oxide) | 200V | 3.7A (Ta) | 10V | 5V @ 100µA | 44nC @ 10V | 1750pF @ 100V | ±20V | - | 2.5W (Ta) | 78 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 4.5A TO252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque26.760 |
|
MOSFET (Metal Oxide) | 150V | 4.5A (Ta), 28A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 40nC @ 10V | 2150pF @ 75V | ±20V | - | 2.5W (Ta), 115W (Tc) | 46 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 24V 30A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.400 |
|
MOSFET (Metal Oxide) | 24V | 30A (Ta) | 4.5V, 10V | 3V @ 250µA | 20nC @ 4.5V | 1000pF @ 20V | ±20V | - | 75W (Tj) | 14.5 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 49A TO-247
|
pacote: TO-247-3 |
Estoque7.136 |
|
MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 4V @ 250µA | 75nC @ 20V | 1060pF @ 25V | ±20V | - | 128W (Tc) | 24 mOhm @ 49A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 42A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.080 |
|
MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 4V @ 250µA | 89nC @ 10V | 2950pF @ 25V | ±20V | - | 140W (Tc) | 5.5 mOhm @ 42A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque512.436 |
|
MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | ±20V | - | 91W (Tc) | 11 mOhm @ 37A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 29A TO247
|
pacote: TO-247-3 |
Estoque3.520 |
|
MOSFET (Metal Oxide) | 500V | 29A (Tc) | 10V | 3.9V @ 250µA | 26.6nC @ 10V | 1312pF @ 100V | ±30V | - | 357W (Tc) | 150 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Texas Instruments |
30V N CH MOSFET
|
pacote: 3-XFDFN |
Estoque3.328 |
|
MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 1.7V @ 250µA | 5.1nC @ 10V | 380pF @ 15V | ±20V | - | 500mW (Ta) | 27 mOhm @ 900mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
Infineon Technologies |
MOSFET N-CH 600V 12A TO247-3
|
pacote: TO-247-3 |
Estoque7.632 |
|
MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 4.5V @ 370µA | 22nC @ 10V | 1010pF @ 100V | ±20V | - | 93W (Tc) | 330 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
IXYS |
MOSFET N-CH 650V 14A TO-220
|
pacote: TO-220-3 |
Estoque6.944 |
|
MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 5.5V @ 250µA | 54nC @ 10V | 2206pF @ 25V | ±30V | - | 78W (Tc) | 135 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 75A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque33.702 |
|
MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 4V @ 1mA | 43.1nC @ 10V | 2920pF @ 25V | ±20V | - | 137W (Tc) | 8.3 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 78A 8-DFN
|
pacote: 8-PowerSMD, Flat Leads |
Estoque24.102 |
|
MOSFET (Metal Oxide) | 80V | 24A (Ta), 78A (Tc) | 6V, 10V | 3.3V @ 250µA | 40nC @ 10V | 2162pF @ 40V | ±20V | - | 7.4W (Ta), 78W (Tc) | 7.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Diodes Incorporated |
MOSFET N-CH 60V 150MA SOT23-3
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque1.033.908 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 5V, 10V | 2.5V @ 1mA | - | 60pF @ 25V | ±30V | - | 330mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
PCH 4V DRIVE SERIES
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
T6 40V N-CH SL IN LFPAK33
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 18A (Ta), 71A (Tc) | 10V | 3.5V @ 40µA | 16 nC @ 10 V | 1000 pF @ 25 V | ±20V | - | 3.1W (Ta), 50W (Tc) | 5.6mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
||
Infineon Technologies |
1200V COOLSIC MOSFET PG-TO247-3
|
pacote: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | 1060 pF @ 800 V | +23V, -7V | - | 150W (Tc) | 78mOhm @ 13A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
||
Goford Semiconductor |
N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4
|
pacote: - |
Estoque14.970 |
|
MOSFET (Metal Oxide) | 30 V | 48A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 38 nC @ 10 V | 1784 pF @ 15 V | ±20V | - | 45W (Tc) | 4mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3.15x3.05) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 20A/78A TDSON
|
pacote: - |
Estoque54.540 |
|
MOSFET (Metal Oxide) | 30 V | 20A (Ta), 78A (Tc) | 4.5V, 10V | 2V @ 250µA | 17 nC @ 10 V | 1100 pF @ 15 V | ±20V | - | 2.5W (Ta), 37W (Tc) | 3.7mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI10
|
pacote: - |
Estoque4.500 |
|
MOSFET (Metal Oxide) | 100 V | 250A (Tc) | 10V | 4V @ 250µA | 147 nC @ 10 V | 9871 pF @ 50 V | ±20V | - | 6W (Ta), 250W (Tc) | 2mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI1012-8 | 8-PowerSFN |
||
onsemi |
MOSFET N-CH 650V 75A TO247-3
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 5V @ 7.5mA | 259 nC @ 10 V | 7690 pF @ 400 V | ±30V | - | 595W (Tc) | 27.4mOhm @ 35A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 4A (Tc) | 10V | 4V @ 250µA | - | 200 pF @ 25 V | ±20V | - | 25W (Tc) | 800mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Panasonic Electronic Components |
MOSFET N-CH 12V 3.4A XLGA004
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 12 V | 3.4A (Ta) | 1.5V, 4.5V | 1V @ 236µA | 5.8 nC @ 4.5 V | 275 pF @ 10 V | ±8V | - | 360mW (Ta) | 30mOhm @ 1.5A, 4.5V | -40°C ~ 85°C (TA) | Surface Mount | XLGA004-W-0808-RA01 | 4-XFLGA, CSP |
||
Good-Ark Semiconductor |
MOSFET, P-CH, SINGLE, -3A, -60V,
|
pacote: - |
Estoque11.412 |
|
MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 15 nC @ 10 V | 1178 pF @ 30 V | ±20V | - | 1.56W (Ta) | 95mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 3.8A THIN-PAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 3.8A (Tc) | 10V | 4.5V @ 40µA | 4.6 nC @ 10 V | 169 pF @ 400 V | ±20V | - | 25W (Tc) | 1.5Ohm @ 700mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-52 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET N-CH 30V 15A PWRDI3333
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 15A (Ta), 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 44 nC @ 10 V | 2370 pF @ 15 V | ±16V | - | 2.5W (Ta), 50W (Tc) | 5.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
||
Alpha & Omega Semiconductor Inc. |
N
|
pacote: - |
Estoque8.700 |
|
MOSFET (Metal Oxide) | 100 V | 23A (Ta), 85A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 66 nC @ 10 V | 3420 pF @ 50 V | ±20V | - | 6.2W (Ta), 113W (Tc) | 5.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Alpha & Omega Semiconductor Inc. |
GAN
|
pacote: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 650 V | 16A | 6V | 2.3V @ 5mA | 6.9 nC @ 6 V | 203 pF @ 400 V | 6V | - | 125W | 90mOhm @ 6A, 6V | -55°C ~ 150°C | Surface Mount | 8-DFN (8x8) | 8-PowerTDFN |
||
Renesas Electronics Corporation |
MOSFET N-CH 30V 8-TSSOP
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8A (Ta) | - | 2.5V @ 1mA | 10 nC @ 10 V | 520 pF @ 10 V | - | - | - | 21mOhm @ 4A, 10V | - | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |