Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET NCH 600V 10.6A TO252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.944 |
|
MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 3.5V @ 300µA | 32nC @ 10V | 700pF @ 100V | ±20V | Super Junction | 83W (Tc) | 380 mOhm @ 3.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 30V 30A DPAK
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque11.052 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2V @ 25µA | 19nC @ 5V | 695pF @ 25V | ±20V | - | 42W (Tc) | 20 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 650V 1.8A TO-220AB
|
pacote: TO-220-3 |
Estoque2.912 |
|
MOSFET (Metal Oxide) | 650V | 1.8A (Tc) | 10V | 3.9V @ 80µA | 12.5nC @ 10V | 200pF @ 25V | ±20V | - | 25W (Tc) | 3 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 25V 30A TO-220AB
|
pacote: TO-220-3 |
Estoque60.000 |
|
MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 2V @ 20µA | 8.3nC @ 5V | 1043pF @ 15V | ±20V | - | 46W (Tc) | 13.9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
NXP |
MOSFET N-CH 25V 75A TO220AB
|
pacote: TO-220-3 |
Estoque3.904 |
|
MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 13nC @ 5V | 1074pF @ 25V | ±20V | - | 93W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 75A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque13.920 |
|
MOSFET (Metal Oxide) | 30V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 172nC @ 10V | 7000pF @ 15V | ±20V | - | 215W (Tc) | 3.2 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 10A 8SOIC
|
pacote: 8-SOIC (0.154", 3.90mm Width) |
Estoque982.152 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 3V @ 250µA | 31nC @ 10V | 1340pF @ 15V | ±20V | - | 2.5W (Ta) | 13.5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque5.488 |
|
MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 4V @ 200µA | 270nC @ 10V | 21900pF @ 25V | ±20V | - | 250W (Tc) | 2.4 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH TO252-3
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque4.240 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 4V @ 260µA | 24nC @ 10V | 1080pF @ 400V | ±20V | - | 68W (Tc) | 180 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Microsemi Corporation |
POWER MOSFET - SIC
|
pacote: SOT-227-4, miniBLOC |
Estoque6.880 |
|
SiCFET (Silicon Carbide) | 1200V | 51A (Tc) | 20V | 2.5V @ 1mA | 235nC @ 20V | - | +25V, -10V | - | 273W (Tc) | 55 mOhm @ 40A, 20V | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
ON Semiconductor |
MOSFET N-CH 30V 12A SO8FL
|
pacote: 8-PowerTDFN |
Estoque6.016 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET P-CH 30V 1.6A 6-TSOP
|
pacote: SOT-23-6 Thin, TSOT-23-6 |
Estoque1.540.224 |
|
MOSFET (Metal Oxide) | 30V | 1.6A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 3.6nC @ 5V | - | ±20V | Schottky Diode (Isolated) | 830mW (Ta) | 200 mOhm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
STMicroelectronics |
MOSFET N-CH 650V 28A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque3.552 |
|
MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 5V @ 250µA | 62.5nC @ 10V | 2700pF @ 100V | ±25V | - | 190W (Tc) | 110 mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET PCH 40V 14A TO252
|
pacote: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Estoque26.130 |
|
MOSFET (Metal Oxide) | 40V | 14A (Ta), 45A (Tc) | - | 2.5V @ 250µA | 91nC @ 10V | 4234pF @ 20V | - | - | 1.7W (Ta) | 11 mOhm @ 9.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-4L | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
pacote: - |
Estoque9.396 |
|
MOSFET (Metal Oxide) | 30 V | 15A (Ta), 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | 1323 pF @ 25 V | ±20V | - | 2W (Ta), 31W (Tc) | 6mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
|
pacote: - |
Estoque150 |
|
MOSFET (Metal Oxide) | 800 V | 9.5A (Ta) | 10V | 4V @ 450µA | 19 nC @ 10 V | 1150 pF @ 300 V | ±20V | - | 130W (Tc) | 550mOhm @ 4.8A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 60A TO220SM
|
pacote: - |
Estoque5.250 |
|
MOSFET (Metal Oxide) | 100 V | 60A (Ta) | 6V, 10V | 3.5V @ 500µA | 60 nC @ 10 V | 4320 pF @ 10 V | ±20V | - | 205W (Tc) | 6.11mOhm @ 30A, 10V | 175°C | Surface Mount | TO-220SM(W) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 100V 47A 8PQFN
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 9.2A (Ta), 45A (Tc) | 6V, 10V | 4V @ 78µA | 13 nC @ 10 V | 965 pF @ 50 V | ±20V | - | 2.7W (Ta), 62W (Tc) | 14.4mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Micro Commercial Co |
MOSFET P-CH 20V 2.8A SOT23
|
pacote: - |
Estoque8.370 |
|
MOSFET (Metal Oxide) | 20 V | 2.8A (Tj) | 2.5V, 4.5V | 900mV @ 250µA | 14.5 nC @ 4.5 V | 880 pF @ 6 V | ±8V | - | 1.25W | 120mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
IXYS |
MOSFET N-CH 100V 180A TO263
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4V @ 250µA | 185 nC @ 10 V | 10500 pF @ 25 V | ±20V | - | 480W (Tc) | 6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
NCH 30MA 15V MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
MOSFET N-CH 40V 50A TO252
|
pacote: - |
Estoque7.434 |
|
MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 31 nC @ 10 V | 22800 pF @ 20 V | ±20V | - | 35W (Tc) | 4.9mOhm @ 50A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 650V 20A TO247
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 5V @ 250µA | 35.5 nC @ 10 V | 1480 pF @ 100 V | ±25V | - | 170W (Tc) | 190mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 40V 167A PPAK SO-8
|
pacote: - |
Estoque12.600 |
|
MOSFET (Metal Oxide) | 40 V | 167A (Tc) | 10V | 3.5V @ 250µA | 45 nC @ 10 V | 2650 pF @ 25 V | ±20V | - | 191W (Tc) | 3.6mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Diodes Incorporated |
MOSFET BVDSS: 101V~250V TO220AB
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 46A (Tc) | 10V | 4V @ 250µA | 25 nC @ 10 V | 1600 pF @ 75 V | ±20V | - | 2.2W (Ta) | 35mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 500MA TO92
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 500mA (Tc) | 10V | 4.5V @ 250µA | 6.1 nC @ 10 V | 138 pF @ 25 V | ±30V | - | 2.5W (Tc) | 10Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET P-CH 60V 18.7A TO220-3
|
pacote: - |
Estoque1.821 |
|
MOSFET (Metal Oxide) | 60 V | 18.7A (Ta) | 10V | 4V @ 1mA | 28 nC @ 10 V | 860 pF @ 25 V | ±20V | - | 81.1W (Ta) | 130mOhm @ 13.2A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |