Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 40V 75A TO220AB
|
pacote: TO-220-3 |
Estoque4.656 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 220W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 23A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque18.516 |
|
MOSFET (Metal Oxide) | 30V | 23A (Tc) | 4V, 10V | 1V @ 250µA | 15nC @ 4.5V | 450pF @ 25V | ±16V | - | 45W (Tc) | 45 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 80A TO-263
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque7.312 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 2V @ 150µA | 126nC @ 10V | 4300pF @ 30V | ±20V | - | 214W (Tc) | 6.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT223
|
pacote: TO-261-4, TO-261AA |
Estoque4.176 |
|
MOSFET (Metal Oxide) | 100V | 1.1A (Ta) | 4.5V, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | ±20V | - | 1.79W (Ta) | 700 mOhm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque46.200 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 1V @ 250µA | 17nC @ 5V | - | ±12V | Schottky Diode (Isolated) | 2.5W (Tc) | 25 mOhm @ 7A, 4.5V | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 120A I2PAK-3
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque2.048 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 250µA | 74nC @ 10V | 5270pF @ 50V | ±20V | - | 263W (Tc) | 4.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
NXP |
MOSFET N-CH 100V 61.8A TO220F
|
pacote: TO-220-3 Full Pack, Isolated Tab |
Estoque2.208 |
|
MOSFET (Metal Oxide) | 100V | 61.8A (Tc) | 10V | 4V @ 1mA | 145nC @ 10V | 8061pF @ 50V | ±20V | - | 60W (Tc) | 5.6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack, Isolated Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 8A TO-220
|
pacote: TO-220-3 |
Estoque109.968 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 53nC @ 10V | 1800pF @ 25V | ±30V | - | 134W (Tc) | 800 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 20A IPAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque2.000 |
|
MOSFET (Metal Oxide) | 55V | 20A (Tc) | 10V | 4V @ 250µA | 44nC @ 20V | 680pF @ 25V | ±20V | - | 93W (Tc) | 36 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 150V 33A TO-262
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque3.392 |
|
MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 1750pF @ 50V | ±20V | - | 144W (Tc) | 42 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N CH 75V 87A I-PAK
|
pacote: TO-251-3 Short Leads, IPak, TO-251AA |
Estoque6.928 |
|
MOSFET (Metal Oxide) | 75V | 87A (Tc) | 6V, 10V | 3.7V @ 100µA | 126nC @ 10V | 4430pF @ 25V | ±20V | - | 140W (Tc) | 7.2 mOhm @ 52A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
IXYS |
MOSFET N-CH 200V 96A TO-3P
|
pacote: TO-3P-3, SC-65-3 |
Estoque433.524 |
|
MOSFET (Metal Oxide) | 200V | 96A (Tc) | 10V | 5V @ 250µA | 145nC @ 10V | 4800pF @ 25V | ±20V | - | 600W (Tc) | 24 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Cree/Wolfspeed |
1200V, 75 MOHM, G3 SIC MOSFET
|
pacote: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Estoque2.576 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 30A (Tc) | 15V | 4V @ 5mA | 51nC @ 15V | 1350pF @ 1000V | +19V, -8V | - | 113.6W (Tc) | 90 mOhm @ 20A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
||
STMicroelectronics |
MOSFET N-CH 950V 17.5A TO-220
|
pacote: TO-220-3 |
Estoque2.304 |
|
MOSFET (Metal Oxide) | 950V | 17.5A (Tc) | 10V | 5V @ 100µA | 40nC @ 10V | 1500pF @ 100V | ±30V | - | 250W (Tc) | 330 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
IXYS |
MOSFET N-CH 850V 8A TO263HV
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque7.568 |
|
MOSFET (Metal Oxide) | 850V | 8A (Tc) | 10V | 5.5V @ 250µA | 17nC @ 10V | 654pF @ 25V | ±30V | - | 200W (Tc) | 850 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263HV | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 650V 17.5A TO263
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque12.960 |
|
MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 4.5V @ 730µA | 68nC @ 10V | 1850pF @ 100V | ±20V | - | 151W (Tc) | 190 mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 6.6A TO-220
|
pacote: TO-220-3 |
Estoque103.464 |
|
MOSFET (Metal Oxide) | 200V | 6.6A (Tc) | 10V | 5V @ 250µA | 10nC @ 10V | 400pF @ 25V | ±30V | - | 63W (Tc) | 690 mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Rohm Semiconductor |
MOSFET N-CH 45V 4A TSMT6
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque475.092 |
|
MOSFET (Metal Oxide) | 45V | 4A (Ta) | 4V, 10V | 2.5V @ 1mA | 8.8nC @ 5V | 530pF @ 10V | 21V | - | 600mW (Ta) | 53 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
IXYS |
MOSFET N-CH 1KV 6A TO-247AD
|
pacote: TO-247-3 |
Estoque6.256 |
|
MOSFET (Metal Oxide) | 1000V | 6A (Tc) | 10V | 4.5V @ 2.5mA | 130nC @ 10V | 2600pF @ 25V | ±20V | - | 180W (Tc) | 2 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 500V 29A TO263
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque19.008 |
|
MOSFET (Metal Oxide) | 500V | 29A (Tc) | 10V | 3.9V @ 250µA | 26.6nC @ 10V | 1312pF @ 100V | ±30V | - | 357W (Tc) | 150 mOhm @ 14.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Texas Instruments |
MOSFET N-CH 25V 100A 8VSON
|
pacote: 8-PowerTDFN |
Estoque43.848 |
|
MOSFET (Metal Oxide) | 25V | 100A (Tc) | 4.5V, 10V | 1.7V @ 250µA | 47nC @ 4.5V | 6180pF @ 15V | ±20V | - | 3.2W (Ta), 191W (Tc) | 1.07 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Microchip Technology |
MOSFET P-CH 40V 0.175A TO92-3
|
pacote: TO-226-3, TO-92-3 (TO-226AA) |
Estoque15.216 |
|
MOSFET (Metal Oxide) | 40V | 175mA (Tj) | 4.5V, 10V | 2V @ 1mA | - | 60pF @ 25V | ±20V | - | 740mW (Ta) | 6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Rohm Semiconductor |
MOSFET N-CH 100V 30A LPTS
|
pacote: - |
Estoque3.150 |
|
MOSFET (Metal Oxide) | 100 V | 30A (Ta) | 4V, 10V | 2.5V @ 1mA | 60 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 50W (Ta) | 46mOhm @ 15A, 10V | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 60V 2.8A SOT223-4
|
pacote: - |
Estoque4.914 |
|
MOSFET (Metal Oxide) | 60 V | 2.8A (Ta) | 10V | 4V @ 520µA | 20.2 nC @ 10 V | 790 pF @ 30 V | ±20V | - | 1.8W (Ta), 4.2W (Tc) | 125mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Transphorm |
GANFET N-CH 900V 34A TO247-3
|
pacote: - |
Estoque321 |
|
GaNFET (Cascode Gallium Nitride FET) | 900 V | 34A (Tc) | 10V | 4.4V @ 700µA | 17.5 nC @ 10 V | 980 pF @ 600 V | ±20V | - | 119W (Tc) | 63mOhm @ 22A, 10V | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 |
||
Micro Commercial Co |
MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 340mA | 4.5V, 10V | 2.5V @ 1mA | - | 40 pF @ 10 V | ±20V | - | 200mW | 5Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
MOSLEADER |
N 30V SOT-23
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 60V 45.6A/186A PPAK
|
pacote: - |
Estoque11.253 |
|
MOSFET (Metal Oxide) | 60 V | 45.6A (Ta), 186A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 135 nC @ 10 V | 5900 pF @ 30 V | ±20V | - | 6.25W (Ta), 104W (Tc) | 1.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Vishay Siliconix |
N-CHANNEL 40 V (D-S) 175C MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 65.2A (Ta), 291A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 165 nC @ 10 V | 9100 pF @ 20 V | +20V, -16V | - | 7.5W (Ta), 150W (Tc) | 0.88mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8DC | PowerPAK® SO-8 |
||
Microchip Technology |
MOSFET N-CH 800V 13A D3PAK
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 4V @ 1mA | 225 nC @ 10 V | 3700 pF @ 25 V | - | - | - | 650mOhm @ 500mA, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |