Página 129 - Transistores - FET, MOSFET - Simples | Produtos semicondutores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simples

Registros 42.029
Página  129/1.502
Imagem
Nº de peças
Fabricante
Descrição
pacote
Estoque
Quantidade
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPB60R250CPATMA1
Infineon Technologies

MOSFET N-CH 650V 12A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 440µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque2.368
MOSFET (Metal Oxide)
650V
12A (Tc)
10V
3.5V @ 440µA
35nC @ 10V
1200pF @ 100V
±20V
-
104W (Tc)
250 mOhm @ 7.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3K309T(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.7A TSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 31 mOhm @ 4A, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSM
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque6.336
MOSFET (Metal Oxide)
20V
4.7A (Ta)
1.8V, 4V
-
-
1020pF @ 10V
±12V
-
700mW (Ta)
31 mOhm @ 4A, 4V
150°C (TJ)
Surface Mount
TSM
TO-236-3, SC-59, SOT-23-3
hot AOD421
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 12.5A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 12.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque17.964
MOSFET (Metal Oxide)
20V
12.5A (Ta)
2.5V, 4.5V
1.4V @ 250µA
4.6nC @ 4.5V
620pF @ 10V
±12V
-
2W (Ta), 18.8W (Tc)
75 mOhm @ 12.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6N50TF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 6A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque5.440
MOSFET (Metal Oxide)
500V
6A (Tc)
10V
5V @ 250µA
16.6nC @ 10V
940pF @ 25V
±30V
-
89W (Tc)
900 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
PHB11N06LT,118
NXP

MOSFET N-CH 55V 10.3A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque3.808
MOSFET (Metal Oxide)
55V
10.3A (Tc)
5V, 10V
2V @ 1mA
5.2nC @ 5V
330pF @ 25V
±15V
-
33W (Tc)
130 mOhm @ 5.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot FDD6676AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 90A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-PAK (TO-252AA)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque218.556
MOSFET (Metal Oxide)
30V
90A (Ta)
4.5V, 10V
3V @ 1mA
64nC @ 10V
2500pF @ 15V
±20V
-
70W (Ta)
5.7 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-PAK (TO-252AA)
TO-252-3, DPak (2 Leads + Tab), SC-63
IRFP460P
Vishay Siliconix

MOSFET N-CH 500V 20A TO-247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
pacote: TO-247-3
Estoque4.032
MOSFET (Metal Oxide)
500V
20A (Tc)
-
4V @ 250µA
210nC @ 10V
4200pF @ 25V
-
-
-
270 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRF9640
Vishay Siliconix

MOSFET P-CH 200V 11A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: TO-220-3
Estoque5.664
MOSFET (Metal Oxide)
200V
11A (Tc)
10V
4V @ 250µA
44nC @ 10V
1200pF @ 25V
±20V
-
125W (Tc)
500 mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot STB40NS15T4
STMicroelectronics

MOSFET N-CH 150V 40A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Estoque18.060
MOSFET (Metal Oxide)
150V
40A (Tc)
10V
4V @ 250µA
110nC @ 10V
2420pF @ 25V
±20V
-
300W (Tc)
52 mOhm @ 20A, 10V
-65°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS4965NFT3G
ON Semiconductor

MOSFET N-CH 30V 65A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
pacote: 8-PowerTDFN
Estoque5.888
MOSFET (Metal Oxide)
30V
17.5A (Ta), 65A (Tc)
-
2.3V @ 1mA
30.5nC @ 10V
2100pF @ 15V
-
-
-
3.4 mOhm @ 30A, 10V
-
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
AO4306
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 13A 8SOIC

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
Estoque3.424
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP3068L-13
Diodes Incorporated

MOSFET P-CH 30V 3.9A SOT23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 708pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
pacote: TO-236-3, SC-59, SOT-23-3
Estoque2.224
MOSFET (Metal Oxide)
30V
3.3A (Ta)
1.8V, 10V
1.3V @ 250µA
15.9nC @ 10V
708pF @ 15V
±12V
-
700mW (Ta)
72 mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
IPZ40N04S53R1ATMA1
Infineon Technologies

MOSFET N-CH 8TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.4V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
pacote: 8-PowerTDFN
Estoque3.712
MOSFET (Metal Oxide)
40V
40A (Tc)
7V, 10V
3.4V @ 30µA
41nC @ 10V
2310pF @ 25V
±20V
-
71W (Tc)
3.1 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
hot IPA60R160C6
Infineon Technologies

MOSFET N-CH 600V 23.8A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 11.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-FP
  • Package / Case: TO-220-3 Full Pack
pacote: TO-220-3 Full Pack
Estoque20.928
MOSFET (Metal Oxide)
600V
23.8A (Tc)
10V
3.5V @ 750µA
75nC @ 10V
1660pF @ 100V
±20V
-
34W (Tc)
160 mOhm @ 11.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-FP
TO-220-3 Full Pack
IPB180P04P4L02ATMA1
Infineon Technologies

MOSFET P-CH 40V 180A TO263-7

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 410µA
  • Gate Charge (Qg) (Max) @ Vgs: 286nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18700pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
pacote: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Estoque4.512
MOSFET (Metal Oxide)
40V
180A (Tc)
4.5V, 10V
2.2V @ 410µA
286nC @ 10V
18700pF @ 25V
±16V
-
150W (Tc)
2.4 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
hot FDD8896
Fairchild/ON Semiconductor

MOSFET N-CH 30V 94A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque456.804
MOSFET (Metal Oxide)
30V
17A (Ta), 94A (Tc)
4.5V, 10V
2.5V @ 250µA
60nC @ 10V
2525pF @ 15V
±20V
-
80W (Tc)
5.7 mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
DMPH6050SK3-13
Diodes Incorporated

MOSFET P-CH 60V 7.2A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63
Estoque25.302
MOSFET (Metal Oxide)
60V
7.2A (Ta), 23.6A (Tc)
4.5V, 10V
3V @ 250µA
25nC @ 10V
1377pF @ 30V
±20V
-
1.9W (Ta)
50 mOhm @ 7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
E3M0013120K
Wolfspeed, Inc.

SIC, MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
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RFD7N10LE
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
  • Vgs (Max): +10V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 7A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
pacote: -
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MOSFET (Metal Oxide)
100 V
7A (Tc)
5V
2V @ 250µA
150 nC @ 10 V
360 pF @ 25 V
+10V, -8V
-
47W (Tc)
300mOhm @ 7A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
MCB200N06YA-TP
Micro Commercial Co

N-CHANNEL MOSFET, D2-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 200A
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260W (Tj)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
pacote: -
Estoque2.310
MOSFET (Metal Oxide)
60 V
200A
6V, 10V
3.8V @ 250µA
65 nC @ 10 V
4165 pF @ 25 V
±20V
-
260W (Tj)
3.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IRF620PBF-BE3
Vishay Siliconix

MOSFET N-CH 200V 5.2A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
pacote: -
Estoque7.962
MOSFET (Metal Oxide)
200 V
5.2A (Tc)
-
4V @ 250µA
14 nC @ 10 V
260 pF @ 25 V
±20V
-
50W (Tc)
800mOhm @ 3.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
VN10LPSTZ
Diodes Incorporated

MOSFET VMOS N-CHAN TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: E-Line (TO-92 compatible)
  • Package / Case: E-Line-3, Formed Leads
pacote: -
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MOSFET (Metal Oxide)
60 V
270mA (Ta)
5V, 10V
2.5V @ 1mA
-
60 pF @ 25 V
±20V
-
625mW (Ta)
5Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
E-Line (TO-92 compatible)
E-Line-3, Formed Leads
GSFU65R400
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 11.00A, 65

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque3.000
MOSFET (Metal Oxide)
650 V
11A (Tc)
10V
4V @ 250µA
30 nC @ 10 V
925 pF @ 100 V
±30V
-
31W (Tc)
400mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
2SK1093-E
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
pacote: -
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MSC040SMA120J
Microchip Technology

SICFET N-CH 1200V 53A SOT227

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227 (ISOTOP®)
  • Package / Case: SOT-227-4, miniBLOC
pacote: -
Estoque30
SiCFET (Silicon Carbide)
1200 V
53A (Tc)
20V
2.8V @ 1mA
137 nC @ 20 V
1990 pF @ 1000 V
+25V, -10V
-
208W (Tc)
50mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227 (ISOTOP®)
SOT-227-4, miniBLOC
DMP2042UCP4-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DSN1010-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
  • Vgs (Max): -6V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X1-DSN1010-4 (Type C)
  • Package / Case: 4-XFBGA
pacote: -
Estoque8.880
MOSFET (Metal Oxide)
20 V
3.4A (Ta)
2.5V, 4.5V
1.2V @ 250µA
2.5 nC @ 4.5 V
218 pF @ 10 V
-6V
-
860mW (Ta)
48mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X1-DSN1010-4 (Type C)
4-XFBGA
R6524KNXC7G
Rohm Semiconductor

650V 24A TO-220FM, HIGH-SPEED SW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
pacote: -
Estoque2.970
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
5V @ 750µA
45 nC @ 10 V
1850 pF @ 25 V
±20V
-
74W (Tc)
185mOhm @ 11.3A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
IPD65R950CFDATMA2
Infineon Technologies

MOSFET N-CH 650V 3.9A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 36.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
pacote: -
Estoque7.500
MOSFET (Metal Oxide)
650 V
3.9A (Tc)
10V
4.5V @ 200µA
14.1 nC @ 10 V
380 pF @ 100 V
±20V
-
36.7W (Tc)
950mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63