Imagem |
Nº de peças |
Fabricante |
Descrição |
pacote |
Estoque |
Quantidade |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 650V TO-220AB
|
pacote: TO-220-3 |
Estoque6.864 |
|
MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 3.9V @ 350µA | 27nC @ 10V | 790pF @ 25V | ±20V | - | 83W (Tc) | 600 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
NXP |
MOSFET N-CH 20V 5.8A SOT23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque148.080 |
|
MOSFET (Metal Oxide) | 20V | 5.8A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 670pF @ 10V | ±8V | - | 510mW (Ta) | 18 mOhm @ 5.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8
|
pacote: PowerPAK? SO-8 |
Estoque301.284 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 1.5V @ 250µA | 60nC @ 4.5V | 6450pF @ 15V | ±12V | - | 1.9W (Ta) | 4 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
Microsemi Corporation |
MOSFET N-CH 1200V 60A SP6
|
pacote: SP6 |
Estoque5.504 |
|
MOSFET (Metal Oxide) | 1200V | 60A | 10V | 5V @ 10mA | 748nC @ 10V | 20600pF @ 25V | ±30V | - | 1250W (Tc) | 175 mOhm @ 30A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
||
IXYS |
MOSFET N-CH 85V 70A TO-220
|
pacote: TO-220-3 |
Estoque3.728 |
|
MOSFET (Metal Oxide) | 85V | 70A (Tc) | 10V | 4V @ 50µA | 59nC @ 10V | 2570pF @ 25V | ±20V | - | 176W (Tc) | 13.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 100V 500MA SOT223
|
pacote: TO-261-4, TO-261AA |
Estoque121.056 |
|
MOSFET (Metal Oxide) | 100V | 500mA (Ta) | 10V | 2.4V @ 1mA | - | 75pF @ 25V | ±20V | - | 2W (Ta) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 4VSON
|
pacote: 4-PowerTSFN |
Estoque6.240 |
|
MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | ±20V | - | 75W (Tc) | 195 mOhm @ 2.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Infineon Technologies |
MOSFET P-CH 30V 80A TO262-3
|
pacote: TO-262-3 Long Leads, I2Pak, TO-262AA |
Estoque4.032 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 253µA | 160nC @ 10V | 11300pF @ 25V | +5V, -16V | - | 137W (Tc) | 4.4 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
ON Semiconductor |
MOSFET N-CH 60V 36A SO8FL
|
pacote: 8-PowerTDFN |
Estoque6.880 |
|
MOSFET (Metal Oxide) | 60V | 36A (Ta), 235A (Tc) | 4.5V, 10V | 2V @ 250µA | 91nC @ 10V | 6660pF @ 25V | ±20V | - | 3.8W (Ta), 167W (Tc) | 1.5 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
ON Semiconductor |
MOSFET N-CH 100V 100A TO220
|
pacote: TO-220-3 |
Estoque2.192 |
|
MOSFET (Metal Oxide) | 100V | 100A (Ta) | 10V, 15V | 4V @ 1mA | 35nC @ 10V | 2950pF @ 50V | ±20V | - | 2.1W (Ta), 110W (Tc) | 7.2 mOhm @ 50A, 15V | 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, SUPER
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque6.672 |
|
MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 4V @ 250µA | 31nC @ 10V | 1273pF @ 100V | ±30V | - | 150.6W (Tc) | 190 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Micro Commercial Co |
P-CHANNEL MOSFET, SOT-23 PACKAGE
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque3.168 |
|
MOSFET (Metal Oxide) | 20V | 2.9A | 4.5V | 900mV @ 250µA | 13nC @ 4.5V | 715pF @ 6V | ±12V | - | 350mW | 110 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK
|
pacote: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Estoque13.608 |
|
MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 4.5V @ 250µA | 23nC @ 10V | 510pF @ 25V | ±30V | - | 74W (Tc) | 2.2 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Diodes Incorporated |
MOSFET P-CH 40V 20A TO252
|
pacote: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Estoque6.432 |
|
MOSFET (Metal Oxide) | 40V | 20A (Tc) | 4.5V, 10V | 3V @ 250µA | 23.2nC @ 10V | 1328pF @ 20V | ±20V | - | 1.6W (Ta) | 45 mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET P-CH 30V 0.1A SMCP
|
pacote: SC-81 |
Estoque1.849.620 |
|
MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 1.5V, 4V | - | 1.43nC @ 10V | 7.5pF @ 10V | ±10V | - | 150mW (Ta) | 10.4 Ohm @ 50mA, 4V | 150°C (TJ) | Surface Mount | 3-SSFP | SC-81 |
||
Central Semiconductor Corp |
MOSFET N-CH 60V 0.115A SOT-23
|
pacote: TO-236-3, SC-59, SOT-23-3 |
Estoque29.400 |
|
MOSFET (Metal Oxide) | 60V | 115mA (Tc) | 5V, 10V | 2.5V @ 250µA | - | 50pF @ 25V | 40V | - | 350mW (Ta) | 7.5 Ohm @ 500mA, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 5A SOT-223-4
|
pacote: TO-261-4, TO-261AA |
Estoque1.386.900 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 2.8V @ 250µA | 30nC @ 10V | 690pF @ 15V | ±20V | - | 3W (Ta) | 65 mOhm @ 5A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 6.4A TO220AB
|
pacote: - |
Estoque3.075 |
|
MOSFET (Metal Oxide) | 600 V | 6.4A (Tc) | 10V | 5V @ 250µA | 12 nC @ 10 V | 347 pF @ 100 V | ±30V | - | 62.5W (Tc) | 700mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 40V 22A/30A 8DFN
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 22A (Ta), 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | 1480 pF @ 20 V | ±20V | - | 5W (Ta), 27W (Tc) | 6.1mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerVDFN |
||
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 3V @ 250µA | 26 nC @ 10 V | 1590 pF @ 15 V | ±20V | - | 2.5W (Ta), 50W (Tc) | 7mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (5x6) | 8-PowerWDFN |
||
Infineon Technologies |
AUTOMOTIVE_COOLMOS
|
pacote: - |
Estoque1.470 |
|
MOSFET (Metal Oxide) | 650 V | 29A (Tc) | 10V | 4.5V @ 480µA | 39 nC @ 10 V | 1942 pF @ 400 V | ±20V | - | 186W (Tc) | 99mOhm @ 9.7A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-22-1 | 22-PowerBSOP Module |
||
Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 4.9A (Tc) | 10V | 4V @ 250µA | 20 nC @ 10 V | 550 pF @ 25 V | ±30V | - | 2.5W (Ta), 32W (Tc) | 600mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 35A/80A 8HSOP
|
pacote: - |
Estoque7.500 |
|
MOSFET (Metal Oxide) | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 68 nC @ 10 V | 4060 pF @ 15 V | ±20V | - | 3W (Ta) | 1.7mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
Comchip Technology |
MOSFET N-CH 30V 25A 8DFN
|
pacote: - |
Estoque8.970 |
|
MOSFET (Metal Oxide) | 30 V | 25A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 8 nC @ 4.5 V | 500 pF @ 25 V | ±20V | - | 21W (Tc) | 18mOhm @ 12A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH TO262-3
|
pacote: - |
Request a Quote |
|
- | - | 80A (Tc) | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
T6 30V LL 2X2 WDFNW6
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 10A (Ta), 35A (Tc) | 4.5V, 10V | 2V @ 250µA | 10 nC @ 10 V | 600 pF @ 15 V | ±20V | - | 2.4W (Ta), 27W (Tc) | 13mOhm @ 8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 6-WDFNW (2.05x2.05) | 6-PowerWDFN |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
pacote: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET N-CH 115V 3.4A 6DFN
|
pacote: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 115 V | 3.4A (Ta) | 3V, 10V | 2.2V @ 250µA | 6 nC @ 10 V | 251 pF @ 50 V | ±12V | - | 900mW (Ta) | 90mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | X2-DFN2020-6 | 6-PowerXDFN |